PL414739A1 - Dioda laserowa na bazie stopu AllnGaN - Google Patents

Dioda laserowa na bazie stopu AllnGaN

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Publication number
PL414739A1
PL414739A1 PL414739A PL41473915A PL414739A1 PL 414739 A1 PL414739 A1 PL 414739A1 PL 414739 A PL414739 A PL 414739A PL 41473915 A PL41473915 A PL 41473915A PL 414739 A1 PL414739 A1 PL 414739A1
Authority
PL
Poland
Prior art keywords
cover layer
electrical conductivity
laser diode
based laser
fiber
Prior art date
Application number
PL414739A
Other languages
English (en)
Other versions
PL228535B1 (pl
Inventor
Szymon Stańczyk
Anna Kafar
Robert Czernecki
Tadeusz Suski
Piotr Perlin
Szymon Grzanka
Original Assignee
Inst Wysokich Ciśnień Polskiej Akademii Nauk
Topgan Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Wysokich Ciśnień Polskiej Akademii Nauk, Topgan Spółka Z Ograniczoną Odpowiedzialnością filed Critical Inst Wysokich Ciśnień Polskiej Akademii Nauk
Priority to PL414739A priority Critical patent/PL228535B1/pl
Priority to US15/774,695 priority patent/US10439362B2/en
Priority to PCT/PL2016/050053 priority patent/WO2017082746A1/en
Priority to EP16810102.0A priority patent/EP3375056B8/en
Publication of PL414739A1 publication Critical patent/PL414739A1/pl
Publication of PL228535B1 publication Critical patent/PL228535B1/pl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0211—Substrates made of ternary or quaternary compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Przedmiotem wynalazku jest dioda laserowa na bazie stopu AllnGaN, zawierająca podłoże (1) z azotku galu, dolną warstwę okładkową (2) o przewodnictwie elektrycznym typu n, dolną warstwę światłowodowo-okładkową (3) o przewodnictwie elektrycznym typu n, warstwę emitującą światło (5), górną warstwę światłowodowo-okładkową (7) o przewodnictwie elektrycznym typu p, górną warstwę okładkową (8) o przewodnictwie elektrycznym typu p oraz warstwę podkontaktową (9) o przewodnictwie elektrycznym typu p, w której dolna warstwa światłowodowo-okładkowa (3) oraz górna warstwa światłowodowo-okładkowa (7) posiadają ciągłą, nieskokową i łagodną zmianę zawartości indu i/lub glinu.
PL414739A 2015-11-10 2015-11-10 Dioda laserowa na bazie stopu AllnGaN PL228535B1 (pl)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PL414739A PL228535B1 (pl) 2015-11-10 2015-11-10 Dioda laserowa na bazie stopu AllnGaN
US15/774,695 US10439362B2 (en) 2015-11-10 2016-11-10 AlInGaN alloy based laser diode
PCT/PL2016/050053 WO2017082746A1 (en) 2015-11-10 2016-11-10 Alingan alloy based laser diode
EP16810102.0A EP3375056B8 (en) 2015-11-10 2016-11-10 Allngan alloy based laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL414739A PL228535B1 (pl) 2015-11-10 2015-11-10 Dioda laserowa na bazie stopu AllnGaN

Publications (2)

Publication Number Publication Date
PL414739A1 true PL414739A1 (pl) 2017-05-22
PL228535B1 PL228535B1 (pl) 2018-04-30

Family

ID=57543122

Family Applications (1)

Application Number Title Priority Date Filing Date
PL414739A PL228535B1 (pl) 2015-11-10 2015-11-10 Dioda laserowa na bazie stopu AllnGaN

Country Status (4)

Country Link
US (1) US10439362B2 (pl)
EP (1) EP3375056B8 (pl)
PL (1) PL228535B1 (pl)
WO (1) WO2017082746A1 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL438136A1 (pl) * 2021-06-13 2022-12-19 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Epitaksjalna struktura laserowa i sposób wytwarzania epitaksjalnej struktury laserowej
PL439657A1 (pl) * 2021-11-26 2023-05-29 Topgan Spółka Z Ograniczoną Odpowiedzialnością Układ lasera i światłowodu oraz sposób jego wytwarzania

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916708A (en) * 1989-06-26 1990-04-10 Eastman Kodak Company Semiconductor light-emitting devices
US5173912A (en) 1991-04-02 1992-12-22 The Furukawa Electric Co., Ltd. Double-carrier confinement laser diode with quantum well active and sch structures
US6555403B1 (en) * 1997-07-30 2003-04-29 Fujitsu Limited Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
US6586762B2 (en) 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
ATE419666T1 (de) 2001-03-28 2009-01-15 Nichia Corp Nitrid-halbleiterelement
WO2005050748A1 (ja) * 2003-11-19 2005-06-02 Nichia Corporation 半導体素子及びその製造方法
US8144743B2 (en) * 2008-03-05 2012-03-27 Rohm Co., Ltd. Nitride based semiconductor device and fabrication method for the same
US9042416B1 (en) 2013-03-06 2015-05-26 Corning Incorporated High-power low-loss GRINSCH laser

Also Published As

Publication number Publication date
WO2017082746A1 (en) 2017-05-18
US10439362B2 (en) 2019-10-08
EP3375056B1 (en) 2021-07-14
EP3375056A1 (en) 2018-09-19
US20180331501A1 (en) 2018-11-15
PL228535B1 (pl) 2018-04-30
EP3375056B8 (en) 2021-08-18

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