NO336720B1 - Fremgangsmåte for forbedring av effektiviteten av solceller. - Google Patents

Fremgangsmåte for forbedring av effektiviteten av solceller.

Info

Publication number
NO336720B1
NO336720B1 NO20131216A NO20131216A NO336720B1 NO 336720 B1 NO336720 B1 NO 336720B1 NO 20131216 A NO20131216 A NO 20131216A NO 20131216 A NO20131216 A NO 20131216A NO 336720 B1 NO336720 B1 NO 336720B1
Authority
NO
Norway
Prior art keywords
ingot
silicon
ingots
solar cells
efficiency
Prior art date
Application number
NO20131216A
Other languages
English (en)
Norwegian (no)
Other versions
NO20131216A1 (no
Inventor
Gunnar Halvorsen
Anne-Karin Søiland
Original Assignee
Elkem Solar As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elkem Solar As filed Critical Elkem Solar As
Priority to NO20131216A priority Critical patent/NO336720B1/no
Priority to PCT/NO2013/000046 priority patent/WO2015034367A1/fr
Priority to NO20140621A priority patent/NO339608B1/no
Priority to CA2920969A priority patent/CA2920969C/fr
Priority to US14/916,406 priority patent/US10483428B2/en
Priority to PCT/NO2014/050165 priority patent/WO2015034373A1/fr
Priority to EP14843034.1A priority patent/EP3044350A4/fr
Priority to SG11201601750SA priority patent/SG11201601750SA/en
Priority to BR112016005004-5A priority patent/BR112016005004B1/pt
Priority to CN201480049485.1A priority patent/CN105723020B/zh
Publication of NO20131216A1 publication Critical patent/NO20131216A1/no
Publication of NO336720B1 publication Critical patent/NO336720B1/no
Priority to CL2016000452A priority patent/CL2016000452A1/es
Priority to SA516370689A priority patent/SA516370689B1/ar
Priority to US16/023,317 priority patent/US10693031B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
NO20131216A 2013-09-09 2013-09-09 Fremgangsmåte for forbedring av effektiviteten av solceller. NO336720B1 (no)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NO20131216A NO336720B1 (no) 2013-09-09 2013-09-09 Fremgangsmåte for forbedring av effektiviteten av solceller.
PCT/NO2013/000046 WO2015034367A1 (fr) 2013-09-09 2013-10-01 Procédé permettant d'améliorer le rendement de photopiles
NO20140621A NO339608B1 (no) 2013-09-09 2014-05-15 Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
SG11201601750SA SG11201601750SA (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
US14/916,406 US10483428B2 (en) 2013-09-09 2014-09-09 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells
PCT/NO2014/050165 WO2015034373A1 (fr) 2013-09-09 2014-09-09 Lingots de silicium multicristallin, alliage mère de silicium, procédé visant à augmenter le rendement de lingots de silicium multicristallin pour photopiles solaires
EP14843034.1A EP3044350A4 (fr) 2013-09-09 2014-09-09 Lingots de silicium multicristallin, alliage mère de silicium, procédé visant à augmenter le rendement de lingots de silicium multicristallin pour photopiles solaires
CA2920969A CA2920969C (fr) 2013-09-09 2014-09-09 Lingots de silicium multicristallin, alliage mere de silicium, procede visant a augmenter le rendement de lingots de silicium multicristallin pour photopiles solaires
BR112016005004-5A BR112016005004B1 (pt) 2013-09-09 2014-09-09 Método para aumentar o rendimento de lingotes de silício
CN201480049485.1A CN105723020B (zh) 2013-09-09 2014-09-09 多晶硅锭、硅母合金、用于提高太阳能电池的多晶硅锭的产率的方法
CL2016000452A CL2016000452A1 (es) 2013-09-09 2016-02-26 Lingotes de silicona multicristalina, aleacion maestra de silicona, procedimiento para aumentar el rendimiento de lingotes de silicona multicristalina para celulas solares
SA516370689A SA516370689B1 (ar) 2013-09-09 2016-03-07 سبائك من السيليكون متعدد التبلور والسبيكة الأساسية للسيليكون
US16/023,317 US10693031B2 (en) 2013-09-09 2018-06-29 Multicrystalline silicon ingots, silicon masteralloy, method for increasing the yield of multicrystalline silicon ingots for solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20131216A NO336720B1 (no) 2013-09-09 2013-09-09 Fremgangsmåte for forbedring av effektiviteten av solceller.

