NL8903033A - Alfa-straling ongevoelige 6 transistor cmos geheugencel. - Google Patents
Alfa-straling ongevoelige 6 transistor cmos geheugencel. Download PDFInfo
- Publication number
- NL8903033A NL8903033A NL8903033A NL8903033A NL8903033A NL 8903033 A NL8903033 A NL 8903033A NL 8903033 A NL8903033 A NL 8903033A NL 8903033 A NL8903033 A NL 8903033A NL 8903033 A NL8903033 A NL 8903033A
- Authority
- NL
- Netherlands
- Prior art keywords
- drains
- transistor
- transistors
- pmos
- nmos transistors
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000004088 simulation Methods 0.000 description 7
- 230000006399 behavior Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8903033A NL8903033A (nl) | 1989-12-11 | 1989-12-11 | Alfa-straling ongevoelige 6 transistor cmos geheugencel. |
| EP90203225A EP0432846A1 (en) | 1989-12-11 | 1990-12-07 | 6-Transistor CMOS memory cell insensitive to alpha-radiation |
| JP2409651A JPH03250762A (ja) | 1989-12-11 | 1990-12-11 | 集積半導体メモリ |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8903033A NL8903033A (nl) | 1989-12-11 | 1989-12-11 | Alfa-straling ongevoelige 6 transistor cmos geheugencel. |
| NL8903033 | 1989-12-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8903033A true NL8903033A (nl) | 1991-07-01 |
Family
ID=19855766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8903033A NL8903033A (nl) | 1989-12-11 | 1989-12-11 | Alfa-straling ongevoelige 6 transistor cmos geheugencel. |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0432846A1 (ja) |
| JP (1) | JPH03250762A (ja) |
| NL (1) | NL8903033A (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5303190A (en) * | 1992-10-27 | 1994-04-12 | Motorola, Inc. | Static random access memory resistant to soft error |
| US6111780A (en) * | 1998-06-05 | 2000-08-29 | Lockheed Martin Corporation | Radiation hardened six transistor random access memory and memory device |
| WO2000074064A1 (en) * | 1999-05-28 | 2000-12-07 | Lockheed Martin Corporation | Single event upset (seu) hardened static random access memory cell |
| WO2000074065A1 (en) | 1999-05-28 | 2000-12-07 | Lockheed Martin Corporation | Method and apparatus for hardening a static random access memory cell from single event upsets |
| EP1203450A1 (en) | 1999-07-28 | 2002-05-08 | Lockheed Martin Corporation | Enhanced single event upset immune latch circuit |
| US6369630B1 (en) | 1999-11-24 | 2002-04-09 | Bae Systems Information And Electronic Systems Integration Inc. | Single-event upset hardened reconfigurable bi-stable CMOS latch |
| US6668342B2 (en) | 2000-04-28 | 2003-12-23 | Bae Systems Information And Electronic Systems Integration, Inc. | Apparatus for a radiation hardened clock splitter |
| US6898111B2 (en) * | 2001-06-28 | 2005-05-24 | Matsushita Electric Industrial Co., Ltd. | SRAM device |
| US8189367B1 (en) | 2007-02-23 | 2012-05-29 | Bae Systems Information And Electronic Systems Integration Inc. | Single event upset hardened static random access memory cell |
| US10700046B2 (en) | 2018-08-07 | 2020-06-30 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-chip hybrid system-in-package for providing interoperability and other enhanced features to high complexity integrated circuits |
| US10854586B1 (en) | 2019-05-24 | 2020-12-01 | Bae Systems Information And Electronics Systems Integration Inc. | Multi-chip module hybrid integrated circuit with multiple power zones that provide cold spare support |
| US10990471B2 (en) | 2019-05-29 | 2021-04-27 | Bae Systems Information And Electronic Systems Integration Inc. | Apparatus and method for reducing radiation induced multiple-bit memory soft errors |
| US11342915B1 (en) | 2021-02-11 | 2022-05-24 | Bae Systems Information And Electronic Systems Integration Inc. | Cold spare tolerant radiation hardened generic level shifter circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2212681A (en) * | 1987-11-20 | 1989-07-26 | Philips Nv | Accessing memory cells |
-
1989
- 1989-12-11 NL NL8903033A patent/NL8903033A/nl not_active Application Discontinuation
-
1990
- 1990-12-07 EP EP90203225A patent/EP0432846A1/en not_active Withdrawn
- 1990-12-11 JP JP2409651A patent/JPH03250762A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03250762A (ja) | 1991-11-08 |
| EP0432846A1 (en) | 1991-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |