NL8401365A - Werkwijze voor het maken van halfgeleiderinrichtingen. - Google Patents

Werkwijze voor het maken van halfgeleiderinrichtingen. Download PDF

Info

Publication number
NL8401365A
NL8401365A NL8401365A NL8401365A NL8401365A NL 8401365 A NL8401365 A NL 8401365A NL 8401365 A NL8401365 A NL 8401365A NL 8401365 A NL8401365 A NL 8401365A NL 8401365 A NL8401365 A NL 8401365A
Authority
NL
Netherlands
Prior art keywords
acid
solution
photosensitive material
ester
process according
Prior art date
Application number
NL8401365A
Other languages
English (en)
Dutch (nl)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of NL8401365A publication Critical patent/NL8401365A/nl

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/08Compounds having one or more C—Si linkages
    • C07F7/18Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804Compounds having Si-O-C linkages
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07JSTEROIDS
    • C07J51/00Normal steroids with unmodified cyclopenta(a)hydrophenanthrene skeleton not provided for in groups C07J1/00 - C07J43/00
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
NL8401365A 1983-04-29 1984-04-27 Werkwijze voor het maken van halfgeleiderinrichtingen. NL8401365A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48979683 1983-04-29
US06/489,796 US4551416A (en) 1981-05-22 1983-04-29 Process for preparing semiconductors using photosensitive bodies

Publications (1)

Publication Number Publication Date
NL8401365A true NL8401365A (nl) 1984-11-16

Family

ID=23945301

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8401365A NL8401365A (nl) 1983-04-29 1984-04-27 Werkwijze voor het maken van halfgeleiderinrichtingen.

Country Status (8)

Country Link
US (1) US4551416A (de)
JP (2) JPS6017445A (de)
CA (1) CA1219686A (de)
DE (1) DE3415791A1 (de)
FR (1) FR2545232A1 (de)
GB (1) GB2140929B (de)
IT (1) IT1206143B (de)
NL (1) NL8401365A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4666820A (en) * 1983-04-29 1987-05-19 American Telephone And Telegraph Company, At&T Laboratories Photosensitive element comprising a substrate and an alkaline soluble mixture
DE3642184A1 (de) * 1986-12-10 1988-06-23 Basf Ag Copolymerisate mit o-nitrocarbinolestergruppierungen und deren verwendung
DE3701569A1 (de) * 1987-01-21 1988-08-04 Basf Ag Copolymerisate mit o-nitrocarbinolestergruppierungen, deren verwendung sowie verfahren zur herstellung von halbleiterbauelementen
DE3702035A1 (de) * 1987-01-24 1988-08-04 Basf Ag Copolymerisate mit o-nitrocarbinolestergruppierungen und verfahren zur herstellung von zweilagenresisten sowie von halbleiterbauelementen
JP2540199B2 (ja) * 1988-02-25 1996-10-02 アメリカン テレフォン アンド テレグラフ カムパニー デバイスの製造方法
GB8812235D0 (en) * 1988-05-24 1988-06-29 Jones B L Manufacturing electronic devices
DE69029104T2 (de) * 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxane und positiv arbeitende Resistmasse
US5397665A (en) * 1990-04-27 1995-03-14 Dai Nippon Printing Co., Ltd. Photomask with pellicle and method of treating and storing the same
JP2904948B2 (ja) * 1991-03-28 1999-06-14 コニカ株式会社 ハロゲン化銀カラー写真感光材料の処理方法及び安定液
US5449834A (en) * 1994-07-13 1995-09-12 Ppg Industries, Inc. Method of synthesizing 2,6-dinitro benzyl compounds
US5600035A (en) * 1994-07-13 1997-02-04 Ppg Industries, Inc. Positive photoactive compounds based on 2,6-dinitro benzyl groups and 2,5-dinitro benzyl groups
KR970011972A (ko) * 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
KR20010009339A (ko) * 1999-07-09 2001-02-05 박찬구 카르복시산 유도체 및 그 제조방법
WO2013142830A1 (en) * 2012-03-22 2013-09-26 The Regents Of The University Of Colorado, A Body Corporate Liquid deposition photolithography

