NO159650C - Fremgangsm te til fremstilling av krysytallinsk silg anvendelse av dette for fremstilling av solarceller. - Google Patents

Fremgangsm te til fremstilling av krysytallinsk silg anvendelse av dette for fremstilling av solarceller.

Info

Publication number
NO159650C
NO159650C NO840890A NO840890A NO159650C NO 159650 C NO159650 C NO 159650C NO 840890 A NO840890 A NO 840890A NO 840890 A NO840890 A NO 840890A NO 159650 C NO159650 C NO 159650C
Authority
NO
Norway
Prior art keywords
preparation
silg
crystally
procedure
solar cells
Prior art date
Application number
NO840890A
Other languages
English (en)
Other versions
NO840890L (no
NO159650B (no
Inventor
Peter Woditsch
Martin Abels
Berthold Brazel
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of NO840890L publication Critical patent/NO840890L/no
Publication of NO159650B publication Critical patent/NO159650B/no
Publication of NO159650C publication Critical patent/NO159650C/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Polymers (AREA)
NO840890A 1983-03-24 1984-03-08 Fremgangsm te til fremstilling av krysytallinsk silg anvendelse av dette for fremstilling av solarceller. NO159650C (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19833310828 DE3310828A1 (de) 1983-03-24 1983-03-24 Verfahren zur herstellung von silicium

Publications (3)

Publication Number Publication Date
NO840890L NO840890L (no) 1984-09-25
NO159650B NO159650B (no) 1988-10-17
NO159650C true NO159650C (no) 1989-01-25

Family

ID=6194586

Family Applications (1)

Application Number Title Priority Date Filing Date
NO840890A NO159650C (no) 1983-03-24 1984-03-08 Fremgangsm te til fremstilling av krysytallinsk silg anvendelse av dette for fremstilling av solarceller.

Country Status (8)

Country Link
US (1) US4525334A (no)
EP (1) EP0123100B1 (no)
JP (1) JPS59182221A (no)
AU (1) AU559870B2 (no)
CA (1) CA1228220A (no)
DE (2) DE3310828A1 (no)
NO (1) NO159650C (no)
ZA (1) ZA842163B (no)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585951A (en) * 1983-10-24 1986-04-29 Motorola, Inc. Precision triangle waveform generator
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4820587A (en) * 1986-08-25 1989-04-11 Ethyl Corporation Polysilicon produced by a fluid bed process
DE3824065A1 (de) * 1988-07-15 1990-01-18 Bayer Ag Verfahren zur herstellung von solarsilicium
US5798137A (en) * 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
TW200704587A (en) * 2005-06-29 2007-02-01 Sumitomo Chemical Co Method for producing silicon with high purity
JP5256588B2 (ja) * 2005-06-29 2013-08-07 住友化学株式会社 高純度シリコンの製造方法
WO2007013644A1 (ja) * 2005-07-28 2007-02-01 Sumitomo Chemical Company, Limited 多結晶シリコンの製造方法
JP5194404B2 (ja) * 2005-08-19 2013-05-08 住友化学株式会社 珪素の製造方法
CN101243014B (zh) * 2005-08-19 2011-09-07 住友化学株式会社 硅的制备方法
JP4911488B2 (ja) * 2005-09-26 2012-04-04 国立大学法人 東京大学 多結晶シリコンの製造方法
US8173094B2 (en) * 2005-12-27 2012-05-08 Sumitomo Chemical Company, Limited Method for producing polycrystalline silicon
CN101426722B (zh) * 2006-03-15 2013-06-05 反应科学公司 制造用于太阳能电池及其它应用的硅的方法
JP2007284259A (ja) * 2006-04-12 2007-11-01 Shin Etsu Chem Co Ltd シリコンの製造方法及び製造装置
US8303796B2 (en) 2006-05-26 2012-11-06 Sumitomo Chemical Company, Limited Method for producing silicon
KR100861104B1 (ko) * 2006-10-16 2008-09-30 킹스정보통신(주) 유에스비 키보드의 보안장치 및 그 방법
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
WO2010037694A2 (de) 2008-09-30 2010-04-08 Evonik Degussa Gmbh Herstellung von solar-silicium aus siliciumdioxid
CN102245506B (zh) 2008-12-10 2014-06-11 独立行政法人物质·材料研究机构 硅的制造方法
JP5471450B2 (ja) * 2010-01-05 2014-04-16 住友化学株式会社 シリコンの製造方法
DE102010044755A1 (de) * 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
CN103172070B (zh) * 2013-04-16 2014-10-29 中国科学院青海盐湖研究所 一种多晶硅的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172883A (en) * 1978-06-23 1979-10-30 Nasa Method of purifying metallurgical grade silicon employing reduced presure atmospheric control
US4243639A (en) * 1979-05-10 1981-01-06 Tosco Corporation Method for recovering vanadium from petroleum coke
JPS5711815A (en) * 1980-06-24 1982-01-21 Onoda Cement Co Ltd Preparation of high purity silicon

Also Published As

Publication number Publication date
DE3310828A1 (de) 1984-09-27
EP0123100B1 (de) 1986-12-03
AU2591284A (en) 1984-09-27
NO840890L (no) 1984-09-25
NO159650B (no) 1988-10-17
JPS59182221A (ja) 1984-10-17
ZA842163B (en) 1984-10-31
US4525334A (en) 1985-06-25
CA1228220A (en) 1987-10-20
DE3461523D1 (en) 1987-01-15
EP0123100A1 (de) 1984-10-31
AU559870B2 (en) 1987-03-19

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