NO20073885L - Tynnfilmer fremstilt med gassfaseavleiringsteknikk - Google Patents

Tynnfilmer fremstilt med gassfaseavleiringsteknikk

Info

Publication number
NO20073885L
NO20073885L NO20073885A NO20073885A NO20073885L NO 20073885 L NO20073885 L NO 20073885L NO 20073885 A NO20073885 A NO 20073885A NO 20073885 A NO20073885 A NO 20073885A NO 20073885 L NO20073885 L NO 20073885L
Authority
NO
Norway
Prior art keywords
thin films
phase deposition
deposition technique
sensor
gas phase
Prior art date
Application number
NO20073885A
Other languages
English (en)
Other versions
NO343742B1 (no
Inventor
Helmer Fjellvag
Ola Nilsen
Original Assignee
Uni I Oslo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO20045674A external-priority patent/NO20045674D0/no
Application filed by Uni I Oslo filed Critical Uni I Oslo
Priority to NO20073885A priority Critical patent/NO343742B1/no
Publication of NO20073885L publication Critical patent/NO20073885L/no
Publication of NO343742B1 publication Critical patent/NO343742B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Fremgangsmåte for fremstilling av tynnfilm med en organisk-uorganisk struktur omfattende dyrkning ved en fast fase deponeringsteknikk fortrinnsvis ALCVD (atomersjikt kjemisk dampdeponering) teknikk. Som et eksempel er trimetylaluminium (TMA), hydroquinon (Hq) og floroglusinol (Phl) blitt anvendt som forløpere for fremstilling av tynnfilm av aluminiumbenzenoksider konstruerende en hybridtypefilm. Ytterligere tynnfilmer med en hybridstruktur er beskrevet. Disse filmer kan anvendes som et optisk materiale, en trykksensor, en gassensor, en temperatursensor, en magnetisk feltsensor, elektrisk feltsensor, et piezoelektrisk materiale, et magnetisk materiale, et halvledende materiale eller som et elektrisk isolerende materiale.
NO20073885A 2004-12-28 2007-07-24 Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk NO343742B1 (no)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NO20073885A NO343742B1 (no) 2004-12-28 2007-07-24 Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20045674A NO20045674D0 (no) 2004-12-28 2004-12-28 Thin films prepared with gas phase deposition technique
PCT/NO2005/000488 WO2006071126A1 (en) 2004-12-28 2005-12-28 Thin films prepared with gas phase deposition technique
NO20073885A NO343742B1 (no) 2004-12-28 2007-07-24 Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk

Publications (2)

Publication Number Publication Date
NO20073885L true NO20073885L (no) 2007-09-26
NO343742B1 NO343742B1 (no) 2019-05-27

Family

ID=38792405

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20073885A NO343742B1 (no) 2004-12-28 2007-07-24 Fremgangsmåte for fremstilling av tynnfilm ved gassfasedeponeringsteknikk

Country Status (1)

Country Link
NO (1) NO343742B1 (no)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001021850A (ja) * 1999-07-06 2001-01-26 Sony Corp 固体変位素子、光学素子及び干渉フィルター
KR100421219B1 (ko) * 2001-06-14 2004-03-02 삼성전자주식회사 β-디케톤 리간드를 갖는 유기 금속 착물을 이용한 원자층증착방법

Also Published As

Publication number Publication date
NO343742B1 (no) 2019-05-27

Similar Documents

Publication Publication Date Title
Iqbal et al. Reactive sputtering of aluminum nitride (002) thin films for piezoelectric applications: A review
Zhang et al. How the structures and properties of two-dimensional layered perovskites MAPbI3 and CsPbI3 vary with the number of layers
US9067795B2 (en) Method for making graphene composite structure
Shi et al. Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition
Baettig et al. Anti-polarity in ideal BiMnO3
KR102014321B1 (ko) 혼합 금속 산화물 장벽 막을 제조하기 위한 혼합 금속 산화물 장벽 막 및 원자 층 증착 방법
WO2008139860A1 (ja) 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
TW200505280A (en) Manufacturing method and manufacturing apparatus of organic thin film
US8859044B2 (en) Method of preparing graphene layer
TW200628619A (en) Vacuum coating system
KR20110084110A (ko) 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도
JP2010067957A (ja) フレキシブル電子デバイスに適用される基板構造およびその作製方法
WO2012031238A3 (en) Uniform multilayer graphene by chemical vapor deposition
CN107264003A (zh) 基材膜的制造方法
US9281420B2 (en) Chemical vapor deposited film formed by plasma CVD method
Yasuoka et al. Tunable ferroelectric properties in wurtzite (Al0. 8Sc0. 2) N via crystal anisotropy
Kim et al. A thin film encapsulation layer fabricated via initiated chemical vapor deposition and atomic layer deposition
Kim et al. Optimizing crack onset strain for silicon nitride/fluoropolymer nanolaminate barrier films
Jung et al. Effects of Ar addition to O2 plasma on plasma-enhanced atomic layer deposition of oxide thin films
CN105874098B (zh) 连续式成膜装置的成膜准备方法和连续式成膜装置以及搬运器
JP2011228688A5 (no)
EP2070601A3 (en) Low dielectric constant plasma polymerized thin film and manufacturing method thereof
NO20073885L (no) Tynnfilmer fremstilt med gassfaseavleiringsteknikk
Uusi-Esko et al. Atomic layer deposition of hexagonal and orthorhombic YMnO3 thin films
DE10345824A1 (de) Anordnung zur Abscheidung von atomaren Schichten auf Substraten