NL8702800A - Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. - Google Patents

Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. Download PDF

Info

Publication number
NL8702800A
NL8702800A NL8702800A NL8702800A NL8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A
Authority
NL
Netherlands
Prior art keywords
voltage
transistor
bit line
supply voltage
memory circuit
Prior art date
Application number
NL8702800A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8702800A priority Critical patent/NL8702800A/nl
Priority to EP88202609A priority patent/EP0318094B1/en
Priority to KR1019880015297A priority patent/KR970006194B1/ko
Priority to DE88202609T priority patent/DE3884148T2/de
Priority to JP63294786A priority patent/JP2726456B2/ja
Publication of NL8702800A publication Critical patent/NL8702800A/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
NL8702800A 1987-11-23 1987-11-23 Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. NL8702800A (nl)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL8702800A NL8702800A (nl) 1987-11-23 1987-11-23 Geintegreerde geheugenschakeling met interne voedingsspanningsregeling.
EP88202609A EP0318094B1 (en) 1987-11-23 1988-11-21 Integrated memory circuit with on-chip supply voltage control
KR1019880015297A KR970006194B1 (ko) 1987-11-23 1988-11-21 집접 메모리 회로
DE88202609T DE3884148T2 (de) 1987-11-23 1988-11-21 Integrierte Speicherschaltung mit innerer Speisespannungsregelung.
JP63294786A JP2726456B2 (ja) 1987-11-23 1988-11-24 集積メモリ回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8702800 1987-11-23
NL8702800A NL8702800A (nl) 1987-11-23 1987-11-23 Geintegreerde geheugenschakeling met interne voedingsspanningsregeling.

Publications (1)

Publication Number Publication Date
NL8702800A true NL8702800A (nl) 1989-06-16

Family

ID=19850959

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8702800A NL8702800A (nl) 1987-11-23 1987-11-23 Geintegreerde geheugenschakeling met interne voedingsspanningsregeling.

Country Status (5)

Country Link
EP (1) EP0318094B1 (ko)
JP (1) JP2726456B2 (ko)
KR (1) KR970006194B1 (ko)
DE (1) DE3884148T2 (ko)
NL (1) NL8702800A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321658A (en) * 1990-05-31 1994-06-14 Oki Electric Industry Co., Ltd. Semiconductor memory device being coupled by auxiliary power lines to a main power line
JPH04123388A (ja) * 1990-09-13 1992-04-23 Nec Corp 半導体メモリ装置
JP2003016785A (ja) 2001-06-28 2003-01-17 Sharp Corp 半導体記憶装置およびそれを用いた情報機器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
JPS57172761A (en) * 1981-04-17 1982-10-23 Hitachi Ltd Semiconductor integrated circuit
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JP2726456B2 (ja) 1998-03-11
KR890008839A (ko) 1989-07-12
JPH01162295A (ja) 1989-06-26
DE3884148D1 (de) 1993-10-21
DE3884148T2 (de) 1994-03-31
KR970006194B1 (ko) 1997-04-24
EP0318094A1 (en) 1989-05-31
EP0318094B1 (en) 1993-09-15

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed