NL8302180A - Modificatie van de eigenschappen van metalen. - Google Patents
Modificatie van de eigenschappen van metalen. Download PDFInfo
- Publication number
- NL8302180A NL8302180A NL8302180A NL8302180A NL8302180A NL 8302180 A NL8302180 A NL 8302180A NL 8302180 A NL8302180 A NL 8302180A NL 8302180 A NL8302180 A NL 8302180A NL 8302180 A NL8302180 A NL 8302180A
- Authority
- NL
- Netherlands
- Prior art keywords
- metal
- substrate
- organic compound
- gold
- properties
- Prior art date
Links
- 230000004048 modification Effects 0.000 title description 3
- 238000012986 modification Methods 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 54
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 45
- 229910052737 gold Inorganic materials 0.000 claims description 45
- 239000010931 gold Substances 0.000 claims description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 36
- 125000000524 functional group Chemical group 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 21
- 229910052697 platinum Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims description 16
- 150000002894 organic compounds Chemical class 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 239000010970 precious metal Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000011593 sulfur Substances 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- YPGMOWHXEQDBBV-QWWZWVQMSA-N (4S,5S)-1,2-dithiane-4,5-diol Chemical compound O[C@@H]1CSSC[C@H]1O YPGMOWHXEQDBBV-QWWZWVQMSA-N 0.000 claims description 4
- 238000009736 wetting Methods 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 41
- 239000003607 modifier Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 29
- 150000002739 metals Chemical class 0.000 description 19
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 16
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 239000000314 lubricant Substances 0.000 description 10
- 150000003003 phosphines Chemical class 0.000 description 10
- -1 precious metals Chemical class 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000013459 approach Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 125000001424 substituent group Chemical group 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 150000002019 disulfides Chemical class 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000000313 electron-beam-induced deposition Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000004627 transmission electron microscopy Methods 0.000 description 4
- YCLSOMLVSHPPFV-UHFFFAOYSA-N 3-(2-carboxyethyldisulfanyl)propanoic acid Chemical compound OC(=O)CCSSCCC(O)=O YCLSOMLVSHPPFV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229920006380 polyphenylene oxide Polymers 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LIERWEBBQSYXQB-UHFFFAOYSA-N 1,2-dimethylcycloocta-1,5-diene platinum(2+) Chemical compound [Pt+2].CC1=C(C)CCC=CCC1 LIERWEBBQSYXQB-UHFFFAOYSA-N 0.000 description 1
- KIUMMUBSPKGMOY-UHFFFAOYSA-N 3,3'-Dithiobis(6-nitrobenzoic acid) Chemical group C1=C([N+]([O-])=O)C(C(=O)O)=CC(SSC=2C=C(C(=CC=2)[N+]([O-])=O)C(O)=O)=C1 KIUMMUBSPKGMOY-UHFFFAOYSA-N 0.000 description 1
- GFZXQBDELXEPTQ-UHFFFAOYSA-N 3-[(3-carboxy-2-nitrophenyl)disulfanyl]-2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC(SSC=2C(=C(C(O)=O)C=CC=2)[N+]([O-])=O)=C1[N+]([O-])=O GFZXQBDELXEPTQ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000010933 acylation Effects 0.000 description 1
