NO963100L - Vertikal-integrert sensor - Google Patents
Vertikal-integrert sensorInfo
- Publication number
- NO963100L NO963100L NO963100A NO963100A NO963100L NO 963100 L NO963100 L NO 963100L NO 963100 A NO963100 A NO 963100A NO 963100 A NO963100 A NO 963100A NO 963100 L NO963100 L NO 963100L
- Authority
- NO
- Norway
- Prior art keywords
- integrated sensor
- vertical integrated
- vertical
- sensor
- integrated
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
- G01L19/143—Two part housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52342295A | 1995-09-05 | 1995-09-05 |
Publications (3)
Publication Number | Publication Date |
---|---|
NO963100D0 NO963100D0 (no) | 1996-07-25 |
NO963100L true NO963100L (no) | 1997-03-06 |
NO318404B1 NO318404B1 (no) | 2005-03-14 |
Family
ID=24084933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO19963100A NO318404B1 (no) | 1995-09-05 | 1996-07-25 | Vertikal-integrert sensor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5600071A (no) |
EP (1) | EP0762096B1 (no) |
JP (1) | JP3881409B2 (no) |
DE (1) | DE69605876T2 (no) |
NO (1) | NO318404B1 (no) |
Families Citing this family (89)
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US6331163B1 (en) | 1998-01-08 | 2001-12-18 | Microsense Cardiovascular Systems (1196) Ltd. | Protective coating for bodily sensor |
US6171972B1 (en) | 1998-03-17 | 2001-01-09 | Rosemount Aerospace Inc. | Fracture-resistant micromachined devices |
US20020003274A1 (en) * | 1998-08-27 | 2002-01-10 | Janusz Bryzek | Piezoresistive sensor with epi-pocket isolation |
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DE102015226642A1 (de) * | 2015-12-23 | 2017-06-29 | Robert Bosch Gmbh | Sensor zur Erfassung eines Drucks eines fluiden Mediums |
US10458872B2 (en) * | 2016-03-09 | 2019-10-29 | Flo Technologies, Inc. | Electronic pressure sensor for measurement of pressure in a fluid media |
US11047756B2 (en) | 2016-03-09 | 2021-06-29 | Flo Technologies, Inc. | Electronic pressure sensor for measurement of pressure in a fluid media |
CN106124117B (zh) * | 2016-06-14 | 2019-04-23 | 中国科学院地质与地球物理研究所 | 一种双空腔压力计芯片及其制造工艺 |
US10247629B2 (en) * | 2017-04-27 | 2019-04-02 | Continental Automotive Systems, Inc. | Stacked or unstacked MEMS pressure sensor with through-hole cap and plurality of chip capacitors |
US10890502B2 (en) | 2017-09-08 | 2021-01-12 | Fuji Electric Co., Ltd. | Pressure sensor device |
JP7107051B2 (ja) * | 2017-09-08 | 2022-07-27 | 富士電機株式会社 | 圧力センサ装置 |
US10781094B2 (en) * | 2017-10-23 | 2020-09-22 | Te Connectivity Corporation | Pressure sensor assembly mounted to a ceramic substrate |
KR102052540B1 (ko) * | 2018-04-10 | 2020-01-07 | 주식회사 멤스팩 | 압력 센서 조립체 |
US11280651B2 (en) | 2019-03-25 | 2022-03-22 | Flo Technologies, Inc. | Thin film thermal mass flow sensor in fluid applications |
US11624636B2 (en) | 2019-05-07 | 2023-04-11 | Fortune Brands Water Innovations LLC | Turbine design for flow meter |
DE102020108242A1 (de) | 2020-03-25 | 2021-09-30 | Viimagic Gesellschaft mit beschränkter Haftung | Montageträger für MEMS Baugruppen |
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US3204463A (en) * | 1962-09-18 | 1965-09-07 | Taber Instr Corp | Force operated instrument |
US4023562A (en) * | 1975-09-02 | 1977-05-17 | Case Western Reserve University | Miniature pressure transducer for medical use and assembly method |
JPS5544786A (en) * | 1978-09-27 | 1980-03-29 | Hitachi Ltd | Pressure sensor |
US4222277A (en) * | 1979-08-13 | 1980-09-16 | Kulite Semiconductor Products, Inc. | Media compatible pressure transducer |
US4322980A (en) * | 1979-11-08 | 1982-04-06 | Hitachi, Ltd. | Semiconductor pressure sensor having plural pressure sensitive diaphragms and method |
JPS597234A (ja) * | 1982-07-05 | 1984-01-14 | Aisin Seiki Co Ltd | 圧力センサ |
JPS63165725A (ja) * | 1986-12-26 | 1988-07-09 | Aisin Seiki Co Ltd | 圧力センサ−用歪ゲ−ジ |
JPH0810170B2 (ja) * | 1987-03-06 | 1996-01-31 | 株式会社日立製作所 | 半導体絶対圧力センサの製造方法 |
US4823605A (en) * | 1987-03-18 | 1989-04-25 | Siemens Aktiengesellschaft | Semiconductor pressure sensor with casing and method for its manufacture |
US4841777A (en) * | 1988-03-22 | 1989-06-27 | Honeywell Inc. | Pressure transmitter assembly |
US5029479A (en) * | 1988-08-15 | 1991-07-09 | Imo Industries, Inc. | Differential pressure transducers |
US4939497A (en) * | 1989-04-18 | 1990-07-03 | Nippon Soken, Inc. | Pressure sensor |
US5295395A (en) * | 1991-02-07 | 1994-03-22 | Hocker G Benjamin | Diaphragm-based-sensors |
US5132559A (en) * | 1991-05-03 | 1992-07-21 | Motorola, Inc. | Circuit for trimming input offset voltage utilizing variable resistors |
US5209122A (en) * | 1991-11-20 | 1993-05-11 | Delco Electronics Corporation | Pressurer sensor and method for assembly of same |
JPH07110277A (ja) * | 1993-10-08 | 1995-04-25 | Oki Electric Ind Co Ltd | シリコン圧力センサ |
-
1996
- 1996-07-22 US US08/684,723 patent/US5600071A/en not_active Expired - Lifetime
- 1996-07-25 NO NO19963100A patent/NO318404B1/no not_active IP Right Cessation
- 1996-08-28 JP JP24722596A patent/JP3881409B2/ja not_active Expired - Fee Related
- 1996-08-30 DE DE69605876T patent/DE69605876T2/de not_active Expired - Fee Related
- 1996-08-30 EP EP96113883A patent/EP0762096B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5600071A (en) | 1997-02-04 |
NO318404B1 (no) | 2005-03-14 |
JP3881409B2 (ja) | 2007-02-14 |
DE69605876D1 (de) | 2000-02-03 |
JPH09126927A (ja) | 1997-05-16 |
EP0762096B1 (en) | 1999-12-29 |
NO963100D0 (no) | 1996-07-25 |
DE69605876T2 (de) | 2000-07-20 |
EP0762096A1 (en) | 1997-03-12 |
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