PL429066A1 - Hydrotermalny sposób wytwarzania warstwy CuO na podłożu - Google Patents

Hydrotermalny sposób wytwarzania warstwy CuO na podłożu

Info

Publication number
PL429066A1
PL429066A1 PL429066A PL42906619A PL429066A1 PL 429066 A1 PL429066 A1 PL 429066A1 PL 429066 A PL429066 A PL 429066A PL 42906619 A PL42906619 A PL 42906619A PL 429066 A1 PL429066 A1 PL 429066A1
Authority
PL
Poland
Prior art keywords
substrate
layer
producing
hydrothermal method
cuo layer
Prior art date
Application number
PL429066A
Other languages
English (en)
Other versions
PL241026B1 (pl
Inventor
Bartłomiej WITKOWSKI
Marek GODLEWSKi
Monika Ożga
Original Assignee
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL429066A priority Critical patent/PL241026B1/pl
Priority to EP20461511.6A priority patent/EP3703108A1/en
Publication of PL429066A1 publication Critical patent/PL429066A1/pl
Publication of PL241026B1 publication Critical patent/PL241026B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials

Landscapes

  • Other Surface Treatments For Metallic Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Przedmiotem wynalazku jest hydrotermalny sposób wytwarzania warstwy CuO na podłożu. W sposobie tym warstwę CuO wytwarza się w dwóch etapach. W pierwszym etapie na podłożu, korzystnie półprzewodnikowym lub szklanym wytwarza się warstwę metalu zarodkującą wzrost. W drugim etapie, podłoże z osadzoną warstwą zarodkującą wzrost umieszcza się w roztworze soli o wartości pH od 6,5 do 9, przy czym roztwór ten zawiera rozpuszczalnik, co najmniej jeden prekursor tlenu, i co najmniej jeden prekursor miedzi. Następnie temperaturę mieszaniny reakcyjnej podnosi się do temperatury 60 - 100°C, i przez co najmniej 1 sekundę prowadzi się wzrost warstwy CuO.
PL429066A 2019-02-26 2019-02-26 Hydrotermalny sposób wytwarzania warstwy CuO na podłożu PL241026B1 (pl)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PL429066A PL241026B1 (pl) 2019-02-26 2019-02-26 Hydrotermalny sposób wytwarzania warstwy CuO na podłożu
EP20461511.6A EP3703108A1 (en) 2019-02-26 2020-02-25 Hydrothermal method of producing a cuo layer on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL429066A PL241026B1 (pl) 2019-02-26 2019-02-26 Hydrotermalny sposób wytwarzania warstwy CuO na podłożu

Publications (2)

Publication Number Publication Date
PL429066A1 true PL429066A1 (pl) 2020-09-07
PL241026B1 PL241026B1 (pl) 2022-07-18

Family

ID=70333902

Family Applications (1)

Application Number Title Priority Date Filing Date
PL429066A PL241026B1 (pl) 2019-02-26 2019-02-26 Hydrotermalny sposób wytwarzania warstwy CuO na podłożu

Country Status (2)

Country Link
EP (1) EP3703108A1 (pl)
PL (1) PL241026B1 (pl)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL225326B1 (pl) * 2012-02-06 2017-03-31 Inst Fizyki Polskiej Akademii Nauk Hydrotermalny sposób wytwarzania nanosłupków ZnO na podłożach półprzewodnikowych
US20160005599A1 (en) * 2013-02-18 2016-01-07 Postech Academy-Industry Foundation Method for forming aligned oxide semiconductor wire pattern and electronic device using same

Also Published As

Publication number Publication date
EP3703108A1 (en) 2020-09-02
PL241026B1 (pl) 2022-07-18

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