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1158843A (en) * 1966-05-27 1969-07-23 Agfa Gevaert Nv Light-Sensitive Copying Material
DE2150691C2 (de) * 1971-10-12 1982-09-09 Basf Ag, 6700 Ludwigshafen Lichtempfindliches Gemisch und Verwendung eines lichtempfindlichen Gemisches zur Herstellung einer Flachdruckplatte
GB1418169A (en) * 1972-02-25 1975-12-17 Hitachi Chemical Co Ltd Resist image formation process and resin compositions and materials for use in said process
DE2242394A1 (de) * 1972-08-29 1974-03-14 Basf Ag Unter lichteinwirkung haertbare stoffgemische
US3949143A (en) * 1973-02-09 1976-04-06 American Can Company Epoxy resin coatings cured with phototropic aromatic nitro compounds
US4086210A (en) * 1976-05-10 1978-04-25 Eastman Kodak Company Radiation sensitive polymeric o-nitrophenyl acetals
US4108839A (en) * 1977-01-21 1978-08-22 E. I. Du Pont De Nemours And Company Photosensitive polyaldehydes and use in photoimaging
DE2922746A1 (de) * 1979-06-05 1980-12-11 Basf Ag Positiv arbeitendes schichtuebertragungsmaterial
US4400461A (en) * 1981-05-22 1983-08-23 Bell Telephone Laboratories, Incorporated Process of making semiconductor devices using photosensitive bodies
FR2510275A1 (fr) * 1981-07-27 1983-01-28 Toyo Boseki Composition de resine photosensible

Also Published As

Publication number Publication date
IT1206143B (it) 1989-04-14
JPS6017445A (ja) 1985-01-29
US4551416A (en) 1985-11-05
DE3415791A1 (de) 1984-10-31
JPS59208547A (ja) 1984-11-26
GB2140929B (en) 1986-02-19
FR2545232A1 (fr) 1984-11-02
IT8420726A0 (it) 1984-04-27
GB8410200D0 (en) 1984-05-31
CA1219686A (en) 1987-03-24
GB2140929A (en) 1984-12-05

Similar Documents

Publication Publication Date Title
JP2562178B2 (ja) 感光層形成材料用の放射線感応性混合物
JP3031413B2 (ja) ビニル4−テトラヒドロピラニルオキシベンザル−ビニルテトラヒドロピラニルエーテル−ビニルアセテート共重合体、ビニル4−テトラヒドロピラニルオキシベンザル−ビニル4−ヒドロキシベンザル−ビニルテトラヒドロピラニルエーテル−ビニルアセテート共重合体、これらの製造方法、及びフォトレジスト
JP2675138B2 (ja) ポジチブ及びネガチブ処理感放射線混合物及びレリーフパターンの作製方法
CA1308594C (en) Thermally stable photoresists with high sensitivity
JP2625014B2 (ja) 感放射線混合物及びレリーフパターン作製方法
NL8401365A (nl) Werkwijze voor het maken van halfgeleiderinrichtingen.
TWI597269B (zh) 於抗蝕劑應用中作為光酸生成劑之磺酸衍生化合物
US4980264A (en) Photoresist compositions of controlled dissolution rate in alkaline developers
JP2759079B2 (ja) 高エネルギー照射線硬化可能な組成物及び高エネルギー照射線記録法
US4400461A (en) Process of making semiconductor devices using photosensitive bodies
JP4102010B2 (ja) 有機反射防止膜用組成物とその製造方法
JPH10512969A (ja) 低金属イオンp−クレゾールオリゴマーおよび感光性組成物
JPH0216909B2 (de)
US4666820A (en) Photosensitive element comprising a substrate and an alkaline soluble mixture
JP2645587B2 (ja) 微細パターン形成材料及び微細パターン形成方法
JPH08262702A (ja) 200nm未満の波長をもつ紫外放射線のための湿式化学現像可能な、エッチ安定なフォトレジスト
JP2001515606A (ja) 新規の光活性化合物を含有するポジ型フォトレジスト
JP2962145B2 (ja) ネガ型パターン形成材料
JPH05339474A (ja) 感光性組成物
JPH03153256A (ja) 放射線感応性混合物及びレリーフ構造又はレリーフパターンの製法
JP3064056B2 (ja) 縮合樹脂及びこれを含有する感放射線性樹脂組成物
EP0788620B1 (de) Positiv arbeitende lichtempfindliche zusammensetzung
JPH01163207A (ja) 3,5−ジ置換−4−アセトキシスチレンの重合、加水分解および使用法
JP3099528B2 (ja) ドライ現像用感放射線性樹脂組成物
JPH0367257B2 (de)

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BT A notification was added to the application dossier and made available to the public
BV The patent application has lapsed