BRPI0908989A2 - Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo - Google Patents

Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo

Info

Publication number
BRPI0908989A2
BRPI0908989A2 BRPI0908989-6A BRPI0908989A BRPI0908989A2 BR PI0908989 A2 BRPI0908989 A2 BR PI0908989A2 BR PI0908989 A BRPI0908989 A BR PI0908989A BR PI0908989 A2 BRPI0908989 A2 BR PI0908989A2
Authority
BR
Brazil
Prior art keywords
synthetic
self
physical
field effect
mixed material
Prior art date
Application number
BRPI0908989-6A
Other languages
English (en)
Inventor
Rodrigo Ferrão De Paiva Martins
Elvira Maria Correia Fortunato
Original Assignee
Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa filed Critical Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa
Publication of BRPI0908989A2 publication Critical patent/BRPI0908989A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Paper (AREA)
  • Materials For Medical Uses (AREA)
  • Fireproofing Substances (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
BRPI0908989-6A 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo BRPI0908989A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PT103998A PT103998B (pt) 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
PCT/IB2009/000565 WO2009130551A1 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dieléctrico em dispositivos electrónicos e opto electrónicos auto sustentáveis de efeito de campo

Publications (1)

Publication Number Publication Date
BRPI0908989A2 true BRPI0908989A2 (pt) 2015-08-04

Family

ID=40792978

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0908989-6A BRPI0908989A2 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo

Country Status (12)

Country Link
US (1) US20110024842A1 (pt)
EP (1) EP2272114A1 (pt)
JP (1) JP5734177B2 (pt)
KR (1) KR101553089B1 (pt)
CN (1) CN102047461A (pt)
AU (1) AU2009239685B2 (pt)
BR (1) BRPI0908989A2 (pt)
CA (1) CA2718919C (pt)
MX (1) MX2010010225A (pt)
PT (1) PT103998B (pt)
RU (1) RU2495516C2 (pt)
WO (1) WO2009130551A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT104482A (pt) 2009-04-01 2010-10-01 Univ Nova De Lisboa Método de fabrico e criação de transístores de filme fino electrocrómicos de estrutura lateral ou vertical utilizando substratos vitrocerâmicos, poliméricos, metálicos ou de papel celulósico natural, sintético ou misto funcionalizados ou não funciona
US8769836B2 (en) 2010-06-22 2014-07-08 Nike, Inc. Article of footwear with color change portion and method of changing color
US9301569B2 (en) 2010-06-22 2016-04-05 Nike, Inc. Article of footwear with color change portion and method of changing color
US8474146B2 (en) 2010-06-22 2013-07-02 Nike, Inc. Article of footwear with color change portion and method of changing color
EP3080585B1 (en) 2013-12-10 2023-12-06 Illumina, Inc. Biosensors for biological or chemical analysis and methods of manufacturing the same
US10741477B2 (en) * 2018-03-23 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
JP2024518041A (ja) * 2021-02-26 2024-04-24 リキッド ワイヤ エルエルシー 変形導電性材料パターンが形成された回路アセンブリを製造および使用するための装置、システム、および方法

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US4328133A (en) * 1980-06-25 1982-05-04 Bridgestone Tire Company Limited Organic micro-fiber reinforced rubber compositions
JPH0643679B2 (ja) * 1986-04-26 1994-06-08 ハリマ化成株式会社 層間強度の優れる抄き合わせ紙の製造方法
US20030192664A1 (en) * 1995-01-30 2003-10-16 Kulick Russell J. Use of vinylamine polymers with ionic, organic, cross-linked polymeric microbeads in paper-making
US6780480B2 (en) * 1995-12-28 2004-08-24 Latentier Laminated package having metalized paper
JPH11158797A (ja) * 1997-09-29 1999-06-15 Toppan Printing Co Ltd 印刷物
US6514384B1 (en) * 1999-03-19 2003-02-04 Weyerhaeuser Company Method for increasing filler retention of cellulosic fiber sheets
MXPA02003795A (es) * 1999-10-15 2002-12-13 Cargill Inc Fibras procedentes de semillas de plantas y su uso.
SE520339C2 (sv) * 2001-03-07 2003-06-24 Acreo Ab Elektrokemisk transistoranordning och dess tillverkningsförfarande
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
FR2826153B1 (fr) * 2001-06-14 2004-05-28 A S K Procede de connexion d'une puce a une antenne d'un dispositif d'identification par radio-frequence du type carte a puce sans contact
KR100452558B1 (ko) * 2001-11-20 2004-10-14 주식회사 엘지화학 공중합성 이온 단량체를 함유하는 종이 코팅용 라텍스
US20030122120A1 (en) * 2001-12-28 2003-07-03 Motorola, Inc. Organic semiconductor device and method
US6661024B1 (en) * 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
US6905908B2 (en) * 2002-12-26 2005-06-14 Motorola, Inc. Method of fabricating organic field effect transistors
ITTO20030145A1 (it) * 2003-02-28 2004-09-01 Infm Istituto Naz Per La Fisi Ca Della Mater Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.
CA2541246A1 (en) * 2003-10-01 2005-04-14 Board Of Regents The University Of Texas System Compositions, methods and systems for making and using electronic paper
JP4356420B2 (ja) * 2003-10-20 2009-11-04 ソニー株式会社 電界効果型トランジスタ及びその製造方法
KR100615237B1 (ko) * 2004-08-07 2006-08-25 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법
JP2006186294A (ja) * 2004-12-03 2006-07-13 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
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US20080054258A1 (en) * 2006-08-11 2008-03-06 Basf Aktiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors

Also Published As

Publication number Publication date
EP2272114A1 (en) 2011-01-12
CN102047461A (zh) 2011-05-04
CA2718919A1 (en) 2009-10-29
WO2009130551A1 (pt) 2009-10-29
RU2010142240A (ru) 2012-04-27
JP2011517503A (ja) 2011-06-09
RU2495516C2 (ru) 2013-10-10
AU2009239685B2 (en) 2014-07-17
KR20110013355A (ko) 2011-02-09
CA2718919C (en) 2017-07-11
JP5734177B2 (ja) 2015-06-10
PT103998B (pt) 2011-03-10
AU2009239685A1 (en) 2009-10-29
MX2010010225A (es) 2011-03-02
WO2009130551A8 (pt) 2010-12-29
PT103998A (pt) 2009-09-21
US20110024842A1 (en) 2011-02-03
KR101553089B1 (ko) 2015-09-30

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B12B Appeal against refusal [chapter 12.2 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 13A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2662 DE 11-01-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.