PL3468699T3 - Sposób wytwarzania membran z porowatego grafenu - Google Patents

Sposób wytwarzania membran z porowatego grafenu

Info

Publication number
PL3468699T3
PL3468699T3 PL17728229.0T PL17728229T PL3468699T3 PL 3468699 T3 PL3468699 T3 PL 3468699T3 PL 17728229 T PL17728229 T PL 17728229T PL 3468699 T3 PL3468699 T3 PL 3468699T3
Authority
PL
Poland
Prior art keywords
porous graphene
making porous
graphene membranes
membranes
making
Prior art date
Application number
PL17728229.0T
Other languages
English (en)
Inventor
Murray Height
Hyung Gyu Park
Kyoungjun Choi
Original Assignee
Eth Zurich
Heiq Materials Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eth Zurich, Heiq Materials Ag filed Critical Eth Zurich
Publication of PL3468699T3 publication Critical patent/PL3468699T3/pl

Links

Classifications

    • A—HUMAN NECESSITIES
    • A41—WEARING APPAREL
    • A41D—OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES
    • A41D31/00—Materials specially adapted for outerwear
    • A41D31/04—Materials specially adapted for outerwear characterised by special function or use
    • A41D31/10—Impermeable to liquids, e.g. waterproof; Liquid-repellent
    • A41D31/102—Waterproof and breathable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0053—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes
    • B01D67/006—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods
    • B01D67/0062—Inorganic membrane manufacture by inducing porosity into non porous precursor membranes by elimination of segments of the precursor, e.g. nucleation-track membranes, lithography or laser methods by micromachining techniques, e.g. using masking and etching steps, photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • B01D67/0039—Inorganic membrane manufacture
    • B01D67/0072—Inorganic membrane manufacture by deposition from the gaseous phase, e.g. sputtering, CVD, PVD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/10—Supported membranes; Membrane supports
    • B01D69/107—Organic support material
    • B01D69/1071—Woven, non-woven or net mesh
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/10—Supported membranes; Membrane supports
    • B01D69/108—Inorganic support material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/021—Carbon
    • B01D71/0211—Graphene or derivates thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/022—Metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
    • B01D71/02—Inorganic material
    • B01D71/024—Oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2323/00—Details relating to membrane preparation
    • B01D2323/64—Use of a temporary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2325/00—Details relating to properties of membranes
    • B01D2325/04—Characteristic thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/02—Cellular or porous
    • B32B2305/026—Porous
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/726—Permeability to liquids, absorption
    • B32B2307/7265—Non-permeable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2437/00—Clothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/04—Specific amount of layers or specific thickness
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/16—Pore diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Textile Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Laminated Bodies (AREA)
PL17728229.0T 2016-06-10 2017-06-09 Sposób wytwarzania membran z porowatego grafenu PL3468699T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16174017.0A EP3254750A1 (en) 2016-06-10 2016-06-10 Method for making porous graphene membranes and membranes produced using the method
PCT/EP2017/064156 WO2017212039A1 (en) 2016-06-10 2017-06-09 Method for making porous graphene membranes and membranes produced using the method

Publications (1)

Publication Number Publication Date
PL3468699T3 true PL3468699T3 (pl) 2025-12-01

Family

ID=56131380

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17728229.0T PL3468699T3 (pl) 2016-06-10 2017-06-09 Sposób wytwarzania membran z porowatego grafenu

Country Status (10)