- 238000005917 acylation reaction Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 229940125773 compound 10 Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- ZLVXBBHTMQJRSX-VMGNSXQWSA-N jdtic Chemical compound C1([C@]2(C)CCN(C[C@@H]2C)C[C@H](C(C)C)NC(=O)[C@@H]2NCC3=CC(O)=CC=C3C2)=CC=CC(O)=C1 ZLVXBBHTMQJRSX-VMGNSXQWSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000008427 organic disulfides Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 125000004354 sulfur functional group Chemical group 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Physical Vapour Deposition (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38977582 | 1982-06-18 | ||
| US06/389,775 US4690715A (en) | 1982-06-18 | 1982-06-18 | Modification of the properties of metals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8302180A true NL8302180A (nl) | 1984-01-16 |
Family
ID=23539679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8302180A NL8302180A (nl) | 1982-06-18 | 1983-06-17 | Modificatie van de eigenschappen van metalen. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4690715A (ja) |
| JP (1) | JPS596378A (ja) |
| CA (1) | CA1235632A (ja) |
| DE (1) | DE3322009A1 (ja) |
| FR (1) | FR2528877B1 (ja) |
| GB (1) | GB2123442B (ja) |
| NL (1) | NL8302180A (ja) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262088A (en) * | 1991-01-24 | 1993-11-16 | Dow Corning Corporation | Emulsion gelled silicone antifoams |
| US5378502A (en) * | 1992-09-09 | 1995-01-03 | U.S. Philips Corporation | Method of chemically modifying a surface in accordance with a pattern |
| US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
| US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
| US5776748A (en) * | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
| US6776094B1 (en) * | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
| US6180239B1 (en) | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
| US5487792A (en) * | 1994-06-13 | 1996-01-30 | Midwest Research Institute | Molecular assemblies as protective barriers and adhesion promotion interlayer |
| US5598193A (en) * | 1995-03-24 | 1997-01-28 | Hewlett-Packard Company | Treatment of an orifice plate with self-assembled monolayers |
| US6060121A (en) * | 1996-03-15 | 2000-05-09 | President And Fellows Of Harvard College | Microcontact printing of catalytic colloids |
| US6355198B1 (en) | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
| US5852229A (en) * | 1996-05-29 | 1998-12-22 | Kimberly-Clark Worldwide, Inc. | Piezoelectric resonator chemical sensing device |
| SE9602545L (sv) * | 1996-06-25 | 1997-12-26 | Michael Mecklenburg | Metod för att diskriminera komplexa biologiska prover |
| US6020047A (en) * | 1996-09-04 | 2000-02-01 | Kimberly-Clark Worldwide, Inc. | Polymer films having a printed self-assembling monolayer |
| US6048623A (en) * | 1996-12-18 | 2000-04-11 | Kimberly-Clark Worldwide, Inc. | Method of contact printing on gold coated films |
| US5922550A (en) * | 1996-12-18 | 1999-07-13 | Kimberly-Clark Worldwide, Inc. | Biosensing devices which produce diffraction images |
| US6180288B1 (en) | 1997-03-21 | 2001-01-30 | Kimberly-Clark Worldwide, Inc. | Gel sensors and method of use thereof |
| US5778792A (en) * | 1997-05-02 | 1998-07-14 | Lu; Tsung-Tai | Method for forming a pattern on a surface of an aluminum extrusion |
| US6060256A (en) | 1997-12-16 | 2000-05-09 | Kimberly-Clark Worldwide, Inc. | Optical diffraction biosensor |
| EP2189791A3 (en) | 1998-02-04 | 2011-03-09 | Life Technologies Corporation | Microarrays and uses therefor |
| US6682942B1 (en) | 1998-07-14 | 2004-01-27 | Zyomyx, Inc. | Microdevices for screening biomolecules |
| US6406921B1 (en) | 1998-07-14 | 2002-06-18 | Zyomyx, Incorporated | Protein arrays for high-throughput screening |
| US6576478B1 (en) * | 1998-07-14 | 2003-06-10 | Zyomyx, Inc. | Microdevices for high-throughput screening of biomolecules |
| US6897073B2 (en) * | 1998-07-14 | 2005-05-24 | Zyomyx, Inc. | Non-specific binding resistant protein arrays and methods for making the same |
