PH12011000403A1 - Semiconductor device package and method of manufacturing thereof - Google Patents

Semiconductor device package and method of manufacturing thereof

Info

Publication number
PH12011000403A1
PH12011000403A1 PH1/2011/000403A PH12011000403A PH12011000403A1 PH 12011000403 A1 PH12011000403 A1 PH 12011000403A1 PH 12011000403 A PH12011000403 A PH 12011000403A PH 12011000403 A1 PH12011000403 A1 PH 12011000403A1
Authority
PH
Philippines
Prior art keywords
semiconductor device
passivation layer
connection pads
device package
manufacturing
Prior art date
Application number
PH1/2011/000403A
Other languages
English (en)
Inventor
Richard Alfred Beaupre
Thomas Bert Gorczyca
Arun Virupaksha Gowda
Paul Alan Mcconnelee
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of PH12011000403A1 publication Critical patent/PH12011000403A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07131—Means for applying material, e.g. for deposition or forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
PH1/2011/000403A 2010-12-08 2011-12-02 Semiconductor device package and method of manufacturing thereof PH12011000403A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/962,761 US8310040B2 (en) 2010-12-08 2010-12-08 Semiconductor device package having high breakdown voltage and low parasitic inductance and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
PH12011000403A1 true PH12011000403A1 (en) 2014-07-23

Family

ID=45002829

Family Applications (1)

Application Number Title Priority Date Filing Date
PH1/2011/000403A PH12011000403A1 (en) 2010-12-08 2011-12-02 Semiconductor device package and method of manufacturing thereof

Country Status (8)

Country Link
US (2) US8310040B2 (cg-RX-API-DMAC10.html)
EP (1) EP2463901B1 (cg-RX-API-DMAC10.html)
JP (1) JP5926547B2 (cg-RX-API-DMAC10.html)
KR (1) KR101944477B1 (cg-RX-API-DMAC10.html)
CN (1) CN102543946B (cg-RX-API-DMAC10.html)
PH (1) PH12011000403A1 (cg-RX-API-DMAC10.html)
SG (1) SG182076A1 (cg-RX-API-DMAC10.html)
TW (1) TWI544590B (cg-RX-API-DMAC10.html)

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US8431438B2 (en) 2010-04-06 2013-04-30 Intel Corporation Forming in-situ micro-feature structures with coreless packages
US9209151B2 (en) 2013-09-26 2015-12-08 General Electric Company Embedded semiconductor device package and method of manufacturing thereof
US9806051B2 (en) 2014-03-04 2017-10-31 General Electric Company Ultra-thin embedded semiconductor device package and method of manufacturing thereof
JP6382348B2 (ja) * 2014-05-15 2018-08-29 インテル コーポレイション 集積回路アセンブリ用の成形コンポジットエンクロージャ
US10435555B2 (en) * 2014-05-29 2019-10-08 Az Electronic Materials (Luxembourg) S.A.R.L Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
EP3065164A1 (en) * 2015-03-04 2016-09-07 ABB Technology AG Power semiconductor arrangement and method of generating a power semiconductor arrangement
US20210273124A1 (en) * 2018-07-13 2021-09-02 Array Photonics, Inc. Dual-depth via device and process for large back contact solar cells
DE102020135088A1 (de) * 2020-03-27 2021-09-30 Samsung Electronics Co., Ltd. Halbleitervorrichtung
CN113517205A (zh) * 2020-04-27 2021-10-19 台湾积体电路制造股份有限公司 半导体器件及其形成方法
US11699663B2 (en) 2020-04-27 2023-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Passivation scheme design for wafer singulation
CN115939222B (zh) * 2022-11-24 2025-10-17 湖南三安半导体有限责任公司 半导体器件及其制备方法
CN116936592A (zh) * 2023-07-24 2023-10-24 华天科技（昆山）电子有限公司 一种高可靠性的cis芯片封装结构及方法

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US4198444A (en) * 1975-08-04 1980-04-15 General Electric Company Method for providing substantially hermetic sealing means for electronic components
US4249299A (en) * 1979-03-05 1981-02-10 Hughes Aircraft Company Edge-around leads for backside connections to silicon circuit die
US5161093A (en) 1990-07-02 1992-11-03 General Electric Company Multiple lamination high density interconnect process and structure employing a variable crosslinking adhesive
KR20040000387A (ko) * 1996-10-08 2004-01-03 히다치 가세고교 가부시끼가이샤 접착제 및 양면 접착 필름
EP0926729A3 (en) * 1997-12-10 1999-12-08 Mitsubishi Gas Chemical Company, Inc. Semiconductor plastic package and process for the production thereof
US6239980B1 (en) 1998-08-31 2001-05-29 General Electric Company Multimodule interconnect structure and process
US6306680B1 (en) 1999-02-22 2001-10-23 General Electric Company Power overlay chip scale packages for discrete power devices
JP3602000B2 (ja) * 1999-04-26 2004-12-15 沖電気工業株式会社 半導体装置および半導体モジュール
US6232151B1 (en) 1999-11-01 2001-05-15 General Electric Company Power electronic module packaging
JP4454814B2 (ja) * 2000-08-29 2010-04-21 Ｎｅｃエレクトロニクス株式会社 樹脂封止型半導体装置及びその製造方法
US7633765B1 (en) * 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
US7262444B2 (en) 2005-08-17 2007-08-28 General Electric Company Power semiconductor packaging method and structure
JP5033682B2 (ja) * 2008-03-12 2012-09-26 株式会社テラミクロス 半導体素子およびその製造方法並びに半導体装置およびその製造方法
WO2009156970A1 (en) * 2008-06-26 2009-12-30 Nxp B.V. Packaged semiconductor product and method for manufacture thereof
TW201101547A (en) * 2009-06-23 2011-01-01 Univ Kun Shan Packaging structure of light emitting diode

Also Published As

Publication number Publication date
SG182076A1 (en) 2012-07-30
JP2012124486A (ja) 2012-06-28
CN102543946B (zh) 2016-12-07
TW201246475A (en) 2012-11-16
KR20120089993A (ko) 2012-08-16
EP2463901A2 (en) 2012-06-13
US20120329207A1 (en) 2012-12-27
TWI544590B (zh) 2016-08-01
EP2463901B1 (en) 2018-06-13
JP5926547B2 (ja) 2016-05-25
KR101944477B1 (ko) 2019-01-31
CN102543946A (zh) 2012-07-04
US8310040B2 (en) 2012-11-13
EP2463901A3 (en) 2012-08-29
US8586421B2 (en) 2013-11-19
US20120146234A1 (en) 2012-06-14

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