DE68920457T2 - Zweidimensionale Laseranordnung. - Google Patents

Zweidimensionale Laseranordnung.

Info

Publication number
DE68920457T2
DE68920457T2 DE68920457T DE68920457T DE68920457T2 DE 68920457 T2 DE68920457 T2 DE 68920457T2 DE 68920457 T DE68920457 T DE 68920457T DE 68920457 T DE68920457 T DE 68920457T DE 68920457 T2 DE68920457 T2 DE 68920457T2
Authority
DE
Germany
Prior art keywords
dimensional laser
laser arrangement
arrangement
dimensional
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68920457T
Other languages
English (en)
Other versions
DE68920457D1 (de
Inventor
Jan Opschoor
Der Poel Carolus Johannes Van
T Blik Henri Frederik Joze Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE68920457D1 publication Critical patent/DE68920457D1/de
Publication of DE68920457T2 publication Critical patent/DE68920457T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE68920457T 1988-02-29 1989-02-22 Zweidimensionale Laseranordnung. Expired - Fee Related DE68920457T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8800509A NL8800509A (nl) 1988-02-29 1988-02-29 Tweedimensionaal laser array.

Publications (2)

Publication Number Publication Date
DE68920457D1 DE68920457D1 (de) 1995-02-23
DE68920457T2 true DE68920457T2 (de) 1995-08-24

Family

ID=19851869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68920457T Expired - Fee Related DE68920457T2 (de) 1988-02-29 1989-02-22 Zweidimensionale Laseranordnung.

Country Status (6)

Country Link
US (1) US4954971A (de)
EP (1) EP0331235B1 (de)
JP (1) JPH01255285A (de)
KR (1) KR890013841A (de)
DE (1) DE68920457T2 (de)
NL (1) NL8800509A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134323A (en) * 1990-08-03 1992-07-28 Congdon James E Three terminal noninverting transistor switch
JP2001284732A (ja) * 2000-03-31 2001-10-12 Matsushita Electric Ind Co Ltd 多波長レーザ発光装置、当該装置に用いられる半導体レーザアレイ素子及び当該半導体レーザアレイ素子の製造方法
EP1143584A3 (de) 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Vielfachhalbleiterlaser
EP1146617A3 (de) * 2000-03-31 2003-04-23 Matsushita Electric Industrial Co., Ltd. Hochleistungsvielfachhalbleiterlaservorrichtung
JP4019285B2 (ja) * 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法
JP4019284B2 (ja) * 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783082A (en) * 1980-11-11 1982-05-24 Nippon Telegr & Teleph Corp <Ntt> Two wave length semiconductor laser device
US4627065A (en) * 1983-06-10 1986-12-02 At&T Bell Laboratories Double active layer semiconductor laser
US4641311A (en) * 1983-12-20 1987-02-03 Rca Corporation Phase-locked semiconductor laser array with integral phase shifters
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
JPS61135186A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体レ−ザ
US4803691A (en) * 1985-05-07 1989-02-07 Spectra Diode Laboratories, Inc. Lateral superradiance suppressing diode laser bar
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
JPS6235689A (ja) * 1985-08-09 1987-02-16 Sharp Corp 半導体レ−ザアレイ装置
JPH07107948B2 (ja) * 1985-12-12 1995-11-15 ゼロツクス コ−ポレ−シヨン 非コ−ヒレントな光非結合レ−ザアレイ
JPS62272580A (ja) * 1986-05-20 1987-11-26 Oki Electric Ind Co Ltd 半導体レ−ザ

Also Published As

Publication number Publication date
EP0331235A1 (de) 1989-09-06
US4954971A (en) 1990-09-04
NL8800509A (nl) 1989-09-18
JPH01255285A (ja) 1989-10-12
DE68920457D1 (de) 1995-02-23
EP0331235B1 (de) 1995-01-11
KR890013841A (ko) 1989-09-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee