NO20075032L - Fremgangsmate for fremstilling av silisium med hoy renhet - Google Patents

Fremgangsmate for fremstilling av silisium med hoy renhet

Info

Publication number
NO20075032L
NO20075032L NO20075032A NO20075032A NO20075032L NO 20075032 L NO20075032 L NO 20075032L NO 20075032 A NO20075032 A NO 20075032A NO 20075032 A NO20075032 A NO 20075032A NO 20075032 L NO20075032 L NO 20075032L
Authority
NO
Norway
Prior art keywords
high purity
producing high
purity silicon
slag
silicon
Prior art date
Application number
NO20075032A
Other languages
English (en)
Inventor
Jiro Kondo
Masaki Okajima
Kensuke Okazawa
Nobuaki Ito
Original Assignee
Nippon Steel Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Materials Co Ltd filed Critical Nippon Steel Materials Co Ltd
Publication of NO20075032L publication Critical patent/NO20075032L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

En gjenstand for oppfinnelsen er å tilveiebringe en fremgangsmåte for fremstilling av en stor mengde av et rimelig og meget rent silisium som kan benyttes i et solarbatteri. Fremgangsmåten inkluderer å tilveiebringe smeltet silisium, å tilveiebringe et slagg, å bringe det smeltede silisium og slagget i kontakt med hverandre og å eksponere slagget til et undertrykk.
NO20075032A 2005-03-07 2007-10-04 Fremgangsmate for fremstilling av silisium med hoy renhet NO20075032L (no)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005062560 2005-03-07
JP2006034362A JP4856973B2 (ja) 2005-03-07 2006-02-10 高純度シリコンの製造方法
PCT/JP2006/304201 WO2006095665A1 (en) 2005-03-07 2006-02-28 Method for producing high purity silicon

Publications (1)

Publication Number Publication Date
NO20075032L true NO20075032L (no) 2007-10-08

Family

ID=36568722

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075032A NO20075032L (no) 2005-03-07 2007-10-04 Fremgangsmate for fremstilling av silisium med hoy renhet

Country Status (7)

Country Link
US (1) US20080311020A1 (no)
EP (1) EP1871710A1 (no)
JP (1) JP4856973B2 (no)
KR (1) KR20070116858A (no)
BR (1) BRPI0608572A2 (no)
NO (1) NO20075032L (no)
WO (1) WO2006095665A1 (no)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4741860B2 (ja) * 2005-03-07 2011-08-10 新日鉄マテリアルズ株式会社 高純度のシリコンの製造方法
US7682585B2 (en) 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
FR2950046B1 (fr) * 2009-09-15 2011-11-25 Apollon Solar Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification
TWI393805B (zh) 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
TWI403461B (zh) 2010-07-21 2013-08-01 Masahiro Hoshino Method and apparatus for improving yield and yield of metallurgical silicon
CN102742034B (zh) * 2010-08-16 2015-10-14 星野政宏 冶金硅的提纯方法
US20130189633A1 (en) * 2012-01-19 2013-07-25 General Electric Company Method for removing organic contaminants from boron containing powders by high temperature processing
TWI499558B (zh) * 2012-08-31 2015-09-11 Silicor Materials Inc 在定向凝固期間以反應蓋玻璃覆蓋熔融矽
RU2671357C1 (ru) * 2017-12-25 2018-10-30 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Способ очистки технического кремния
CN112320793B (zh) * 2020-10-22 2022-04-05 中钢新型材料股份有限公司 一种用于半导体级SiC粉体合成的高纯石墨粉的制备工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2933164A1 (de) * 1979-08-16 1981-02-26 Consortium Elektrochem Ind Verfahren zum reinigen von rohsilicium
US4388286A (en) * 1982-01-27 1983-06-14 Atlantic Richfield Company Silicon purification
JPS60106943A (ja) * 1983-11-15 1985-06-12 Showa Denko Kk ステンレス鋼の製造方法
SE460287B (sv) * 1987-09-15 1989-09-25 Casco Nobel Ab Foerfarande foer rening av kisel fraan bor
JPH07206420A (ja) * 1994-01-10 1995-08-08 Showa Alum Corp 高純度ケイ素の製造方法
US6368403B1 (en) * 1997-08-28 2002-04-09 Crystal Systems, Inc. Method and apparatus for purifying silicon
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon

Also Published As

Publication number Publication date
JP4856973B2 (ja) 2012-01-18
KR20070116858A (ko) 2007-12-11
WO2006095665A1 (en) 2006-09-14
JP2006282499A (ja) 2006-10-19
US20080311020A1 (en) 2008-12-18
EP1871710A1 (en) 2008-01-02
BRPI0608572A2 (pt) 2010-01-12

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