PL4148809T3 - Ogniwo słoneczne, sposób jego wytwarzania i moduł ogniwa słonecznego - Google Patents
Ogniwo słoneczne, sposób jego wytwarzania i moduł ogniwa słonecznegoInfo
- Publication number
- PL4148809T3 PL4148809T3 PL21202789.0T PL21202789T PL4148809T3 PL 4148809 T3 PL4148809 T3 PL 4148809T3 PL 21202789 T PL21202789 T PL 21202789T PL 4148809 T3 PL4148809 T3 PL 4148809T3
- Authority
- PL
- Poland
- Prior art keywords
- solar cell
- production
- cell module
- module
- solar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
- H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111064317.8A CN115188834B (zh) | 2021-09-10 | 2021-09-10 | 太阳能电池及其制备方法、光伏组件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL4148809T3 true PL4148809T3 (pl) | 2024-01-03 |
Family
ID=78212020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL21202789.0T PL4148809T3 (pl) | 2021-09-10 | 2021-10-15 | Ogniwo słoneczne, sposób jego wytwarzania i moduł ogniwa słonecznego |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11784266B2 (pl) |
| EP (2) | EP4148809B1 (pl) |
| JP (2) | JP7170817B1 (pl) |
| CN (2) | CN115188834B (pl) |
| AU (2) | AU2021250916B1 (pl) |
| ES (1) | ES2961141T3 (pl) |
| PL (1) | PL4148809T3 (pl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117153899A (zh) | 2023-09-22 | 2023-12-01 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
| CN118448490B (zh) * | 2024-04-28 | 2025-10-21 | 隆基绿能科技股份有限公司 | 一种太阳能电池及其制备方法和光伏组件 |
| CN118156323B (zh) * | 2024-05-11 | 2024-08-20 | 金阳(泉州)新能源科技有限公司 | 一种联合钝化背接触电池及其制作方法和光伏组件 |
| CN119789603A (zh) * | 2024-12-19 | 2025-04-08 | 天合光能股份有限公司 | 太阳能电池及其制备方法 |
| CN120358848A (zh) * | 2025-06-20 | 2025-07-22 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
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| JPS57184918A (en) | 1981-05-08 | 1982-11-13 | Natl Aerospace Lab | Measurement of fine displacement |
| JPH05129277A (ja) | 1991-10-31 | 1993-05-25 | Iwasaki Electric Co Ltd | 多層反射防止膜 |
| JPH07235684A (ja) | 1994-02-23 | 1995-09-05 | Hitachi Cable Ltd | 太陽電池 |
| JP2005277181A (ja) | 2004-03-25 | 2005-10-06 | Sharp Corp | 半導体装置の製造方法 |
| US20100032012A1 (en) | 2006-12-01 | 2010-02-11 | Takayuki Isaka | Solar cell and method of manufacturing the same |
| JP5124189B2 (ja) | 2007-07-11 | 2013-01-23 | シャープ株式会社 | 光電変換素子の製造方法 |
| FR2928461B1 (fr) * | 2008-03-10 | 2011-04-01 | Saint Gobain | Substrat transparent comportant un revetement antireflet |
| KR101072204B1 (ko) * | 2009-03-31 | 2011-10-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| BR112013006364A2 (pt) | 2010-09-16 | 2016-06-28 | Specmat Inc | método, processo, e tecnologia de fabricação de células solares de silício cristalino de alta eficiência e baixo custo |
| CN102403369A (zh) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | 一种用于太阳能电池的钝化介质膜 |
| KR101918737B1 (ko) | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
| CN109599450A (zh) * | 2013-04-03 | 2019-04-09 | Lg电子株式会社 | 太阳能电池 |
| JP5735093B1 (ja) | 2013-12-24 | 2015-06-17 | 株式会社マテリアル・コンセプト | 太陽電池及びその製造方法 |
| KR102298674B1 (ko) * | 2014-01-28 | 2021-09-03 | 엘지전자 주식회사 | 태양 전지 모듈 및 이를 포함하는 태양광 발전 장치 |
| CN104393059A (zh) | 2014-11-21 | 2015-03-04 | 广西智通节能环保科技有限公司 | 一种太阳能电池 |
| EP3041055A3 (en) | 2014-12-31 | 2016-11-09 | LG Electronics Inc. | Solar cell module and method for manufacturing the same |
| TWI539613B (zh) | 2015-07-16 | 2016-06-21 | 有成精密股份有限公司 | 高功率太陽能電池模組 |
| WO2017158691A1 (ja) | 2016-03-14 | 2017-09-21 | 三菱電機株式会社 | 太陽電池の製造方法 |
| KR102581702B1 (ko) | 2016-10-25 | 2023-09-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고광전변환효율 태양전지 및 고광전변환효율 태양전지의 제조방법 |
| CN106876490B (zh) * | 2017-02-24 | 2018-09-11 | 天合光能股份有限公司 | 高转化效率抗pid的n型晶体硅双面电池及其制备方法 |
| CN107256894B (zh) | 2017-05-18 | 2018-08-10 | 广东爱旭科技股份有限公司 | 管式perc单面太阳能电池及其制备方法和专用设备 |