| US20020119579A1 (en) * | 1998-07-14 | 2002-08-29 | Peter Wagner | Arrays devices and methods of use thereof |
| US6157480A (en) * | 1998-09-21 | 2000-12-05 | Gentex Corporation | Seal for electrochromic devices |
| US6221579B1 (en) | 1998-12-11 | 2001-04-24 | Kimberly-Clark Worldwide, Inc. | Patterned binding of functionalized microspheres for optical diffraction-based biosensors |
| US6579673B2 (en) | 1998-12-17 | 2003-06-17 | Kimberly-Clark Worldwide, Inc. | Patterned deposition of antibody binding protein for optical diffraction-based biosensors |
| US7167615B1 (en) | 1999-11-05 | 2007-01-23 | Board Of Regents, The University Of Texas System | Resonant waveguide-grating filters and sensors and methods for making and using same |
| US6399295B1 (en) | 1999-12-17 | 2002-06-04 | Kimberly-Clark Worldwide, Inc. | Use of wicking agent to eliminate wash steps for optical diffraction-based biosensors |
| US7198747B2 (en) | 2000-09-18 | 2007-04-03 | President And Fellows Of Harvard College | Fabrication of ceramic microstructures |
| US20110024391A1 (en) * | 2004-08-12 | 2011-02-03 | Brian David Babcock | Methods for creating a surface energy gradient |
| US7098041B2 (en) | 2001-12-11 | 2006-08-29 | Kimberly-Clark Worldwide, Inc. | Methods to view and analyze the results from diffraction-based diagnostics |
| US7102752B2 (en) * | 2001-12-11 | 2006-09-05 | Kimberly-Clark Worldwide, Inc. | Systems to view and analyze the results from diffraction-based diagnostics |
| US20030215723A1 (en) * | 2002-04-19 | 2003-11-20 | Bearinger Jane P. | Methods and apparatus for selective, oxidative patterning of a surface |
| US7223534B2 (en) | 2002-05-03 | 2007-05-29 | Kimberly-Clark Worldwide, Inc. | Diffraction-based diagnostic devices |
| US7223368B2 (en) | 2002-05-03 | 2007-05-29 | Kimberly-Clark Worldwide, Inc. | Diffraction-based diagnostic devices |
| US7485453B2 (en) * | 2002-05-03 | 2009-02-03 | Kimberly-Clark Worldwide, Inc. | Diffraction-based diagnostic devices |
| US7118855B2 (en) * | 2002-05-03 | 2006-10-10 | Kimberly-Clark Worldwide, Inc. | Diffraction-based diagnostic devices |
| US7771922B2 (en) | 2002-05-03 | 2010-08-10 | Kimberly-Clark Worldwide, Inc. | Biomolecule diagnostic device |
| US7214530B2 (en) | 2002-05-03 | 2007-05-08 | Kimberly-Clark Worldwide, Inc. | Biomolecule diagnostic devices and method for producing biomolecule diagnostic devices |
| US7091049B2 (en) | 2002-06-26 | 2006-08-15 | Kimberly-Clark Worldwide, Inc. | Enhanced diffraction-based biosensor devices |
| US7153440B2 (en) * | 2002-09-12 | 2006-12-26 | Pts Corporation | Surfactant-enhanced protection of micromechanical components from galvanic degradation |
| US7169550B2 (en) * | 2002-09-26 | 2007-01-30 | Kimberly-Clark Worldwide, Inc. | Diffraction-based diagnostic devices |
| US20050053949A1 (en) * | 2003-09-08 | 2005-03-10 | Silin Vitalii Ivanovich | Biochip for proteomics applications |
| US6989290B2 (en) * | 2003-11-15 | 2006-01-24 | Ari Aviram | Electrical contacts for molecular electronic transistors |
| US7019328B2 (en) * | 2004-06-08 | 2006-03-28 | Palo Alto Research Center Incorporated | Printed transistors |
| US7327774B2 (en) * | 2004-12-17 | 2008-02-05 | Palo Alto Research Center Incorporated | Self-forming microlenses for VCSEL arrays |
| US7749396B2 (en) * | 2006-03-24 | 2010-07-06 | Palo Alto Research Center Incorporated | Method of manufacturing fine features for thin film transistors |
| US7524768B2 (en) * | 2006-03-24 | 2009-04-28 | Palo Alto Research Center Incorporated | Method using monolayer etch masks in combination with printed masks |
| US7414770B2 (en) * | 2006-05-03 | 2008-08-19 | Gentex Corporation | Contollably dissolving spacing member and associated electrochromic device and method for manufacturing the same |
