NL8400326A - Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen. - Google Patents

Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen. Download PDF

Info

Publication number
NL8400326A
NL8400326A NL8400326A NL8400326A NL8400326A NL 8400326 A NL8400326 A NL 8400326A NL 8400326 A NL8400326 A NL 8400326A NL 8400326 A NL8400326 A NL 8400326A NL 8400326 A NL8400326 A NL 8400326A
Authority
NL
Netherlands
Prior art keywords
voltage
memory
transistors
programming
transistor
Prior art date
Application number
NL8400326A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8400326A priority Critical patent/NL8400326A/nl
Priority to US06/618,006 priority patent/US4616339A/en
Priority to DE8585200076T priority patent/DE3577019D1/de
Priority to EP85200076A priority patent/EP0155709B1/en
Priority to IE228/85A priority patent/IE56337B1/en
Priority to JP60018484A priority patent/JPS60180000A/ja
Priority to CA000473434A priority patent/CA1235506A/en
Priority to KR1019850000658A priority patent/KR930001656B1/ko
Publication of NL8400326A publication Critical patent/NL8400326A/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
NL8400326A 1984-02-03 1984-02-03 Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen. NL8400326A (nl)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL8400326A NL8400326A (nl) 1984-02-03 1984-02-03 Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.
US06/618,006 US4616339A (en) 1984-02-03 1984-06-06 Integrated circuit with improved programmable read-only memory
DE8585200076T DE3577019D1 (de) 1984-02-03 1985-01-24 Integrierte schaltung mit feldeffekttransistoren und einem programmierbaren festwertspeicher.
EP85200076A EP0155709B1 (en) 1984-02-03 1985-01-24 Integrated circuit comprising field effect transistors and a programmable read-only memory
IE228/85A IE56337B1 (en) 1984-02-03 1985-01-31 Integrated circuit comprising field effect transistors and a programmable read-only memory
JP60018484A JPS60180000A (ja) 1984-02-03 1985-02-01 電界効果トランジスタとプログラム可能読取り専用メモリとを有する集積回路
CA000473434A CA1235506A (en) 1984-02-03 1985-02-01 Integrated circuit comprising field effect transistors and a programmable read-only memory
KR1019850000658A KR930001656B1 (ko) 1984-02-03 1985-02-02 집적 메모리 회로

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8400326 1984-02-03
NL8400326A NL8400326A (nl) 1984-02-03 1984-02-03 Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.

Publications (1)

Publication Number Publication Date
NL8400326A true NL8400326A (nl) 1985-09-02

Family

ID=19843418

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8400326A NL8400326A (nl) 1984-02-03 1984-02-03 Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.

Country Status (8)

Country Link
US (1) US4616339A (ko)
EP (1) EP0155709B1 (ko)
JP (1) JPS60180000A (ko)
KR (1) KR930001656B1 (ko)
CA (1) CA1235506A (ko)
DE (1) DE3577019D1 (ko)
IE (1) IE56337B1 (ko)
NL (1) NL8400326A (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240698A (ja) * 1985-08-16 1987-02-21 Fujitsu Ltd 半導体記憶装置
US4751678A (en) * 1985-11-12 1988-06-14 Motorola, Inc. Erase circuit for CMOS EEPROM
FR2600810A1 (fr) * 1986-06-27 1987-12-31 Eurotechnique Sa Procede de programmation de donnees dans une memoire morte programmable electriquement
IT1214246B (it) * 1987-05-27 1990-01-10 Sgs Microelettronica Spa Dispositivo di memoria non volatile ad elevato numero di cicli di modifica.
US5010520A (en) * 1987-07-29 1991-04-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with stabilized data write characteristic
US4820941A (en) * 1988-02-01 1989-04-11 Texas Instruments Incorporated Decoder driver circuit for programming high-capacitance lines
JP3384409B2 (ja) * 1989-11-08 2003-03-10 富士通株式会社 書換え可能な不揮発性半導体記憶装置及びその制御方法
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
FR2822286A1 (fr) * 2001-03-19 2002-09-20 St Microelectronics Sa Memoire eeprom programmable par mot comprenant des verrous de selection de colonne a double fonction
FR2876491B1 (fr) * 2004-10-07 2006-12-15 Atmel Corp Verrou de colonne accessible en lecture pour memoires non volatiles
US20070007577A1 (en) * 2005-07-06 2007-01-11 Matrix Semiconductor, Inc. Integrated circuit embodying a non-volatile memory cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266283A (en) * 1979-02-16 1981-05-05 Intel Corporation Electrically alterable read-mostly memory
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
JPS5891680A (ja) * 1981-11-26 1983-05-31 Fujitsu Ltd 半導体装置
JPS58114396A (ja) * 1981-12-26 1983-07-07 Toshiba Corp 不揮発性メモリ−
JPS58122687A (ja) * 1982-01-14 1983-07-21 Nec Corp 半導体記憶装置
US4486670A (en) * 1982-01-19 1984-12-04 Intersil, Inc. Monolithic CMOS low power digital level shifter
US4511811A (en) * 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array

Also Published As

Publication number Publication date
KR930001656B1 (ko) 1993-03-08
JPS60180000A (ja) 1985-09-13
IE850228L (en) 1985-08-03
JPH0587918B2 (ko) 1993-12-20
CA1235506A (en) 1988-04-19
EP0155709A1 (en) 1985-09-25
EP0155709B1 (en) 1990-04-04
KR850006120A (ko) 1985-09-28
IE56337B1 (en) 1991-06-19
DE3577019D1 (de) 1990-05-10
US4616339A (en) 1986-10-07

Similar Documents

Publication Publication Date Title
US4216390A (en) Level shift circuit
US5392253A (en) Nonvolatile semiconductor memory device having row decoder supplying a negative potential to word lines during erase mode
EP0052566A2 (en) Electrically erasable programmable read-only memory
NL8400326A (nl) Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.
US4565932A (en) High voltage circuit for use in programming memory circuits (EEPROMs)
JP2530821B2 (ja) 半導体メモリ
EP0301588A2 (en) Semiconductor memory device
EP0143596B1 (en) Programmable read-only memory device
JPS61290817A (ja) Ｃｍｏｓ高電圧スイツチ
US4460981A (en) Virtual ground memory
US4159540A (en) Memory array address buffer with level shifting
US5761132A (en) Integrated circuit memory devices with latch-free page buffers therein for preventing read failures
KR960001860B1 (ko) 반도체집적회로의 데이타 입출력선 센싱회로
US5051956A (en) Memory cell having means for maintaining the gate and substrate at the same potential
KR100784473B1 (ko) 플래시 메모리의 워드 라인 디코딩 구조
US5774401A (en) Data input/output circuit for performing high speed memory data read operation
EP0063357B1 (en) Drive circuit
EP0078502B1 (en) Memory circuit
EP0345791A2 (en) Nonvolatile semiconductor memory
EP0377840A2 (en) Nonvolatile semiconductor memory device having reference potential generating circuit
US4091360A (en) Dynamic precharge circuitry
WO1997022971A9 (en) A negative voltage switch architecture for a nonvolatile memory
US7633806B2 (en) Memory device with a nonvolatile memory array
US6487139B1 (en) Memory row line driver circuit
JPH0245278B2 (ko)

Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed