NL8800509A - Tweedimensionaal laser array. - Google Patents

Tweedimensionaal laser array. Download PDF

Info

Publication number
NL8800509A
NL8800509A NL8800509A NL8800509A NL8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A
Authority
NL
Netherlands
Prior art keywords
layer
shaped
active
strip
active regions
Prior art date
Application number
NL8800509A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8800509A priority Critical patent/NL8800509A/nl
Priority to DE68920457T priority patent/DE68920457T2/de
Priority to EP89200429A priority patent/EP0331235B1/fr
Priority to US07/315,010 priority patent/US4954971A/en
Priority to KR1019890002158A priority patent/KR890013841A/ko
Priority to JP1043368A priority patent/JPH01255285A/ja
Publication of NL8800509A publication Critical patent/NL8800509A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
NL8800509A 1988-02-29 1988-02-29 Tweedimensionaal laser array. NL8800509A (nl)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL8800509A NL8800509A (nl) 1988-02-29 1988-02-29 Tweedimensionaal laser array.
DE68920457T DE68920457T2 (de) 1988-02-29 1989-02-22 Zweidimensionale Laseranordnung.
EP89200429A EP0331235B1 (fr) 1988-02-29 1989-02-22 Réseau laser bidimensionnel
US07/315,010 US4954971A (en) 1988-02-29 1989-02-23 Bidimensional laser array with two groups of active regions
KR1019890002158A KR890013841A (ko) 1988-02-29 1989-02-24 2차원 레이저 장치
JP1043368A JPH01255285A (ja) 1988-02-29 1989-02-27 ２次元レーザーアレー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8800509A NL8800509A (nl) 1988-02-29 1988-02-29 Tweedimensionaal laser array.
NL8800509 1988-02-29

Publications (1)

Publication Number Publication Date
NL8800509A true NL8800509A (nl) 1989-09-18

Family

ID=19851869

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8800509A NL8800509A (nl) 1988-02-29 1988-02-29 Tweedimensionaal laser array.

Country Status (6)

Country Link
US (1) US4954971A (fr)
EP (1) EP0331235B1 (fr)
JP (1) JPH01255285A (fr)
KR (1) KR890013841A (fr)
DE (1) DE68920457T2 (fr)
NL (1) NL8800509A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
JP2001284732A (ja) * 2000-03-31 2001-10-12 Matsushita Electric Ind Co Ltd 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法
EP1146617A3 (fr) * 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Dispositif réseau laser à semiconducteur à haute puissance
EP1143584A3 (fr) * 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Réseau laser à semiconducteur
JP4019285B2 (ja) * 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法
JP4019284B2 (ja) * 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783082A (en) * 1980-11-11 1982-05-24 Nippon Telegr & Teleph Corp <Ntt> Two wave length semiconductor laser device
US4627065A (en) * 1983-06-10 1986-12-02 At&T Bell Laboratories Double active layer semiconductor laser
US4641311A (en) * 1983-12-20 1987-02-03 Rca Corporation Phase-locked semiconductor laser array with integral phase shifters
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
JPS61135186A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体レ−ザ
US4803691A (en) * 1985-05-07 1989-02-07 Spectra Diode Laboratories, Inc. Lateral superradiance suppressing diode laser bar
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
JPS6235689A (ja) * 1985-08-09 1987-02-16 Sharp Corp 半導体レ−ザアレイ装置
JPH07107948B2 (ja) * 1985-12-12 1995-11-15 ゼロツクス コ−ポレ−シヨン 非コ−ヒレントな光非結合レ−ザアレイ
JPS62272580A (ja) * 1986-05-20 1987-11-26 Oki Electric Ind Co Ltd 半導体レ−ザ

Also Published As

Publication number Publication date
EP0331235A1 (fr) 1989-09-06
US4954971A (en) 1990-09-04
JPH01255285A (ja) 1989-10-12
EP0331235B1 (fr) 1995-01-11
KR890013841A (ko) 1989-09-26
DE68920457T2 (de) 1995-08-24
DE68920457D1 (de) 1995-02-23

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BV The patent application has lapsed