NO872389L - Fremgangsmaate og innretning til aa skille silisiumskiver som kan benyttes til solceller, fra et silisiumbaand fremstilt ved den saakalte horisontale baandtrekkemetode. - Google Patents
Fremgangsmaate og innretning til aa skille silisiumskiver som kan benyttes til solceller, fra et silisiumbaand fremstilt ved den saakalte horisontale baandtrekkemetode.Info
- Publication number
- NO872389L NO872389L NO872389A NO872389A NO872389L NO 872389 L NO872389 L NO 872389L NO 872389 A NO872389 A NO 872389A NO 872389 A NO872389 A NO 872389A NO 872389 L NO872389 L NO 872389L
- Authority
- NO
- Norway
- Prior art keywords
- melt
- graphite
- silicon
- shielding bodies
- melting
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 229920001296 polysiloxane Polymers 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 10
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 239000004744 fabric Substances 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 4
- 239000004917 carbon fiber Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000009548 growth disturbance Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
- Y10T117/1048—Pulling includes a horizontal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3619018 | 1986-06-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO872389D0 NO872389D0 (no) | 1987-06-05 |
| NO872389L true NO872389L (no) | 1987-12-07 |
Family
ID=6302398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO872389A NO872389L (no) | 1986-06-06 | 1987-06-05 | Fremgangsmaate og innretning til aa skille silisiumskiver som kan benyttes til solceller, fra et silisiumbaand fremstilt ved den saakalte horisontale baandtrekkemetode. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4871517A (ja) |
| EP (1) | EP0252279B1 (ja) |
| JP (1) | JPS62291977A (ja) |
| CN (1) | CN87103690A (ja) |
| DE (1) | DE3767932D1 (ja) |
| NO (1) | NO872389L (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5238879A (en) * | 1988-03-24 | 1993-08-24 | Siemens Aktiengesellschaft | Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells |
| JP2915434B2 (ja) * | 1989-06-16 | 1999-07-05 | キヤノン株式会社 | 半導体層の形成方法と形成装置及びこの形成方法を用いる太陽電池の製造方法 |
| US5258325A (en) * | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5256562A (en) * | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| KR20030059745A (ko) * | 2002-01-04 | 2003-07-10 | 주성엔지니어링(주) | 반사기를 이용한 웨이퍼 온도 보상기 |
| US7955433B2 (en) * | 2007-07-26 | 2011-06-07 | Calisolar, Inc. | Method and system for forming a silicon ingot using a low-grade silicon feedstock |
| US20140097432A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, laminate, and system and methods for forming same |
| US9957636B2 (en) * | 2014-03-27 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | System and method for crystalline sheet growth using a cold block and gas jet |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
| DE2850805C2 (de) * | 1978-11-23 | 1986-08-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen |
| DE2850790A1 (de) * | 1978-11-23 | 1980-06-12 | Siemens Ag | Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen |
| FR2493350B1 (fr) * | 1980-11-03 | 1985-09-13 | Labo Electronique Physique | Nouveau substrat, en ruban, procede de depot de silicium sur ce ruban, et cellules solaires ainsi obtenues |
| DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
| DE3306515A1 (de) * | 1983-02-24 | 1984-08-30 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| US4554203A (en) * | 1984-04-09 | 1985-11-19 | Siemens Aktiengesellschaft | Method for manufacturing large surface silicon crystal bodies for solar cells, and bodies so produced |
| EP0170119B1 (de) * | 1984-07-31 | 1988-10-12 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung |
-
1987
- 1987-05-29 JP JP62134761A patent/JPS62291977A/ja active Pending
- 1987-06-01 DE DE8787107892T patent/DE3767932D1/de not_active Expired - Fee Related
- 1987-06-01 EP EP87107892A patent/EP0252279B1/de not_active Expired - Lifetime
- 1987-06-05 NO NO872389A patent/NO872389L/no unknown
- 1987-06-06 CN CN198787103690A patent/CN87103690A/zh active Pending
-
1988
- 1988-09-26 US US07/251,970 patent/US4871517A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4871517A (en) | 1989-10-03 |
| JPS62291977A (ja) | 1987-12-18 |
| EP0252279B1 (de) | 1991-02-06 |
| EP0252279A2 (de) | 1988-01-13 |
| DE3767932D1 (de) | 1991-03-14 |
| NO872389D0 (no) | 1987-06-05 |
| EP0252279A3 (en) | 1988-06-08 |
| CN87103690A (zh) | 1988-01-13 |
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