PL109105B1 - Homogenous matrix structure cell - Google Patents

Homogenous matrix structure cell Download PDF

Info

Publication number
PL109105B1
PL109105B1 PL20013977A PL20013977A PL109105B1 PL 109105 B1 PL109105 B1 PL 109105B1 PL 20013977 A PL20013977 A PL 20013977A PL 20013977 A PL20013977 A PL 20013977A PL 109105 B1 PL109105 B1 PL 109105B1
Authority
PL
Poland
Prior art keywords
information
cell
inputs
links
logical
Prior art date
Application number
PL20013977A
Other languages
English (en)
Polish (pl)
Other versions
PL200139A1 (pl
Inventor
Valerij F Gusev
Gennadij N Ivanov
Genrich I Krengel
Vjaceslav J Kremlev
Mansur Z Sagivaleev
Jurij I Scetianin
Azat U Jarmuchametov
Original Assignee
Gusev Valery
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gusev Valery filed Critical Gusev Valery
Publication of PL200139A1 publication Critical patent/PL200139A1/xx
Publication of PL109105B1 publication Critical patent/PL109105B1/pl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Multi Processors (AREA)
PL20013977A 1976-08-17 1977-08-09 Homogenous matrix structure cell PL109105B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762398612A SU624295A1 (ru) 1976-08-17 1976-08-17 Ячейка пам ти дл матричной однородной структуры

Publications (2)

Publication Number Publication Date
PL200139A1 PL200139A1 (pl) 1978-04-24
PL109105B1 true PL109105B1 (en) 1980-05-31

Family

ID=20674913

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20013977A PL109105B1 (en) 1976-08-17 1977-08-09 Homogenous matrix structure cell

Country Status (10)

Country Link
JP (1) JPS5341139A (enExample)
BG (1) BG30596A1 (enExample)
DD (1) DD132688A1 (enExample)
DE (1) DE2736061C2 (enExample)
FR (1) FR2362471A1 (enExample)
GB (1) GB1545338A (enExample)
IN (1) IN147561B (enExample)
PL (1) PL109105B1 (enExample)
RO (1) RO73483A (enExample)
SU (1) SU624295A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60226090A (ja) * 1984-04-25 1985-11-11 Nec Corp スタテイツクランダムアクセスメモリ回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638204A (en) * 1969-12-19 1972-01-25 Ibm Semiconductive cell for a storage having a plurality of simultaneously accessible locations
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array

Also Published As

Publication number Publication date
IN147561B (enExample) 1980-04-12
BG30596A1 (en) 1981-07-15
DE2736061C2 (de) 1982-05-06
DE2736061A1 (de) 1978-02-23
SU624295A1 (ru) 1978-09-15
FR2362471B1 (enExample) 1980-07-11
JPS5341139A (en) 1978-04-14
DD132688A1 (de) 1978-10-18
FR2362471A1 (fr) 1978-03-17
PL200139A1 (pl) 1978-04-24
RO73483A (ro) 1981-11-04
GB1545338A (en) 1979-05-10

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