NL98843C - - Google Patents
Info
- Publication number
- NL98843C NL98843C NL98843DA NL98843C NL 98843 C NL98843 C NL 98843C NL 98843D A NL98843D A NL 98843DA NL 98843 C NL98843 C NL 98843C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US595503A US2904512A (en) | 1956-07-02 | 1956-07-02 | Growth of uniform composition semiconductor crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
NL98843C true NL98843C (US20020095090A1-20020718-M00002.png) |
Family
ID=24383491
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL98843D NL98843C (US20020095090A1-20020718-M00002.png) | 1956-07-02 | ||
NL218610D NL218610A (US20020095090A1-20020718-M00002.png) | 1956-07-02 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL218610D NL218610A (US20020095090A1-20020718-M00002.png) | 1956-07-02 |
Country Status (5)
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998335A (en) * | 1956-02-04 | 1961-08-29 | Telefunken Gmbh | Method and apparatusfor growing single crystals from molten bodies |
US2981687A (en) * | 1958-04-03 | 1961-04-25 | British Thomson Houston Co Ltd | Production of mono-crystal semiconductor bodies |
DE1194158B (de) * | 1958-10-04 | 1965-06-03 | Telefunken Patent | Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls, insbesondere aus Germanium, mit hoher Versetzungsdichte |
NL246541A (US20020095090A1-20020718-M00002.png) * | 1959-01-20 | |||
GB898872A (en) * | 1959-08-14 | 1962-06-14 | Ici Ltd | Improvements in the manufacture of crystalline silicon |
US3088853A (en) * | 1959-11-17 | 1963-05-07 | Texas Instruments Inc | Method of purifying gallium by recrystallization |
NL258297A (US20020095090A1-20020718-M00002.png) * | 1959-12-03 | |||
US3058915A (en) * | 1960-01-18 | 1962-10-16 | Westinghouse Electric Corp | Crystal growing process |
US3390020A (en) * | 1964-03-17 | 1968-06-25 | Mandelkorn Joseph | Semiconductor material and method of making same |
US3404966A (en) * | 1964-09-04 | 1968-10-08 | Northeru Electric Company Ltd | Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible |
DE1519867A1 (de) * | 1965-02-27 | 1970-02-26 | Siemens Ag | Vorrichtung zum Zonenschmelzen im Vakuum |
FR1473984A (fr) * | 1966-01-10 | 1967-03-24 | Radiotechnique Coprim Rtc | Procédé et dispositif destinés à la fabrication de composés binaires monocristallins |
US3452549A (en) * | 1966-03-28 | 1969-07-01 | Us Army | Method for producing predetermined crystal structures |
US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
DE2338338C3 (de) * | 1973-07-27 | 1979-04-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
JPS5347765A (en) * | 1976-10-13 | 1978-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
US4270973A (en) * | 1978-04-27 | 1981-06-02 | Honeywell Inc. | Growth of thallium-doped silicon from a tin-thallium solution |
DE3437524A1 (de) * | 1984-10-12 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes |
US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
JPH0680495A (ja) * | 1992-06-16 | 1994-03-22 | Sumitomo Metal Ind Ltd | 結晶成長方法 |
JPH06279170A (ja) * | 1993-03-29 | 1994-10-04 | Sumitomo Sitix Corp | 単結晶の製造方法及びその装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
NL88324C (US20020095090A1-20020718-M00002.png) * | 1950-06-15 | |||
BE510303A (US20020095090A1-20020718-M00002.png) * | 1951-11-16 | |||
US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
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0
- NL NL98843D patent/NL98843C/xx active
- NL NL218610D patent/NL218610A/xx unknown
-
1956
- 1956-07-02 US US595503A patent/US2904512A/en not_active Expired - Lifetime
-
1957
- 1957-07-01 DE DEG22436A patent/DE1034772B/de active Pending
- 1957-07-01 GB GB20666/57A patent/GB839783A/en not_active Expired
- 1957-07-02 FR FR1180064D patent/FR1180064A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1034772B (de) | 1958-07-24 |
FR1180064A (fr) | 1959-06-01 |
GB839783A (en) | 1960-06-29 |
US2904512A (en) | 1959-09-15 |
NL218610A (US20020095090A1-20020718-M00002.png) |