| JP2019129274A (ja) | 2018-01-26 | 2019-08-01 | セイコーエプソン株式会社 | 光電変換素子、光電変換モジュールおよび電子機器 |
| CN108441837B (zh) * | 2018-06-13 | 2024-04-16 | 天津南玻节能玻璃有限公司 | 一种减反射镀膜结构 |
| US11444212B2 (en) * | 2018-06-22 | 2022-09-13 | Jingao Solar Co., Ltd. | Crystalline silicon solar cell and preparation method therefor, and photovoltaic module |
| DE102018123397A1 (de) | 2018-09-24 | 2020-03-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer photovoltaischen Solarzelle mit einem Heteroübergang und einem eindiffundiertem Emitterbereich |
| CN109786476B (zh) * | 2018-12-27 | 2021-05-28 | 中国科学院宁波材料技术与工程研究所 | 一种钝化接触结构及其在硅太阳电池中应用 |
| CN110061072A (zh) * | 2019-04-08 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | 一种tbc太阳能电池结构及其制备方法 |
| KR102735357B1 (ko) | 2019-04-25 | 2024-11-28 | 진가오 솔라 컴퍼니 리미티드 | 태양 전지 및 그 제조 방법 |
| CN111916523A (zh) | 2019-05-07 | 2020-11-10 | 君泰创新（北京）科技有限公司 | 异质结太阳能电池及其组件、制备方法 |
| CN110112243A (zh) | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | 太阳能电池的背面钝化结构及其制备方法 |
| CN210778613U (zh) | 2019-07-02 | 2020-06-16 | 天津爱旭太阳能科技有限公司 | 一种太阳能电池多层减反射渐变膜 |
| CN210200741U (zh) | 2019-08-09 | 2020-03-27 | 江苏晶旺新能源科技有限公司 | 一种具有三层膜结构的p型perc电池结构 |
| CN110739367A (zh) * | 2019-10-23 | 2020-01-31 | 泰州中来光电科技有限公司 | 一种N型TOPCon太阳能电池制备方法 |
| CN111668318B (zh) | 2020-05-29 | 2021-09-24 | 晶科绿能(上海)管理有限公司 | 一种光伏组件、太阳能电池及其制备方法 |
| CN111599898A (zh) * | 2020-06-19 | 2020-08-28 | 通威太阳能(眉山)有限公司 | 制造晶硅太阳能电池片的方法以及晶硅太阳能电池片 |
| CN212625596U (zh) * | 2020-07-30 | 2021-02-26 | 嘉兴阿特斯光伏技术有限公司 | 太阳能电池 |
| CN111952414B (zh) * | 2020-08-21 | 2023-02-28 | 晶科绿能(上海)管理有限公司 | 硅基半导体器件的切割后钝化方法和硅基半导体器件 |
| CN112259615A (zh) | 2020-09-24 | 2021-01-22 | 华南理工大学 | 一种空间用GaAs太阳电池叠层减反射膜及其制备方法与应用 |
| CN112289873B (zh) | 2020-10-30 | 2022-05-20 | 浙江晶科能源有限公司 | 太阳能电池 |
| CN112331742B (zh) * | 2020-11-10 | 2024-11-08 | 帝尔激光科技(无锡)有限公司 | 一种选择性发射极钝化接触太阳电池及其制备方法 |
| CN112531035B (zh) | 2020-12-03 | 2022-04-29 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法、太阳电池背面多层复合钝化膜 |
| CN112768534A (zh) * | 2020-12-31 | 2021-05-07 | 江苏润阳世纪光伏科技有限公司 | 一种氧化硅钝化perc双面电池及其制备方法 |
| CN116314356A (zh) * | 2021-02-23 | 2023-06-23 | 浙江晶科能源有限公司 | 太阳能电池及其制作方法、太阳能组件 |
| CN113097346A (zh) * | 2021-04-20 | 2021-07-09 | 山西潞安太阳能科技有限责任公司 | 一种适用于硅电池背面叠层膜钝化结构 |
-
2021
- 2021-09-10 CN CN202111064317.8A patent/CN115188834B/zh active Active
- 2021-09-10 CN CN202310899147.8A patent/CN116705865A/zh not_active Withdrawn
- 2021-10-14 AU AU2021250916A patent/AU2021250916B1/en active Active
- 2021-10-15 EP EP21202789.0A patent/EP4148809B1/en active Active
- 2021-10-15 ES ES21202789T patent/ES2961141T3/es active Active
- 2021-10-15 EP EP23186067.7A patent/EP4254518B1/en active Active
- 2021-10-15 PL PL21202789.0T patent/PL4148809T3/pl unknown
- 2021-10-18 US US17/504,498 patent/US11784266B2/en active Active
- 2021-10-19 JP JP2021171256A patent/JP7170817B1/ja active Active
-
2022
- 2022-11-01 JP JP2022175706A patent/JP7431303B2/ja active Active
- 2022-12-22 AU AU2022291584A patent/AU2022291584B2/en active Active
-
2023
- 2023-08-11 US US18/448,847 patent/US12364024B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| AU2022291584B2 (en) | 2024-02-01 |
| CN116705865A (zh) | 2023-09-05 |
| EP4254518A3 (en) | 2023-10-18 |
| ES2961141T3 (es) | 2024-03-08 |
| US20230078580A1 (en) | 2023-03-16 |
| EP4148809B1 (en) | 2023-09-20 |
| US12364024B2 (en) | 2025-07-15 |
| JP7431303B2 (ja) | 2024-02-14 |
| JP2023040981A (ja) | 2023-03-23 |
| US11784266B2 (en) | 2023-10-10 |
| EP4254518B1 (en) | 2024-12-18 |
| EP4148809A1 (en) | 2023-03-15 |
| JP2023041057A (ja) | 2023-03-23 |
| AU2022291584A1 (en) | 2023-02-02 |
| EP4254518A2 (en) | 2023-10-04 |
| US20230420589A1 (en) | 2023-12-28 |
| CN115188834B (zh) | 2023-09-22 |
| CN115188834A (zh) | 2022-10-14 |
| JP7170817B1 (ja) | 2022-11-14 |
| AU2021250916B1 (en) | 2022-12-15 |
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