Publications (2)

Publication Number Publication Date
NO20131216A1 NO20131216A1 (no) 2015-03-10
NO336720B1 true NO336720B1 (no) 2015-10-26

Family

ID=52628708

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20131216A NO336720B1 (no) 2013-09-09 2013-09-09 Fremgangsmåte for forbedring av effektiviteten av solceller.

Country Status (2)

Country Link
NO (1) NO336720B1 (fr)
WO (1) WO2015034367A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US20010032580A1 (en) * 1999-03-15 2001-10-25 Phillips Richard J. Barium doping of molten silicon for use in crystal growing process
US20020086119A1 (en) * 2000-11-15 2002-07-04 Hariharan Allepey V. Protective layer for quartz crucibles used for silicon crystallization
WO2005063621A1 (fr) * 2003-12-29 2005-07-14 Elkem Asa Charge d'alimentation en silicium pour cellules solaires
EP1958923A1 (fr) * 2005-12-06 2008-08-20 Nippon Steel Materials Co., Ltd. Appareil et procede de production de silicium de grande purete
US20090159230A1 (en) * 2006-08-30 2009-06-25 Kyocera Corporation Mold Forming and Molding Method
CN101423220B (zh) * 2008-11-17 2011-04-06 上海普罗新能源有限公司 一种多温区硅材料提纯与铸锭的方法及其装置
US20110217225A1 (en) * 2008-11-03 2011-09-08 Crystal System, Inc. Method and Apparatus for Refining Metallurgical Grade Silicon to Produce Solar Grade Silicon
US20130192302A1 (en) * 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247528A (en) * 1979-04-11 1981-01-27 Dow Corning Corporation Method for producing solar-cell-grade silicon
US5431869A (en) * 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
UA95131C2 (uk) * 2009-08-25 2011-07-11 Частное Акционерное Общество «Пиллар» Спосіб одержання зливків мультикристалічного кремнію індукційним методом

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US20010032580A1 (en) * 1999-03-15 2001-10-25 Phillips Richard J. Barium doping of molten silicon for use in crystal growing process
US20020086119A1 (en) * 2000-11-15 2002-07-04 Hariharan Allepey V. Protective layer for quartz crucibles used for silicon crystallization
WO2005063621A1 (fr) * 2003-12-29 2005-07-14 Elkem Asa Charge d'alimentation en silicium pour cellules solaires
EP1958923A1 (fr) * 2005-12-06 2008-08-20 Nippon Steel Materials Co., Ltd. Appareil et procede de production de silicium de grande purete
US20090159230A1 (en) * 2006-08-30 2009-06-25 Kyocera Corporation Mold Forming and Molding Method
US20110217225A1 (en) * 2008-11-03 2011-09-08 Crystal System, Inc. Method and Apparatus for Refining Metallurgical Grade Silicon to Produce Solar Grade Silicon
CN101423220B (zh) * 2008-11-17 2011-04-06 上海普罗新能源有限公司 一种多温区硅材料提纯与铸锭的方法及其装置
US20130192302A1 (en) * 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
RAVISHANKAR, P.S., "Liquid Encapsulated Bridgman (LEB) method for directional solidification of silicon using calcium chloride", Journal of Crystal Growth, vol. 94 (1),side 62-68, 1. januar 1989, Dated: 01.01.0001 *
TAN, Y et al., "Removal of aluminum and calcium in multicrystalline silicon by vacuum induction melting and directional solidification", Vacuum, vol. 99, side 272-276, 2014, publisert 2013.07.03, Dated: 01.01.0001 *

Also Published As

Publication number Publication date
WO2015034367A1 (fr) 2015-03-12
NO20131216A1 (no) 2015-03-10

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Legal Events

Date Code Title Description
CREP Change of representative

Representative=s name: ZACCO NORWAY AS, POSTBOKS 2003 VIKA, 0125 OSLO

CHAD Change of the owner's name or address (par. 44 patent law, par. patentforskriften)

Owner name: REC SOLAR NORWAY AS, NO