NO902061L - Novolakkholdig fotoresist og anvendelse derav. - Google Patents

Novolakkholdig fotoresist og anvendelse derav.

Info

Publication number
NO902061L
NO902061L NO90902061A NO902061A NO902061L NO 902061 L NO902061 L NO 902061L NO 90902061 A NO90902061 A NO 90902061A NO 902061 A NO902061 A NO 902061A NO 902061 L NO902061 L NO 902061L
Authority
NO
Norway
Prior art keywords
photoresists
highly branched
photoresist
negative
acting
Prior art date
Application number
NO90902061A
Other languages
English (en)
Other versions
NO902061D0 (no
Inventor
Leonard Edward Bogan
Karen Ann Graziano
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Publication of NO902061D0 publication Critical patent/NO902061D0/no
Publication of NO902061L publication Critical patent/NO902061L/no

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Sterkt forgrenede novolakkharpikser benyttes som fotoresister. Bruken av sterkt forgrenede novolakkharpikser som film-dannende bindemiddelkomponent i et fotoresistpreparat har vist seg å ake fotohastigheten og den litografiske kontrast for foto-resisten i forhold til fotoresister inneholdende novolakkpoly-merer med lavere grad av forgrening. De sterkt forgrenede novo-lakker er spesielt brukbare i negativtvirkende fotoresister og mere spesielt i negativtvirkende, syreherdende fotoresister.
NO90902061A 1989-05-12 1990-05-10 Novolakkholdig fotoresist og anvendelse derav. NO902061L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35115389A 1989-05-12 1989-05-12

Publications (2)

Publication Number Publication Date
NO902061D0 NO902061D0 (no) 1990-05-10
NO902061L true NO902061L (no) 1990-11-13

Family

ID=23379794

Family Applications (1)

Application Number Title Priority Date Filing Date
NO90902061A NO902061L (no) 1989-05-12 1990-05-10 Novolakkholdig fotoresist og anvendelse derav.

Country Status (11)

Country Link
EP (1) EP0397460A3 (no)
JP (1) JPH0379619A (no)
KR (1) KR900018186A (no)
CN (1) CN1047398A (no)
AU (1) AU635928B2 (no)
BR (1) BR9002205A (no)
CA (1) CA2015721A1 (no)
FI (1) FI902375A0 (no)
IL (1) IL94353A (no)
NO (1) NO902061L (no)
ZA (1) ZA903560B (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939229A (en) * 1989-05-12 1990-07-03 Rohm And Haas Company Method for preparing lithographically sensitive branched novolaks using a mannich base intermediate
US5667934A (en) * 1990-10-09 1997-09-16 International Business Machines Corporation Thermally stable photoimaging composition
TW207009B (no) * 1991-01-31 1993-06-01 Sumitomo Chemical Co
US6455223B1 (en) 1999-03-26 2002-09-24 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP2002203869A (ja) 2000-10-30 2002-07-19 Seiko Epson Corp バンプの形成方法、半導体装置及びその製造方法、回路基板並びに電子機器
US6828383B2 (en) * 2002-12-13 2004-12-07 Occidental Petroleum Phenolic modified resorcinolic resins for rubber compounding
US20230374213A1 (en) * 2020-10-05 2023-11-23 Advanced Polymer Coatings, Inc. Process for preparing branched phenolic novolak

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505084B1 (no) * 1970-09-16 1975-02-28
US4624909A (en) * 1984-04-27 1986-11-25 Nec Corporation Silicon-containing novolak resin and resist material and pattern forming method using same
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
DE3810247A1 (de) * 1987-03-26 1988-10-06 Toshiba Kawasaki Kk Lichtempfindliche beschichtungsmasse
US4939229A (en) * 1989-05-12 1990-07-03 Rohm And Haas Company Method for preparing lithographically sensitive branched novolaks using a mannich base intermediate

Also Published As

Publication number Publication date
EP0397460A2 (en) 1990-11-14
BR9002205A (pt) 1991-08-13
ZA903560B (en) 1991-01-30
CA2015721A1 (en) 1990-11-12
AU635928B2 (en) 1993-04-08
CN1047398A (zh) 1990-11-28
JPH0379619A (ja) 1991-04-04
IL94353A (en) 1994-02-27
AU5488290A (en) 1990-11-15
NO902061D0 (no) 1990-05-10
EP0397460A3 (en) 1992-02-26
FI902375A0 (fi) 1990-05-11
KR900018186A (ko) 1990-12-20
IL94353A0 (en) 1991-03-10

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