NO20080337L - Metode for a fremstille en mikromekanisk bevegelsessensor, og en mikromekanisk bevelgelsessensor - Google Patents

Metode for a fremstille en mikromekanisk bevegelsessensor, og en mikromekanisk bevelgelsessensor

Info

Publication number
NO20080337L
NO20080337L NO20080337A NO20080337A NO20080337L NO 20080337 L NO20080337 L NO 20080337L NO 20080337 A NO20080337 A NO 20080337A NO 20080337 A NO20080337 A NO 20080337A NO 20080337 L NO20080337 L NO 20080337L
Authority
NO
Norway
Prior art keywords
motion sensor
micromechanical
micromechanical motion
present
sensor component
Prior art date
Application number
NO20080337A
Other languages
English (en)
Norwegian (no)
Inventor
Anssi Blomqvist
Original Assignee
Vti Technologies Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vti Technologies Oy filed Critical Vti Technologies Oy
Publication of NO20080337L publication Critical patent/NO20080337L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C3/00—Measuring distances in line of sight; Optical rangefinders
    • G01C3/02—Details
    • G01C3/06—Use of electric means to obtain final indication
    • G01C3/08—Use of electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
NO20080337A 2005-06-17 2008-01-16 Metode for a fremstille en mikromekanisk bevegelsessensor, og en mikromekanisk bevelgelsessensor NO20080337L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20055324A FI119307B (fi) 2005-06-17 2005-06-17 Menetelmä mikromekaanisen liikeanturin valmistamiseksi ja mikromekaaninen liikeanturi
PCT/FI2006/050258 WO2006134233A1 (en) 2005-06-17 2006-06-13 Method for manufacturing a micromechanical motion sensor, and a micromechanical motion sensor

Publications (1)

Publication Number Publication Date
NO20080337L true NO20080337L (no) 2008-03-14

Family

ID=34778460

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20080337A NO20080337L (no) 2005-06-17 2008-01-16 Metode for a fremstille en mikromekanisk bevegelsessensor, og en mikromekanisk bevelgelsessensor

Country Status (10)

Country Link
US (1) US7682861B2 (fi)
EP (1) EP1891668A1 (fi)
JP (1) JP2008544513A (fi)
KR (1) KR20080031282A (fi)
CN (1) CN101199047A (fi)
CA (1) CA2612283A1 (fi)
FI (1) FI119307B (fi)
IL (1) IL187939A0 (fi)
NO (1) NO20080337L (fi)
WO (1) WO2006134233A1 (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8322216B2 (en) * 2009-09-22 2012-12-04 Duli Yu Micromachined accelerometer with monolithic electrodes and method of making the same
CN109634036B (zh) * 2017-10-09 2022-02-18 中强光电股份有限公司 投影装置及其照明系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758824A (en) * 1985-08-22 1988-07-19 Heinz Jurgen Bernhard Fechner Alarm for a blind
GB2198231B (en) * 1986-11-28 1990-06-06 Stc Plc Rotational motion sensor
US4926695A (en) * 1987-09-15 1990-05-22 Rosemount Inc. Rocking beam vortex sensor
US5022269A (en) * 1989-12-26 1991-06-11 Lew Hyok S Resonance frequency position sensor
JPH06331649A (ja) * 1993-05-18 1994-12-02 Murata Mfg Co Ltd 加速度センサおよびその製造方法
DE19541388A1 (de) * 1995-11-07 1997-05-15 Telefunken Microelectron Mikromechanischer Beschleunigungssensor
AU2001286711A1 (en) * 2000-09-13 2002-03-26 Applied Materials, Inc. Micromachined silicon block vias for transferring electrical signals to the backside of a silicon wafer
JP2002286746A (ja) * 2001-03-23 2002-10-03 Tdk Corp 圧電センサの製造方法
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
KR100452818B1 (ko) * 2002-03-18 2004-10-15 삼성전기주식회사 칩 패키지 및 그 제조방법
US6829937B2 (en) * 2002-06-17 2004-12-14 Vti Holding Oy Monolithic silicon acceleration sensor

Also Published As

Publication number Publication date
WO2006134233A1 (en) 2006-12-21
FI20055324A0 (fi) 2005-06-17
CA2612283A1 (en) 2006-12-21
WO2006134233A9 (en) 2007-10-25
IL187939A0 (en) 2008-03-20
JP2008544513A (ja) 2008-12-04
US7682861B2 (en) 2010-03-23
EP1891668A1 (en) 2008-02-27
FI20055324A (fi) 2007-03-01
US20070012108A1 (en) 2007-01-18
FI119307B (fi) 2008-09-30
CN101199047A (zh) 2008-06-11
KR20080031282A (ko) 2008-04-08

Similar Documents

Publication Publication Date Title
FI20055618A0 (fi) Menetelmä mikroelektromekaanisen komponentin valmistamiseksi ja mikromekaaninen komponentti
NO20073688L (no) Oscillerende mikromekanisk vinkelhastighetssensor
ATE500928T1 (de) Datenverarbeitungsverfahren zur bewegungserfassung einer gelenkstruktur
WO2010110989A3 (en) Vertically integrated mems acceleration transducer
WO2007062179A3 (en) Method of determining the shape of a bendable instrument
WO2008010097A3 (en) Method and apparatus for estimating a motion parameter
WO2008127849A3 (en) Multi-axis micromachined accelerometer and rate sensor
WO2009147062A3 (de) Detektionssystem zur annäherungserkennung
WO2007010034A3 (de) Ampholytisches copolymer, dessen herstellung und verwendung
RU2008140739A (ru) Система определения ориентации на основе датчиков
WO2009013666A3 (en) Multi-axial sensor for determining displacement, velocity and acceleration of a linear or angular movement
WO2007143520A3 (en) Composite mechanical transducers and approaches therefor
WO2010056435A3 (en) Transducer with decoupled sensing in mutually orthogonal directions
WO2010057098A3 (en) High temperature transducer using soi electronics
WO2008051677A3 (en) Dual axis rate sensor
WO2010151054A3 (ko) 가상 세계 처리 장치 및 방법
FR2898884B1 (fr) Micro-capteur inertiel resonant a epaisseur variable realise en technologies de surface
ATE514921T1 (de) Mikromechanischer drehratensensor
ATE528630T1 (de) Verfahren und system zur adaptiven kompensation des temperaturdriftens eines sensors
WO2011049601A3 (en) Piezoelectric coagulation sensors
WO2007017766A3 (en) Method of manufacturing an optical system
WO2009047120A3 (de) Beschleunigungssensor
ATE511095T1 (de) Mikromechanischer beschleunigungssensor
WO2008051781A3 (en) Vertically integrated mems
WO2007147643A3 (de) Nanomikrofon bzw. -drucksensor

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application