NL8600770A - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8600770A NL8600770A NL8600770A NL8600770A NL8600770A NL 8600770 A NL8600770 A NL 8600770A NL 8600770 A NL8600770 A NL 8600770A NL 8600770 A NL8600770 A NL 8600770A NL 8600770 A NL8600770 A NL 8600770A
- Authority
- NL
- Netherlands
- Prior art keywords
- opening
- electrode
- zone
- layer
- electrode zone
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/011—Bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8600770A NL8600770A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
EP87200372A EP0243988B1 (en) | 1986-03-26 | 1987-03-02 | Method of manufacturing a semiconductor device |
DE8787200372T DE3779802T2 (de) | 1986-03-26 | 1987-03-02 | Verfahren zur herstellung einer halbleiteranordnung. |
US07/025,554 US4859630A (en) | 1986-03-26 | 1987-03-13 | Method of manufacturing a semiconductor device |
CA000532338A CA1298000C (en) | 1986-03-26 | 1987-03-18 | Method of making a semiconductor device comprising contacting through an opening of reduced size |
JP62070515A JPS62242354A (ja) | 1986-03-26 | 1987-03-26 | 集積回路の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8600770A NL8600770A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
NL8600770 | 1986-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8600770A true NL8600770A (nl) | 1987-10-16 |
Family
ID=19847772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8600770A NL8600770A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4859630A (ja) |
EP (1) | EP0243988B1 (ja) |
JP (1) | JPS62242354A (ja) |
CA (1) | CA1298000C (ja) |
DE (1) | DE3779802T2 (ja) |
NL (1) | NL8600770A (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE461428B (sv) * | 1988-06-16 | 1990-02-12 | Ericsson Telefon Ab L M | Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena |
JPH02291150A (ja) * | 1989-04-28 | 1990-11-30 | Hitachi Ltd | 半導体装置 |
US5171702A (en) * | 1989-07-21 | 1992-12-15 | Texas Instruments Incorporated | Method for forming a thick base oxide in a BiCMOS process |
US5268314A (en) * | 1990-01-16 | 1993-12-07 | Philips Electronics North America Corp. | Method of forming a self-aligned bipolar transistor |
KR940001402B1 (ko) * | 1991-04-10 | 1994-02-21 | 삼성전자 주식회사 | 골드구조를 가지는 반도체소자의 제조방법 |
GB9219268D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Semiconductor device incorporating a contact and manufacture thereof |
US5416031A (en) * | 1992-09-30 | 1995-05-16 | Sony Corporation | Method of producing Bi-CMOS transistors |
US5459083A (en) * | 1993-03-01 | 1995-10-17 | Motorola, Inc. | Method for making BIMOS device having a bipolar transistor and a MOS triggering transistor |
US5619072A (en) * | 1995-02-09 | 1997-04-08 | Advanced Micro Devices, Inc. | High density multi-level metallization and interconnection structure |
US6281562B1 (en) | 1995-07-27 | 2001-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device which reduces the minimum distance requirements between active areas |
US6124189A (en) * | 1997-03-14 | 2000-09-26 | Kabushiki Kaisha Toshiba | Metallization structure and method for a semiconductor device |
KR100290903B1 (ko) * | 1998-02-25 | 2001-06-01 | 김영환 | 반도체소자 및 이의 제조방법 |
KR100275962B1 (ko) | 1998-12-30 | 2001-02-01 | 김영환 | 반도체장치 및 그의 제조방법_ |
US7629210B2 (en) | 2000-05-15 | 2009-12-08 | Nec Corporation | Method for fabricating an ESD protection apparatus for discharging electric charge in a depth direction |
US20010043449A1 (en) | 2000-05-15 | 2001-11-22 | Nec Corporation | ESD protection apparatus and method for fabricating the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU499808B1 (en) * | 1978-05-18 | 1979-05-03 | Ypsilantis, John | Alphanumeric display |
JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
US4346512A (en) * | 1980-05-05 | 1982-08-31 | Raytheon Company | Integrated circuit manufacturing method |
US4356623A (en) * | 1980-09-15 | 1982-11-02 | Texas Instruments Incorporated | Fabrication of submicron semiconductor devices |
JPS5775453A (en) * | 1980-10-29 | 1982-05-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4445268A (en) * | 1981-02-14 | 1984-05-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor integrated circuit BI-MOS device |
US4641420A (en) * | 1984-08-30 | 1987-02-10 | At&T Bell Laboratories | Metalization process for headless contact using deposited smoothing material |
-
1986
- 1986-03-26 NL NL8600770A patent/NL8600770A/nl not_active Application Discontinuation
-
1987
- 1987-03-02 DE DE8787200372T patent/DE3779802T2/de not_active Expired - Fee Related
- 1987-03-02 EP EP87200372A patent/EP0243988B1/en not_active Expired
- 1987-03-13 US US07/025,554 patent/US4859630A/en not_active Expired - Lifetime
- 1987-03-18 CA CA000532338A patent/CA1298000C/en not_active Expired - Lifetime
- 1987-03-26 JP JP62070515A patent/JPS62242354A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0243988B1 (en) | 1992-06-17 |
CA1298000C (en) | 1992-03-24 |
US4859630A (en) | 1989-08-22 |
JPS62242354A (ja) | 1987-10-22 |
DE3779802D1 (de) | 1992-07-23 |
JPH0529147B2 (ja) | 1993-04-28 |
DE3779802T2 (de) | 1993-01-14 |
EP0243988A1 (en) | 1987-11-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |