NL8800509A - Tweedimensionaal laser array. - Google Patents
Tweedimensionaal laser array. Download PDFInfo
- Publication number
- NL8800509A NL8800509A NL8800509A NL8800509A NL8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A NL 8800509 A NL8800509 A NL 8800509A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- shaped
- active
- strip
- active regions
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8800509A NL8800509A (nl) | 1988-02-29 | 1988-02-29 | Tweedimensionaal laser array. |
EP89200429A EP0331235B1 (fr) | 1988-02-29 | 1989-02-22 | Réseau laser bidimensionnel |
DE68920457T DE68920457T2 (de) | 1988-02-29 | 1989-02-22 | Zweidimensionale Laseranordnung. |
US07/315,010 US4954971A (en) | 1988-02-29 | 1989-02-23 | Bidimensional laser array with two groups of active regions |
KR1019890002158A KR890013841A (ko) | 1988-02-29 | 1989-02-24 | 2차원 레이저 장치 |
JP1043368A JPH01255285A (ja) | 1988-02-29 | 1989-02-27 | 2次元レーザーアレー |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8800509A NL8800509A (nl) | 1988-02-29 | 1988-02-29 | Tweedimensionaal laser array. |
NL8800509 | 1988-02-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8800509A true NL8800509A (nl) | 1989-09-18 |
Family
ID=19851869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8800509A NL8800509A (nl) | 1988-02-29 | 1988-02-29 | Tweedimensionaal laser array. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4954971A (fr) |
EP (1) | EP0331235B1 (fr) |
JP (1) | JPH01255285A (fr) |
KR (1) | KR890013841A (fr) |
DE (1) | DE68920457T2 (fr) |
NL (1) | NL8800509A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5134323A (en) * | 1990-08-03 | 1992-07-28 | Congdon James E | Three terminal noninverting transistor switch |
JP2001284732A (ja) * | 2000-03-31 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法 |
EP1143584A3 (fr) | 2000-03-31 | 2003-04-23 | Matsushita Electric Industrial Co., Ltd. | Réseau laser à semiconducteur |
EP1146617A3 (fr) * | 2000-03-31 | 2003-04-23 | Matsushita Electric Industrial Co., Ltd. | Dispositif réseau laser à semiconducteur à haute puissance |
JP4019285B2 (ja) * | 2005-02-04 | 2007-12-12 | セイコーエプソン株式会社 | 面発光型装置及びその製造方法 |
JP4019284B2 (ja) * | 2005-02-04 | 2007-12-12 | セイコーエプソン株式会社 | 面発光型装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5783082A (en) * | 1980-11-11 | 1982-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Two wave length semiconductor laser device |
US4627065A (en) * | 1983-06-10 | 1986-12-02 | At&T Bell Laboratories | Double active layer semiconductor laser |
US4641311A (en) * | 1983-12-20 | 1987-02-03 | Rca Corporation | Phase-locked semiconductor laser array with integral phase shifters |
JPS6167286A (ja) * | 1984-09-07 | 1986-04-07 | Sharp Corp | 半導体レ−ザアレイ素子 |
JPS61135186A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体レ−ザ |
US4803691A (en) * | 1985-05-07 | 1989-02-07 | Spectra Diode Laboratories, Inc. | Lateral superradiance suppressing diode laser bar |
GB8518353D0 (en) * | 1985-07-20 | 1985-08-29 | Plessey Co Plc | Heterostructure device |
JPS6235689A (ja) * | 1985-08-09 | 1987-02-16 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPH07107948B2 (ja) * | 1985-12-12 | 1995-11-15 | ゼロツクス コ−ポレ−シヨン | 非コ−ヒレントな光非結合レ−ザアレイ |
JPS62272580A (ja) * | 1986-05-20 | 1987-11-26 | Oki Electric Ind Co Ltd | 半導体レ−ザ |
-
1988
- 1988-02-29 NL NL8800509A patent/NL8800509A/nl not_active Application Discontinuation
-
1989
- 1989-02-22 EP EP89200429A patent/EP0331235B1/fr not_active Expired - Lifetime
- 1989-02-22 DE DE68920457T patent/DE68920457T2/de not_active Expired - Fee Related
- 1989-02-23 US US07/315,010 patent/US4954971A/en not_active Expired - Fee Related
- 1989-02-24 KR KR1019890002158A patent/KR890013841A/ko not_active Application Discontinuation
- 1989-02-27 JP JP1043368A patent/JPH01255285A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0331235B1 (fr) | 1995-01-11 |
KR890013841A (ko) | 1989-09-26 |
DE68920457T2 (de) | 1995-08-24 |
US4954971A (en) | 1990-09-04 |
DE68920457D1 (de) | 1995-02-23 |
EP0331235A1 (fr) | 1989-09-06 |
JPH01255285A (ja) | 1989-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |