NL98843C - - Google Patents

Info

Publication number
NL98843C
NL98843C NL98843DA NL98843C NL 98843 C NL98843 C NL 98843C NL 98843D A NL98843D A NL 98843DA NL 98843 C NL98843 C NL 98843C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL98843C publication Critical patent/NL98843C/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL98843D 1956-07-02 NL98843C (US20020095090A1-20020718-M00002.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US595503A US2904512A (en) 1956-07-02 1956-07-02 Growth of uniform composition semiconductor crystals

Publications (1)

Publication Number Publication Date
NL98843C true NL98843C (US20020095090A1-20020718-M00002.png)

Family

ID=24383491

Family Applications (2)

Application Number Title Priority Date Filing Date
NL98843D NL98843C (US20020095090A1-20020718-M00002.png) 1956-07-02
NL218610D NL218610A (US20020095090A1-20020718-M00002.png) 1956-07-02

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL218610D NL218610A (US20020095090A1-20020718-M00002.png) 1956-07-02

Country Status (5)

Country Link
US (1) US2904512A (US20020095090A1-20020718-M00002.png)
DE (1) DE1034772B (US20020095090A1-20020718-M00002.png)
FR (1) FR1180064A (US20020095090A1-20020718-M00002.png)
GB (1) GB839783A (US20020095090A1-20020718-M00002.png)
NL (2) NL218610A (US20020095090A1-20020718-M00002.png)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
DE1194158B (de) * 1958-10-04 1965-06-03 Telefunken Patent Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls, insbesondere aus Germanium, mit hoher Versetzungsdichte
NL246541A (US20020095090A1-20020718-M00002.png) * 1959-01-20
GB898872A (en) * 1959-08-14 1962-06-14 Ici Ltd Improvements in the manufacture of crystalline silicon
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
NL258297A (US20020095090A1-20020718-M00002.png) * 1959-12-03
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
US3404966A (en) * 1964-09-04 1968-10-08 Northeru Electric Company Ltd Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
DE1519867A1 (de) * 1965-02-27 1970-02-26 Siemens Ag Vorrichtung zum Zonenschmelzen im Vakuum
FR1473984A (fr) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Procédé et dispositif destinés à la fabrication de composés binaires monocristallins
US3452549A (en) * 1966-03-28 1969-07-01 Us Army Method for producing predetermined crystal structures
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
DE2338338C3 (de) * 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4270973A (en) * 1978-04-27 1981-06-02 Honeywell Inc. Growth of thallium-doped silicon from a tin-thallium solution
DE3437524A1 (de) * 1984-10-12 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
JPH0680495A (ja) * 1992-06-16 1994-03-22 Sumitomo Metal Ind Ltd 結晶成長方法
JPH06279170A (ja) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp 単結晶の製造方法及びその装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
NL88324C (US20020095090A1-20020718-M00002.png) * 1950-06-15
BE510303A (US20020095090A1-20020718-M00002.png) * 1951-11-16
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon

Also Published As

Publication number Publication date
DE1034772B (de) 1958-07-24
FR1180064A (fr) 1959-06-01
GB839783A (en) 1960-06-29
US2904512A (en) 1959-09-15
NL218610A (US20020095090A1-20020718-M00002.png)

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