PL439657A1 - Układ lasera i światłowodu oraz sposób jego wytwarzania - Google Patents
Układ lasera i światłowodu oraz sposób jego wytwarzaniaInfo
- Publication number
- PL439657A1 PL439657A1 PL439657A PL43965721A PL439657A1 PL 439657 A1 PL439657 A1 PL 439657A1 PL 439657 A PL439657 A PL 439657A PL 43965721 A PL43965721 A PL 43965721A PL 439657 A1 PL439657 A1 PL 439657A1
- Authority
- PL
- Poland
- Prior art keywords
- optical fiber
- laser
- layer
- sup
- gallium nitride
- Prior art date
Links
- 239000013307 optical fiber Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- A—HUMAN NECESSITIES
- A45—HAND OR TRAVELLING ARTICLES
- A45D—HAIRDRESSING OR SHAVING EQUIPMENT; EQUIPMENT FOR COSMETICS OR COSMETIC TREATMENTS, e.g. FOR MANICURING OR PEDICURING
- A45D33/00—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances
- A45D33/26—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances combined with other objects
- A45D33/32—Containers or accessories specially adapted for handling powdery toiletry or cosmetic substances combined with other objects with illuminating means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
Przedmiotem zgłoszenia przedstawionym na rysunku jest sposób wytwarzania układu lasera i światłowodu obejmujący etapy: wytwarza się podłoże z azotku galu, po czym na podłożu z azotku galu definiuje się obszary o zwiększonej dezorientacji względem otoczenia, nanosi się dolną warstwę okładkową, nanosi się dolną warstwę światłowodu, nanosi się warstwę emitującą światło, nanosi się górną niedomieszkowaną warstwę światłowodu, nanosi się warstwę blokującą elektrony, nanosi się górną warstwę światłowodu, nanosi się górną warstwę okładkową, nanosi się warstwę podkontaktową, wytwarza się strukturę przestrzenną światłowodu o kształcie grzbietu, wytwarza się szczelinę separującą laser i światłowód tworzącą jedno ze zwierciadeł lasera, przy czym światłowód wytwarza się z tych samych warstw co strukturę lasera, zaś studnie kwantowe w obszarze światłowodu, posiadają co najmniej o 3,5% molowych mniej indu w porównaniu z obszarem lasera, zaś absorpcja optyczna światła lasera w światłowodzie jest mniejsza niż 12 cm<sup>-1</sup>. Kolejnym przedmiotem zgłoszenia jest układ lasera i światłowodu.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL439657A PL439657A1 (pl) | 2021-11-26 | 2021-11-26 | Układ lasera i światłowodu oraz sposób jego wytwarzania |
| PCT/PL2022/050085 WO2023096514A1 (en) | 2021-11-26 | 2022-11-28 | Laser and light guide system and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL439657A PL439657A1 (pl) | 2021-11-26 | 2021-11-26 | Układ lasera i światłowodu oraz sposób jego wytwarzania |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL439657A1 true PL439657A1 (pl) | 2023-05-29 |
Family
ID=84602679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL439657A PL439657A1 (pl) | 2021-11-26 | 2021-11-26 | Układ lasera i światłowodu oraz sposób jego wytwarzania |
Country Status (2)
| Country | Link |
|---|---|
| PL (1) | PL439657A1 (pl) |
| WO (1) | WO2023096514A1 (pl) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4297644A (en) | 1979-11-23 | 1981-10-27 | Rca Corporation | Amplifier with cross-over current control |
| PL224995B1 (pl) | 2010-04-06 | 2017-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Podłoże do wzrostu epitaksjalnego |
| FR3007589B1 (fr) | 2013-06-24 | 2015-07-24 | St Microelectronics Crolles 2 | Circuit integre photonique et procede de fabrication |
| PL228006B1 (pl) * | 2015-09-23 | 2018-02-28 | Inst Wysokich Ciśnień Polskiej Akademii Nauk | Dioda superluminescencyjna na bazie stopu AlInGaN |
| PL228535B1 (pl) * | 2015-11-10 | 2018-04-30 | Inst Wysokich Cisnien Polskiej Akademii Nauk | Dioda laserowa na bazie stopu AllnGaN |
| EP3400486B1 (en) | 2016-01-04 | 2023-06-07 | Infinera Corporation | Photonic integrated circuit package |
-
2021
- 2021-11-26 PL PL439657A patent/PL439657A1/pl unknown
-
2022
- 2022-11-28 WO PCT/PL2022/050085 patent/WO2023096514A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023096514A1 (en) | 2023-06-01 |
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