NO870775L - Fremgangsmte for fremstilling av silisiumnitrid med lavt karboninnhold. - Google Patents
Fremgangsmte for fremstilling av silisiumnitrid med lavt karboninnhold.Info
- Publication number
- NO870775L NO870775L NO870775A NO870775A NO870775L NO 870775 L NO870775 L NO 870775L NO 870775 A NO870775 A NO 870775A NO 870775 A NO870775 A NO 870775A NO 870775 L NO870775 L NO 870775L
- Authority
- NO
- Norway
- Prior art keywords
- nitrid
- silicone
- procedure
- preparation
- carbon content
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0687—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Silicon Compounds (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19863608352 DE3608352A1 (de) | 1986-03-13 | 1986-03-13 | Verfahren zur herstellung von kohlenstoffarmem siliciumnitrid |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| NO870775D0 NO870775D0 (no) | 1987-02-25 |
| NO870775L true NO870775L (no) | 1987-09-14 |
| NO169062B NO169062B (no) | 1992-01-27 |
| NO169062C NO169062C (no) | 1992-05-06 |
Family
ID=6296235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO870775A NO169062C (no) | 1986-03-13 | 1987-02-25 | Fremgangsmaate for fremstilling av silisiumnitridpulver med lavt karboninnhold |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4798714A (no) |
| EP (1) | EP0237860B1 (no) |
| JP (1) | JPS62216907A (no) |
| KR (1) | KR950001033B1 (no) |
| DE (2) | DE3608352A1 (no) |
| NO (1) | NO169062C (no) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5219537A (en) * | 1990-04-03 | 1993-06-15 | Phillips Petroleum Company | Production of nitride products |
| US5538675A (en) * | 1994-04-14 | 1996-07-23 | The Dow Chemical Company | Method for producing silicon nitride/silicon carbide composite |
| KR101467438B1 (ko) * | 2013-01-10 | 2014-12-03 | 조항선 | 질화규소 분말의 제조방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290499A (en) * | 1976-01-27 | 1977-07-29 | Toshiba Ceramics Co | Process for preparing siliconnitride having high alphaaphase content |
| JPS53102300A (en) * | 1977-02-18 | 1978-09-06 | Toshiba Corp | Preparation of type silicon nitride powders |
| JPS57135704A (en) * | 1981-02-10 | 1982-08-21 | Ube Ind Ltd | Preparation of crystalline silicon nitride powder |
| JPS5935008A (ja) * | 1982-08-20 | 1984-02-25 | Onoda Cement Co Ltd | 窒化珪素の精製方法 |
| JPS60112607A (ja) * | 1983-11-18 | 1985-06-19 | Denki Kagaku Kogyo Kk | 白色窒化けい素粉末の製造方法 |
| JPS60171282A (ja) * | 1984-02-10 | 1985-09-04 | 黒崎窯業株式会社 | Ｓｉ↓３Ν↓４−ＳｉＣ系セラミツクス焼結体の製造方法 |
-
1986
- 1986-03-13 DE DE19863608352 patent/DE3608352A1/de not_active Withdrawn
- 1986-10-06 US US06/915,403 patent/US4798714A/en not_active Expired - Fee Related
-
1987
- 1987-02-25 NO NO870775A patent/NO169062C/no unknown
- 1987-03-02 DE DE8787102914T patent/DE3764499D1/de not_active Expired - Lifetime
- 1987-03-02 EP EP87102914A patent/EP0237860B1/de not_active Expired - Lifetime
- 1987-03-12 KR KR1019870002202A patent/KR950001033B1/ko active IP Right Grant
- 1987-03-12 JP JP62055489A patent/JPS62216907A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US4798714A (en) | 1989-01-17 |
| DE3608352A1 (de) | 1987-09-17 |
| DE3764499D1 (de) | 1990-10-04 |
| EP0237860A3 (en) | 1988-03-02 |
| EP0237860B1 (de) | 1990-08-29 |
| KR870008783A (ko) | 1987-10-20 |
| NO870775D0 (no) | 1987-02-25 |
| NO169062C (no) | 1992-05-06 |
| JPS62216907A (ja) | 1987-09-24 |
| NO169062B (no) | 1992-01-27 |
| KR950001033B1 (ko) | 1995-02-08 |
| EP0237860A2 (de) | 1987-09-23 |
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