PH12022550475B1 - Method of manufacturing cured film, photocurable resin composition, method of manufacturing laminate, and method of manufacturing semiconductor device - Google Patents

Method of manufacturing cured film, photocurable resin composition, method of manufacturing laminate, and method of manufacturing semiconductor device

Info

Publication number
PH12022550475B1
PH12022550475B1 PH1/2022/550475A PH12022550475A PH12022550475B1 PH 12022550475 B1 PH12022550475 B1 PH 12022550475B1 PH 12022550475 A PH12022550475 A PH 12022550475A PH 12022550475 B1 PH12022550475 B1 PH 12022550475B1
Authority
PH
Philippines
Prior art keywords
manufacturing
cured film
resin composition
photocurable resin
semiconductor device
Prior art date
Application number
PH1/2022/550475A
Other languages
English (en)
Other versions
PH12022550475A1 (en
Inventor
Yuichiro Enomoto
Kazuomi Inoue
Kazuto Shimada
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of PH12022550475A1 publication Critical patent/PH12022550475A1/en
Publication of PH12022550475B1 publication Critical patent/PH12022550475B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Graft Or Block Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
PH1/2022/550475A 2019-08-27 2020-08-26 Method of manufacturing cured film, photocurable resin composition, method of manufacturing laminate, and method of manufacturing semiconductor device PH12022550475B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019154278 2019-08-27
PCT/JP2020/032182 WO2021039841A1 (ja) 2019-08-27 2020-08-26 硬化膜の製造方法、光硬化性樹脂組成物、積層体の製造方法、及び、半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
PH12022550475A1 PH12022550475A1 (en) 2023-03-06
PH12022550475B1 true PH12022550475B1 (en) 2024-02-28

Family

ID=74684188

Family Applications (1)

Application Number Title Priority Date Filing Date
PH1/2022/550475A PH12022550475B1 (en) 2019-08-27 2020-08-26 Method of manufacturing cured film, photocurable resin composition, method of manufacturing laminate, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US12422750B2 (https=)
JP (1) JP7300511B2 (https=)
KR (1) KR102648552B1 (https=)
CN (1) CN114341731B (https=)
PH (1) PH12022550475B1 (https=)
TW (1) TWI841777B (https=)
WO (1) WO2021039841A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220350244A1 (en) * 2019-09-11 2022-11-03 Toray Industries, Inc. Photosensitive resin composition, cured film, and display device
KR102782505B1 (ko) * 2020-12-07 2025-03-14 주식회사 엘지화학 폴리이미드 수지, 포지티브형 감광성 수지 조성물, 절연막 및 반도체 장치
TW202248755A (zh) * 2021-03-22 2022-12-16 日商富士軟片股份有限公司 負型感光性樹脂組成物、硬化物、積層體、硬化物的製造方法以及半導體元件
KR102815437B1 (ko) * 2022-04-20 2025-05-29 삼성에스디아이 주식회사 감광성 수지 조성물, 이를 이용하여 제조된 감광성 수지막, 상기 감광성 수지막을 포함하는 컬러필터 및 cmos 이미지 센서, 디스플레이 장치 및 카메라
WO2024004462A1 (ja) * 2022-06-30 2024-01-04 Jsr株式会社 ネガ型感光性樹脂組成物、パターンを有する樹脂膜の製造方法、パターンを有する樹脂膜、および半導体回路基板
WO2025205295A1 (ja) * 2024-03-26 2025-10-02 東レ株式会社 積層体、それを用いたシンチレータパネル、電子部品およびインダクタ
NL2038124B1 (en) 2024-07-02 2026-01-16 Fujifilm Electronic Mat Europe N V Photosensitive polyimide precursor composition, cured film, laminate, method for producing cured film and semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005181353A (ja) * 2002-11-29 2005-07-07 Sumitomo Chemical Co Ltd 感放射線性樹脂組成物
WO2007092011A1 (en) * 2006-02-10 2007-08-16 Central Glass Co., Ltd. Photosensitive polyimide composition and polyimide precursor composition
EP2133743B1 (en) * 2007-03-12 2018-01-24 Hitachi Chemical DuPont Microsystems, Ltd. Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part
KR101399281B1 (ko) * 2007-06-29 2014-05-26 주식회사 동진쎄미켐 유기박막 트랜지스터용 감광성 수지 조성물
WO2011065215A1 (ja) * 2009-11-27 2011-06-03 Jsr株式会社 ポジ型感放射線性組成物、硬化膜及びその形成方法
CN102770805B (zh) * 2010-02-26 2016-10-12 太阳控股株式会社 图像形成方法以及用于该方法的感光性组合物
CN111562720B (zh) * 2014-02-21 2023-09-29 东京毅力科创株式会社 光增感化学放大型抗蚀剂材料、图案形成方法、半导体器件、光刻用掩模、纳米压印用模板
CN107709408B (zh) * 2015-06-30 2020-02-14 富士胶片株式会社 前驱体组合物、感光性树脂组合物、前驱体组合物的制造方法、固化膜、固化膜的制造方法及半导体器件
TWI634135B (zh) * 2015-12-25 2018-09-01 日商富士軟片股份有限公司 樹脂、組成物、硬化膜、硬化膜的製造方法及半導體元件
TWI630457B (zh) 2016-02-05 2018-07-21 南韓商Ｌｇ化學股份有限公司 光固化及熱固化樹脂組成物以及抗焊乾膜
JP6487875B2 (ja) * 2016-04-19 2019-03-20 信越化学工業株式会社 テトラカルボン酸ジエステル化合物、ポリイミド前駆体の重合体及びその製造方法、ネガ型感光性樹脂組成物、ポジ型感光性樹脂組成物、パターン形成方法、及び硬化被膜形成方法
JP2018087956A (ja) * 2016-04-26 2018-06-07 Jsr株式会社 着色硬化膜の製造方法及びカラーフィルタの画素パターンの形成方法
JP6616743B2 (ja) * 2016-06-30 2019-12-04 信越化学工業株式会社 シリコーン骨格含有高分子化合物、光硬化性樹脂組成物、光硬化性ドライフィルム、積層体、及びパターン形成方法
WO2018123836A1 (ja) * 2016-12-28 2018-07-05 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス
US20200019060A1 (en) 2017-03-21 2020-01-16 Toray Industries, Inc. Photosensitive resin composition, photosensitive resin composition film, insulating film, and electronic component
TWI779162B (zh) * 2018-01-29 2022-10-01 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法、積層體的製造方法、半導體器件

