PL439657A1 - Układ lasera i światłowodu oraz sposób jego wytwarzania - Google Patents

Układ lasera i światłowodu oraz sposób jego wytwarzania

Info

Publication number
PL439657A1
PL439657A1 PL439657A PL43965721A PL439657A1 PL 439657 A1 PL439657 A1 PL 439657A1 PL 439657 A PL439657 A PL 439657A PL 43965721 A PL43965721 A PL 43965721A PL 439657 A1 PL439657 A1 PL 439657A1
Authority
PL
Poland
Prior art keywords
optical fiber
laser
layer
sup
gallium nitride
Prior art date
Application number
PL439657A
Other languages
English (en)
Other versions
PL246920B1 (pl
Inventor
Anna KAFAR
Kiran SABA
Krzysztof GIBASIEWICZ
Szymon STAŃCZYK
Stephen Najda
Piotr Perlin
Original Assignee
Topgan Spółka Z Ograniczoną Odpowiedzialnością
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topgan Spółka Z Ograniczoną Odpowiedzialnością, Instytut Wysokich Ciśnień Polskiej Akademii Nauk filed Critical Topgan Spółka Z Ograniczoną Odpowiedzialnością
Priority to PL439657A priority Critical patent/PL246920B1/pl
Priority to PCT/PL2022/050085 priority patent/WO2023096514A1/en
Priority to US18/712,575 priority patent/US20250055262A1/en
Priority to EP22829938.4A priority patent/EP4437627A1/en
Publication of PL439657A1 publication Critical patent/PL439657A1/pl
Publication of PL246920B1 publication Critical patent/PL246920B1/pl

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • A—HUMAN NECESSITIES
    • A45—HAND OR TRAVELLING ARTICLES
    • A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
    • A45D33/00—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances
    • A45D33/26—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances combined with other objects
    • A45D33/32—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances combined with other objects with illuminating means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

Przedmiotem zgłoszenia przedstawionym na rysunku jest sposób wytwarzania układu lasera i światłowodu obejmujący etapy: wytwarza się podłoże z azotku galu, po czym na podłożu z azotku galu definiuje się obszary o zwiększonej dezorientacji względem otoczenia, nanosi się dolną warstwę okładkową, nanosi się dolną warstwę światłowodu, nanosi się warstwę emitującą światło, nanosi się górną niedomieszkowaną warstwę światłowodu, nanosi się warstwę blokującą elektrony, nanosi się górną warstwę światłowodu, nanosi się górną warstwę okładkową, nanosi się warstwę podkontaktową, wytwarza się strukturę przestrzenną światłowodu o kształcie grzbietu, wytwarza się szczelinę separującą laser i światłowód tworzącą jedno ze zwierciadeł lasera, przy czym światłowód wytwarza się z tych samych warstw co strukturę lasera, zaś studnie kwantowe w obszarze światłowodu, posiadają co najmniej o 3,5% molowych mniej indu w porównaniu z obszarem lasera, zaś absorpcja optyczna światła lasera w światłowodzie jest mniejsza niż 12 cm<sup>-1</sup>. Kolejnym przedmiotem zgłoszenia jest układ lasera i światłowodu.
PL439657A 2021-11-26 2021-11-26 Układ lasera i światłowodu oraz sposób jego wytwarzania PL246920B1 (pl)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PL439657A PL246920B1 (pl) 2021-11-26 2021-11-26 Układ lasera i światłowodu oraz sposób jego wytwarzania
PCT/PL2022/050085 WO2023096514A1 (en) 2021-11-26 2022-11-28 Laser and light guide system and manufacturing method thereof
US18/712,575 US20250055262A1 (en) 2021-11-26 2022-11-28 Laser and light guide system and manufacturing method thereof
EP22829938.4A EP4437627A1 (en) 2021-11-26 2022-11-28 Laser and light guide system and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL439657A PL246920B1 (pl) 2021-11-26 2021-11-26 Układ lasera i światłowodu oraz sposób jego wytwarzania

Publications (2)

Publication Number Publication Date
PL439657A1 true PL439657A1 (pl) 2023-05-29
PL246920B1 PL246920B1 (pl) 2025-03-31

Family

ID=84602679

Family Applications (1)

Application Number Title Priority Date Filing Date
PL439657A PL246920B1 (pl) 2021-11-26 2021-11-26 Układ lasera i światłowodu oraz sposób jego wytwarzania

Country Status (4)

Country Link
US (1) US20250055262A1 (pl)
EP (1) EP4437627A1 (pl)
PL (1) PL246920B1 (pl)
WO (1) WO2023096514A1 (pl)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297644A (en) 1979-11-23 1981-10-27 Rca Corporation Amplifier with cross-over current control
PL224995B1 (pl) 2010-04-06 2017-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Podłoże do wzrostu epitaksjalnego
FR3007589B1 (fr) 2013-06-24 2015-07-24 St Microelectronics Crolles 2 Circuit integre photonique et procede de fabrication
PL228006B1 (pl) * 2015-09-23 2018-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Dioda superluminescencyjna na bazie stopu AlInGaN
PL228535B1 (pl) * 2015-11-10 2018-04-30 Inst Wysokich Cisnien Polskiej Akademii Nauk Dioda laserowa na bazie stopu AllnGaN
US10026723B2 (en) 2016-01-04 2018-07-17 Infinera Corporation Photonic integrated circuit package

Also Published As

Publication number Publication date
PL246920B1 (pl) 2025-03-31
US20250055262A1 (en) 2025-02-13
EP4437627A1 (en) 2024-10-02
WO2023096514A1 (en) 2023-06-01

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