NO125255B - - Google Patents
Download PDFInfo
- Publication number
- NO125255B NO125255B NO120571A NO120571A NO125255B NO 125255 B NO125255 B NO 125255B NO 120571 A NO120571 A NO 120571A NO 120571 A NO120571 A NO 120571A NO 125255 B NO125255 B NO 125255B
- Authority
- NO
- Norway
- Prior art keywords
- substrate
- layer
- polycrystalline
- semiconductor device
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 230000007704 transition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 13
- 239000000356 contaminant Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO120571A NO125255B (https=) | 1967-11-14 | 1971-03-31 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7315567 | 1967-11-14 | ||
| JP8205367 | 1967-12-21 | ||
| NO4492/68A NO123436B (https=) | 1967-11-14 | 1968-11-13 | |
| NO120571A NO125255B (https=) | 1967-11-14 | 1971-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO125255B true NO125255B (https=) | 1972-08-07 |
Family
ID=27465549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO120571A NO125255B (https=) | 1967-11-14 | 1971-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| NO (1) | NO125255B (https=) |
-
1971
- 1971-03-31 NO NO120571A patent/NO125255B/no unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Patton et al. | Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors | |
| US3997368A (en) | Elimination of stacking faults in silicon devices: a gettering process | |
| GB1047388A (https=) | ||
| GB1206308A (en) | Method of making semiconductor wafer | |
| GB1050478A (https=) | ||
| GB1250377A (https=) | ||
| Heiman | DONOR SURFACE STATES AND BULK ACCEPTOR TRAPS IN SILICON‐ON‐SAPPHIRE FILMS | |
| NO125255B (https=) | ||
| Civale et al. | Sub-500/spl deg/C solid-phase epitaxy of ultra-abrupt p/sup+/-silicon elevated contacts and diodes | |
| JP7314772B2 (ja) | 受光素子とその製造方法 | |
| CN105990254A (zh) | BiCMOS集成电路的制造方法 | |
| SE438217B (sv) | N-kanal-minne med ett flertal mos-element innefattande ett epitaxskikt pa ett halvledarsubstrat | |
| JPH0314228B2 (https=) | ||
| JPS5834943A (ja) | 半導体装置の製造方法 | |
| JPS5856432A (ja) | 半導体装置の製造法 | |
| JP2518378B2 (ja) | 半導体装置の製造方法 | |
| KR930009471B1 (ko) | 다결정 실리콘을 사용한 바이폴라 트랜지스터 제조방법 | |
| CN108400114A (zh) | 一种双极性线路板的制作工艺 | |
| ES364975A1 (es) | Un dispositivo semiconductor. | |
| JPH024134B2 (https=) | ||
| JPS58200553A (ja) | 半導体装置 | |
| JP3561624B2 (ja) | 半導体装置の製造方法 | |
| KR100264210B1 (ko) | 반도체장치의 활성영역 분리방법 | |
| JPS6129537B2 (https=) | ||
| KR850001439B1 (ko) | 에피택셜 성장기술에 의한 메사트랜지스터의 제작방법 |