Also Published As

Publication number Publication date
TWI841777B (zh) 2024-05-11
WO2021039841A1 (ja) 2021-03-04
CN114341731A (zh) 2022-04-12
KR102648552B1 (ko) 2024-03-18
US12422750B2 (en) 2025-09-23
CN114341731B (zh) 2025-06-27
JP7300511B2 (ja) 2023-06-29
KR20220031113A (ko) 2022-03-11
JPWO2021039841A1 (https=) 2021-03-04
US20220171285A1 (en) 2022-06-02
PH12022550475A1 (en) 2023-03-06
TW202112836A (zh) 2021-04-01

Similar Documents

Publication Publication Date Title
PH12022550475B1 (en) Method of manufacturing cured film, photocurable resin composition, method of manufacturing laminate, and method of manufacturing semiconductor device
IN2014DN03390A (https=)
MY207003A (en) Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
PH12022551233A1 (en) Pattern forming method, photocurable resin composition, method of manufacturing laminate, and method of manufacturing electronic device
MY187481A (en) Photosensitive resin composition
TW200608152A (en) Method for manufacturing a microstructure, exposure device, and electronic apparatus
TW200732861A (en) Exposure apparatus, exposing method, and device manufacturing method
MY199738A (en) Photosensitive resin composition
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
TW201203318A (en) Exposure method, exposure device, and device manufacturing method
WO2009078380A1 (ja) ネガ型感光性樹脂積層体を用いたレジスト硬化物の製造方法、ネガ型感光性樹脂積層体、及びネガ型感光性樹脂積層体の使用方法
MY174577A (en) Photosensitive resin composition and photosensitive resin laminate
JPWO2021039841A5 (https=)
BR112017009688A2 (pt) placa de impressão flexográfica com maior eficiência de cura
SG155147A1 (en) Methods for enhancing photolithography patterning
CN102141728B (zh) 立体图纹形成方法
EP3979002A4 (en) PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, MULTILAYERY CIRCUIT BOARD, SEMICONDUCTOR CASE AND METHOD OF MAKING A MULTILAYERY CIRCUIT BOARD
EP2816394A1 (en) Light guide plate lattice point manufacturing method, light guide plate manufacturing method, backlight module, and display apparatus
MY206335A (en) Photosensitive resin composition and method for forming resist pattern
KR20150049997A (ko) 포토 마스크 및 이의 제조 방법, 포토 마스크를 이용한 트렌치 형성 방법
SG154398A1 (en) Integrated circuit system employing multiple exposure dummy patterning technology
TW200709940A (en) Method for manufacturing liquid discharge head, liquid discharge head, and liquid discharge recording apparatus
TW200618062A (en) Solid immersion lens lithography
WO2009016951A1 (ja) 半導体装置の製造方法、半導体装置、及び、露光装置
JP5847754B2 (ja) 感光性樹脂構造体、ドライフィルム、及びフレキシブルプリント配線板