Country Link
US (1) US11518142B2 (pl)
EP (2) EP3254750A1 (pl)
JP (1) JP7131774B2 (pl)
KR (1) KR102396120B1 (pl)
CN (1) CN109310954B (pl)
AU (1) AU2017276780B2 (pl)
CA (1) CA3026791C (pl)
PL (1) PL3468699T3 (pl)
RU (1) RU2745631C2 (pl)
WO (1) WO2017212039A1 (pl)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018111433A1 (en) * 2016-11-04 2018-06-21 Massachusetts Institute Of Technology Formation of pores in atomically thin layers
US20180330842A1 (en) * 2017-05-15 2018-11-15 The Trustees Of Columbia University In The City Of New York Layered metal-graphene-metal laminate structure
WO2019127335A1 (zh) * 2017-12-29 2019-07-04 广东工业大学 一种氧化石墨烯过滤膜制造方法
CN108033440B (zh) * 2018-01-16 2021-07-13 上海理工大学 一种高比表面积多孔褶皱石墨烯的制备方法
WO2020045695A1 (ko) * 2018-08-28 2020-03-05 한국에너지기술연구원 나노 기공을 갖는 초박막 그래핀 멤브레인 제조 방법
KR102141512B1 (ko) * 2018-09-11 2020-08-05 재단법인 나노기반소프트일렉트로닉스연구단 화학기상증착법을 이용한 다층 그래핀 및 그의 제조방법
EP3931150A4 (en) * 2019-03-01 2022-12-07 Commonwealth Scientific and Industrial Research Organisation VERTICAL BRANCHING GRAPH
CN110125385A (zh) * 2019-04-15 2019-08-16 中国航发北京航空材料研究院 一种基于原位合成的石墨烯铜基复合材料的制备方法
CN112121847B (zh) * 2019-06-25 2024-01-05 高化学株式会社 一种二甲醚羰基化制备乙酸甲酯用催化剂及其制备和应用
CN110627051B (zh) * 2019-10-17 2021-06-15 武汉大学 具有均匀孔洞的石墨烯膜及其制备方法
US20230047835A1 (en) 2019-11-28 2023-02-16 Eth Zurich Method for making porous filter membranes
AU2020405679A1 (en) * 2019-12-19 2022-06-23 Heiq Materials Ag Method for making porous graphene membranes and membranes produced using the method
WO2021133159A1 (en) * 2019-12-24 2021-07-01 Mimos Berhad A method of forming graphene nanomesh
JP7596637B2 (ja) * 2020-02-27 2024-12-10 Ｔｏｐｐａｎホールディングス株式会社 ペリクル膜及びペリクル
CN111847432B (zh) * 2020-07-24 2023-08-29 北京石墨烯研究院 大面积多层石墨烯及其制备方法
CN112408377B (zh) * 2020-12-01 2021-12-28 江苏星途新材料科技有限公司 一种多孔的改性氧化石墨烯膜及其制备方法
CN112622357A (zh) * 2020-12-02 2021-04-09 成都飞机工业（集团）有限责任公司 多层多孔高导电性能的石墨烯薄膜及其制造方法
US20240106010A1 (en) 2021-03-04 2024-03-28 Heiq Materials Ag Artificial Solid-Electrolyte Interphase Layer Material and Uses Thereof
KR102565154B1 (ko) * 2021-04-08 2023-08-09 주식회사 유디 고순도 그래핀 플레이크의 친환경 양산 제조방법
CN113213461A (zh) * 2021-05-24 2021-08-06 崔云 一种晶形石墨烯及其制备方法和应用
CN114247305B (zh) * 2021-12-21 2023-06-20 郑州大学 一种二维纳米岛@石墨烯异质结自组装疏水纳滤膜及其制备方法
CN114931866B (zh) * 2022-03-15 2023-04-14 电子科技大学 一种多孔高分子聚合材料过滤膜的制备方法
CN116103929B (zh) * 2023-03-27 2025-04-01 高梵(浙江)信息技术有限公司 一种不含碳氟化合物的疏水性羽绒的制备工艺
US20240376593A1 (en) * 2023-05-12 2024-11-14 Ostia Technologies Limited Nanoporous graphene membrane
WO2024238505A1 (en) * 2023-05-12 2024-11-21 Massachusetts Institute Of Technology Systems and methods for cascaded compression of the size distribution of zero-dimensional nanostructures
WO2025073545A1 (en) 2023-10-05 2025-04-10 Heiq Materials Ag Method for making and/or delaminating porous graphene membranes and membranes produced using the method
CN117776167B (zh) * 2023-12-27 2025-10-31 重庆市生态环境监测中心 一种用于二氧化碳传感的多孔石墨烯材料的制备方法及其产品和应用
WO2025252793A1 (en) 2024-06-07 2025-12-11 Heiq Materials Ag Method for making porous grahene and for post-processing and/or functionalization thereof and graphene obtained using such methods
CN119400691A (zh) * 2024-10-30 2025-02-07 北京科技大学 一种制备石墨烯器件的方法及其应用

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5665766B2 (ja) * 2009-11-26 2015-02-04 株式会社ブリヂストン 空気入りタイヤ
KR101325575B1 (ko) 2010-12-28 2013-11-05 성균관대학교산학협력단 다공성 나노구조를 갖는 그래핀막의 제조방법
US20120241069A1 (en) * 2011-03-22 2012-09-27 Massachusetts Institute Of Technology Direct Synthesis of Patterned Graphene by Deposition
KR101813170B1 (ko) 2011-04-11 2017-12-28 삼성전자주식회사 그래핀 함유 분리막
KR101668691B1 (ko) * 2011-08-25 2016-10-24 위스콘신 얼럼나이 리서어치 화운데이션 마이크로구조화 및 나노구조화된 그래핀 및 그래파이트의 배리어 유도형 성장 방법
CN103215469B (zh) * 2012-01-19 2015-08-19 中国科学院上海硅酸盐研究所 多孔石墨烯、石墨烯/多孔金属复合材料以及它们的制备方法
CN102583337A (zh) 2012-01-20 2012-07-18 中国科学院上海硅酸盐研究所 多孔结构石墨烯材料的制备方法
US8979978B2 (en) * 2012-01-26 2015-03-17 Empire Technology Development Llc Graphene membrane with regular angstrom-scale pores
CN103241728B (zh) 2012-02-14 2016-01-20 中国科学院上海微系统与信息技术研究所 利用多孔阳极氧化铝为模板化学气相沉积制备石墨烯纳米孔阵列的方法
US20150273401A1 (en) 2012-11-30 2015-10-01 Empire Technology Development Llc Selective membrane supported on nanoporous graphene
WO2014084860A1 (en) 2012-11-30 2014-06-05 Empire Technology Development, Llc Graphene membrane laminated to porous woven or nonwoven support
TWI456083B (zh) 2013-04-09 2014-10-11 Univ Nat Sun Yat Sen 以化學氣相沉積程序於多孔洞基材形成大面積石墨烯層之方法
KR102232418B1 (ko) 2014-04-29 2021-03-29 엘지전자 주식회사 그래핀 멤브레인 및 그 제조 방법
US10748672B2 (en) * 2014-07-17 2020-08-18 Global Graphene Group, Inc. Highly conductive graphene foams and process for producing same
CN104261403B (zh) 2014-10-27 2016-05-04 福州大学 一种三维多孔结构石墨烯的制备方法
US9945027B2 (en) * 2015-11-20 2018-04-17 Fourté International, Sdn. Bhd. High conductivity graphene-metal composite and methods of manufacture
CN105647159B (zh) 2016-01-04 2018-08-21 杭州师范大学 一种石墨烯带修饰的聚合物基泡沫材料及其制备方法与应用
CN105603384B (zh) * 2016-01-26 2019-01-18 无锡格菲电子薄膜科技有限公司 一种cvd沉积石墨烯膜的规模化生产方法

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