| US8586006B2 (en) | 2006-08-09 | 2013-11-19 | Institute For Systems Biology | Organ-specific proteins and methods of their use |
| IT1394814B1 (it) * | 2009-07-13 | 2012-07-13 | St Microelectronics Srl | Trattamento superficiale di un substrato organico o inorganico per migliorare la stabilità di uno strato metallico depositato e definito litograficamente |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US29039A (en) * | 1860-07-03 | Improvement in soldering-i rons | ||
| US2464143A (en) * | 1946-09-07 | 1949-03-08 | Eastman Kodak Co | Method of silver coating organic surfaces |
| FR1200715A (fr) * | 1957-05-07 | 1959-12-23 | Renault | Traitement superficiel de pièces métalliques |
| NL268724A (ja) * | 1960-08-31 | |||
| US3222218A (en) * | 1962-01-02 | 1965-12-07 | Exxon Research Engineering Co | Metal coating process |
| US3367792A (en) * | 1963-09-16 | 1968-02-06 | Dow Chemical Co | Electroless plating on nonconducting surfaces |
| US3320115A (en) * | 1964-09-03 | 1967-05-16 | Hercules Inc | Process for bonding polyolefin to metal and article of manufacture |
| US3445264A (en) * | 1965-06-24 | 1969-05-20 | Ibm | Method and composition for treating the surface of polymeric articles to improve adhesion |
| GB1130540A (en) * | 1966-02-18 | 1968-10-16 | Goddard & Sons Ltd J | Protecting silver against tarnish |
| US3629922A (en) * | 1967-03-23 | 1971-12-28 | Hooker Chemical Corp | Metal plating of plastics |
| GB1261768A (en) * | 1969-08-13 | 1972-01-26 | Phillips Petroleum Co | Process for the anti-tarnish treatment of metals and a composition therefor |
| US3770513A (en) * | 1972-06-08 | 1973-11-06 | American Cyanamid Co | Chemical treatment of metal |
| US4029827A (en) * | 1974-07-24 | 1977-06-14 | Xerox Corporation | Mercapto functional polyorganosiloxane release agents for fusers in electrostatic copiers |
| JPS51139831A (en) * | 1975-05-29 | 1976-12-02 | Shin Etsu Chem Co Ltd | Primer composition |
| US4063004A (en) * | 1975-12-30 | 1977-12-13 | Hooker Chemicals & Plastics Corporation | Metal plating of plastics |
| GB1602838A (en) * | 1978-05-30 | 1981-11-18 | Al Hajry M N | Treating surfaces of inorganic materials |
| US4301190A (en) * | 1978-08-17 | 1981-11-17 | Nathan Feldstein | Pretreatment with complexing agent in process for electroless plating |
| US4298636A (en) * | 1978-10-12 | 1981-11-03 | Licentia Patent-Verwaltungs-G.M.B.H. | Process for activating plastic surfaces for metallization thereof by treatment with a complex forming solution |
| JPS5922793B2 (ja) * | 1979-10-23 | 1984-05-29 | 新日本製鐵株式会社 | 鋼材の防錆処理方法 |
| CA1159729A (en) * | 1980-02-11 | 1984-01-03 | James B. Mcgee | Adhesion of metals to solid substrates |
-
1982
- 1982-06-18 US US06/389,775 patent/US4690715A/en not_active Expired - Lifetime
-
1983
- 1983-05-30 CA CA000429226A patent/CA1235632A/en not_active Expired
- 1983-06-13 FR FR8309738A patent/FR2528877B1/fr not_active Expired
- 1983-06-15 GB GB08316239A patent/GB2123442B/en not_active Expired
- 1983-06-17 NL NL8302180A patent/NL8302180A/nl not_active Application Discontinuation
- 1983-06-18 DE DE19833322009 patent/DE3322009A1/de not_active Withdrawn
- 1983-06-18 JP JP58110023A patent/JPS596378A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS596378A (ja) | 1984-01-13 |
| GB2123442A (en) | 1984-02-01 |
| FR2528877B1 (fr) | 1988-04-29 |
| GB2123442B (en) | 1986-06-18 |
| US4690715A (en) | 1987-09-01 |
| DE3322009A1 (de) | 1983-12-22 |
| CA1235632A (en) | 1988-04-26 |
| GB8316239D0 (en) | 1983-07-20 |
| FR2528877A1 (fr) | 1983-12-23 |
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| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |