NO20042873L - Ladnings- eller partikkelavfoling - Google Patents

Ladnings- eller partikkelavfoling

Info

Publication number
NO20042873L
NO20042873L NO20042873A NO20042873A NO20042873L NO 20042873 L NO20042873 L NO 20042873L NO 20042873 A NO20042873 A NO 20042873A NO 20042873 A NO20042873 A NO 20042873A NO 20042873 L NO20042873 L NO 20042873L
Authority
NO
Norway
Prior art keywords
charge
particle decay
decay
particle
Prior art date
Application number
NO20042873A
Other languages
English (en)
Norwegian (no)
Inventor
Pierre Jarron
Original Assignee
Europ Org For Nuclear Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Org For Nuclear Research filed Critical Europ Org For Nuclear Research
Publication of NO20042873L publication Critical patent/NO20042873L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/162—FETs are biased in the weak inversion region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/357—Indexing scheme relating to amplifiers the amplifier comprising MOS which are biased in the weak inversion region

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Amplifiers (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Current Or Voltage (AREA)
NO20042873A 2002-01-21 2004-07-07 Ladnings- eller partikkelavfoling NO20042873L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0201260.7A GB0201260D0 (en) 2002-01-21 2002-01-21 A sensing and imaging device
PCT/EP2003/000603 WO2003061277A2 (en) 2002-01-21 2003-01-20 Charge or particle sensing

Publications (1)

Publication Number Publication Date
NO20042873L true NO20042873L (no) 2004-09-08

Family

ID=9929417

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20042873A NO20042873L (no) 2002-01-21 2004-07-07 Ladnings- eller partikkelavfoling

Country Status (11)

Country Link
US (1) US7183555B2 (de)
EP (1) EP1468488A2 (de)
JP (1) JP2005515450A (de)
KR (1) KR100993529B1 (de)
CN (1) CN1630979A (de)
AU (1) AU2003235605A1 (de)
CA (1) CA2473619A1 (de)
GB (1) GB0201260D0 (de)
NO (1) NO20042873L (de)
RU (1) RU2339973C2 (de)
WO (1) WO2003061277A2 (de)

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ATE458995T1 (de) * 2005-01-06 2010-03-15 Koninkl Philips Electronics Nv Pixel-realisierter stromverstärker
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WO2008106764A1 (en) * 2007-03-05 2008-09-12 Arokia Nathan Sensor pixels, arrays and array systems and methods therefor
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US7969476B1 (en) * 2007-05-24 2011-06-28 Advasense Technologies Ltd. Method for accessing a pixel and a device having pixel access capabilities
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US9330892B2 (en) 2009-12-31 2016-05-03 Spectro Analytical Instruments Gmbh Simultaneous inorganic mass spectrometer and method of inorganic mass spectrometry
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RU2578252C2 (ru) * 2011-01-17 2016-03-27 Конинклейке Филипс Электроникс Н.В. Пиксель детектора со счетом фотонов, который имеет анод, содержащий два или более поочередно выбираемых и раздельных под-анода
CN102175908B (zh) * 2011-01-27 2014-02-26 无锡硅动力微电子股份有限公司 利用功率管布线寄生电阻实现电流检测的方法
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RU2594606C2 (ru) * 2011-08-30 2016-08-20 Конинклейке Филипс Н.В. Детектор счета фотонов
KR101809542B1 (ko) 2011-12-26 2017-12-18 삼성전자주식회사 스위칭 회로, 이를 포함하는 전하량 검출 증폭기 및 광자 계수 검출 장치
US8736008B2 (en) 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
KR101359352B1 (ko) * 2012-06-28 2014-02-21 한국과학기술원 시각신경 회로장치 및 이를 이용한 시각신경 모방 시스템
JP6219282B2 (ja) 2012-08-02 2017-10-25 株式会社堀場製作所 増幅器及び放射線検出器
EP2778715A1 (de) * 2013-03-14 2014-09-17 Agfa Healthcare Pixeleinheit für eine Röntgenbilderkennungsvorrichtung
RU2517682C1 (ru) * 2013-04-08 2014-05-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") Быстродействующий датчик физических величин с потенциальным выходом
RU2534758C1 (ru) * 2013-04-09 2014-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВО "ЮРГУЭС") Трансрезистивный усилитель с парафазным выходом для преобразования сигналов лавинных фотодиодов
JP6325650B2 (ja) 2013-04-24 2018-05-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 光検出器画素アレイを有する放射線検出装置、ｐｅｔ撮像システム、光フォトン加算方法、及び光フォトン加算方法のステップを実行するためのコンピュータプログラム
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WO2015069566A1 (en) * 2013-11-05 2015-05-14 Arizona Board Of Regents For And On Behalf Of Arizona State University Adaptive detection sensor array and method of providing and using the same
US20160003672A1 (en) * 2014-07-25 2016-01-07 Varun Verma Multiplexer for single photon detector, process for making and use of same
EP3235000B1 (de) * 2014-12-19 2021-01-13 G-ray Switzerland SA Verfahren zur herstellung eines monolithischen, cmos-integrierten pixeldetektors
US10502622B2 (en) * 2016-06-30 2019-12-10 U.S.A. As Represented By The Administrator Of The National Aeronautics And Space Administration Detector control and data acquisition with custom application specific integrated circuit (ASIC)
EP3532873B1 (de) * 2016-10-27 2021-06-23 Shenzhen Xpectvision Technology Co., Ltd. Dunkelrauschkompensation bei einem strahlungsdetektor
WO2019233991A1 (en) * 2018-06-08 2019-12-12 Asml Netherlands B.V. Semiconductor charged particle detector for microscopy
US11108981B2 (en) * 2018-09-03 2021-08-31 Fermi Research Alliance, Llc Compact, low power, high resolution ADC per pixel for large area pixel detectors
JP2020112495A (ja) 2019-01-15 2020-07-27 ソニーセミコンダクタソリューションズ株式会社 受光装置および測距装置
JP2020153712A (ja) * 2019-03-18 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 電流生成回路および測距システム
DE112021005769T5 (de) * 2020-12-09 2023-08-17 Ams International Ag Elektronische front-end-schaltung für eine photonenzählanwendung
US11977404B2 (en) * 2022-02-28 2024-05-07 Texas Instruments Incorporated Fast startup power regulator circuitry

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Also Published As

Publication number Publication date
GB0201260D0 (en) 2002-03-06
RU2004125149A (ru) 2006-02-10
WO2003061277A2 (en) 2003-07-24
KR20040096527A (ko) 2004-11-16
AU2003235605A8 (en) 2003-07-30
KR100993529B1 (ko) 2010-11-11
AU2003235605A1 (en) 2003-07-30
US20050104003A1 (en) 2005-05-19
WO2003061277A3 (en) 2004-05-06
US7183555B2 (en) 2007-02-27
RU2339973C2 (ru) 2008-11-27
EP1468488A2 (de) 2004-10-20
CA2473619A1 (en) 2003-07-24
CN1630979A (zh) 2005-06-22
JP2005515450A (ja) 2005-05-26

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FC2A Withdrawal, rejection or dismissal of laid open patent application