NL8204475A - Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. - Google Patents

Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. Download PDF

Info

Publication number
NL8204475A
NL8204475A NL8204475A NL8204475A NL8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A
Authority
NL
Netherlands
Prior art keywords
native oxide
substrate
oxygen
oxygen atoms
radiation
Prior art date
Application number
NL8204475A
Other languages
English (en)
Dutch (nl)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NL8204475A publication Critical patent/NL8204475A/nl

Links

Classifications

    • H10P14/6312—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H10P14/6338—
    • H10P14/668—
    • H10P14/692—
    • H10P14/69215—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
NL8204475A 1981-11-23 1982-11-18 Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. NL8204475A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23
US32378081 1981-11-23

Publications (1)

Publication Number Publication Date
NL8204475A true NL8204475A (nl) 1983-06-16

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8204475A NL8204475A (nl) 1981-11-23 1982-11-18 Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen.

Country Status (5)

Country Link
JP (1) JPS58155725A (en:Method)
DE (1) DE3242921A1 (en:Method)
FR (1) FR2517121A1 (en:Method)
GB (1) GB2111037B (en:Method)
NL (1) NL8204475A (en:Method)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法
WO1986005320A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Method and system for fabricating insulating layer on semiconductor substrate surface
DE3545242A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
FR2635915B1 (fr) * 1988-08-30 1992-04-30 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
CN100473454C (zh) * 2004-05-21 2009-04-01 三菱瓦斯化学株式会社 进行物质氧化的方法和该方法采用的氧化设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
DE3066027D1 (en) * 1979-12-17 1984-02-02 Hughes Aircraft Co Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
JPH0436456B2 (en:Method) 1992-06-16
GB2111037B (en) 1984-10-17
FR2517121A1 (fr) 1983-05-27
JPS58155725A (ja) 1983-09-16
DE3242921A1 (de) 1983-08-04
GB2111037A (en) 1983-06-29

Similar Documents

Publication Publication Date Title
US4474829A (en) Low-temperature charge-free process for forming native oxide layers
Capasso et al. A proposed hydrogenation/nitridization passivation mechanism for GaAs and other III–V semiconductor devices, including InGaAs long wavelength photodetectors
Shcheglov et al. Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures
US5616947A (en) Semiconductor device having an MIS structure
US4585491A (en) Wavelength tuning of quantum well lasers by thermal annealing
US5962883A (en) Article comprising an oxide layer on a GaAs-based semiconductor body
US4590091A (en) Photochemical process for substrate surface preparation
US4910436A (en) Wide area VUV lamp with grids and purging jets
JPH11126758A (ja) 半導体素子製造方法
NL8204475A (nl) Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen.
KR100500908B1 (ko) 건식 산화물 에칭용 자외선/할로겐 처리
JPH0856057A (ja) 高出力半導体レーザのエンド・ミラーを準備しパッシベーションする方法および関連するレーザ・デバイス
JP3491050B2 (ja) 炭化けい素半導体装置の熱酸化膜形成方法
CN110199380B (zh) 在碳化硅上制造绝缘层的方法
JPWO2002017450A1 (ja) 半導体レーザ素子の製造方法
Marks et al. Silicon dioxide deposition at 100° C using vacuum ultraviolet light
Kish et al. Native‐oxide stripe‐geometry In0. 5 (Al x Ga1− x) 0.5 P‐In0. 5Ga0. 5P heterostructure laser diodes
JP3310386B2 (ja) 絶縁酸化膜の形成方法及び半導体装置
Pellegrini et al. Improved optical emission of porous silicon with different postanodization processes
JP2005525704A (ja) 光半導体素子のミラー型表面の不動態化方法
EP0533497A2 (en) Dry etching method
US4705760A (en) Preparation of a surface for deposition of a passinating layer
US5851904A (en) Method of manufacturing microcrystalline layers and their utilization
US4727555A (en) Wavelength tuned quantum well lasers
JPH10256225A (ja) 薄膜基板の陽極化成処理方法及びフォトルミネッセンス特性をもつ半導体薄膜

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BV The patent application has lapsed