NL8102752A - Halfgeleider geintegreerde ketenorganen. - Google Patents
Halfgeleider geintegreerde ketenorganen. Download PDFInfo
- Publication number
- NL8102752A NL8102752A NL8102752A NL8102752A NL8102752A NL 8102752 A NL8102752 A NL 8102752A NL 8102752 A NL8102752 A NL 8102752A NL 8102752 A NL8102752 A NL 8102752A NL 8102752 A NL8102752 A NL 8102752A
- Authority
- NL
- Netherlands
- Prior art keywords
- crc
- conductivity
- conductive layer
- zone
- zones
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000003990 capacitor Substances 0.000 claims description 13
- 238000011109 contamination Methods 0.000 claims description 6
- 210000000056 organ Anatomy 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000000638 stimulation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000009021 linear effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H1/02—RC networks, e.g. filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
- H03H11/12—Frequency selective two-port networks using amplifiers with feedback
- H03H11/1204—Distributed RC filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15745280 | 1980-06-06 | ||
| US06/157,452 US4399417A (en) | 1980-06-06 | 1980-06-06 | Integrated CRC filter circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8102752A true NL8102752A (nl) | 1982-01-04 |
Family
ID=22563779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8102752A NL8102752A (nl) | 1980-06-06 | 1981-06-05 | Halfgeleider geintegreerde ketenorganen. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4399417A (enExample) |
| CA (1) | CA1154544A (enExample) |
| DE (1) | DE3122229A1 (enExample) |
| FR (1) | FR2484142A1 (enExample) |
| GB (1) | GB2077496B (enExample) |
| IT (1) | IT1167456B (enExample) |
| NL (1) | NL8102752A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5875922A (ja) * | 1981-10-30 | 1983-05-07 | Toshiba Corp | 半導体スイツチ回路 |
| GB2136235B (en) * | 1983-02-22 | 1986-07-09 | Philips Electronic Associated | Rc active filter device |
| CA1228175A (en) * | 1984-06-20 | 1987-10-13 | Yusuf A. Haque | Integrated circuit filter with reduced die area |
| FR2567325B1 (fr) * | 1984-07-03 | 1986-11-14 | Thomson Csf | Element a capacite variable, commandable par une tension continue |
| NO861166L (no) * | 1985-04-24 | 1986-10-27 | Siemens Ag | Celle oppbygget i cmos-teknikk. |
| US4853759A (en) * | 1986-09-29 | 1989-08-01 | American Microsystems, Inc. | Integrated circuit filter with reduced die area |
| DE3714672A1 (de) * | 1987-05-02 | 1988-11-17 | Telefunken Electronic Gmbh | Rc-leitung |
| NL8701357A (nl) * | 1987-06-11 | 1989-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag. |
| WO1990015486A1 (en) * | 1989-06-05 | 1990-12-13 | Motorola, Inc. | Receiver with improved intermodulation performance |
| GB9416900D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | A variable capacitance semiconductor diode |
| US5923077A (en) * | 1998-02-11 | 1999-07-13 | Bourns, Inc. | Passive component integrated circuit chip |
| US7436678B2 (en) * | 2004-10-18 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Capacitive/resistive devices and printed wiring boards incorporating such devices and methods of making thereof |
| US7382627B2 (en) * | 2004-10-18 | 2008-06-03 | E.I. Du Pont De Nemours And Company | Capacitive/resistive devices, organic dielectric laminates and printed wiring boards incorporating such devices, and methods of making thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3296462A (en) * | 1965-07-15 | 1967-01-03 | Fairchild Camera Instr Co | Surface field-effect device having a tunable high-pass filter property |
| FR1530106A (fr) * | 1966-08-12 | 1968-06-21 | Ibm | Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés |
| US3953875A (en) * | 1974-01-02 | 1976-04-27 | Motorola, Inc. | Capacitor structure and circuit facilitating increased frequency stability of integrated circuits |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| US4092619A (en) * | 1976-12-27 | 1978-05-30 | Intel Corporation | Mos voltage controlled lowpass filter |
| JPS5846863B2 (ja) * | 1977-08-25 | 1983-10-19 | 松下電器産業株式会社 | 半導体集積回路装置 |
| US4285001A (en) * | 1978-12-26 | 1981-08-18 | Board Of Trustees Of Leland Stanford Jr. University | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material |
-
1980
- 1980-06-06 US US06/157,452 patent/US4399417A/en not_active Expired - Lifetime
-
1981
- 1981-05-27 CA CA000378398A patent/CA1154544A/en not_active Expired
- 1981-06-01 FR FR8110782A patent/FR2484142A1/fr active Granted
- 1981-06-02 GB GB8116862A patent/GB2077496B/en not_active Expired
- 1981-06-04 DE DE19813122229 patent/DE3122229A1/de not_active Withdrawn
- 1981-06-04 IT IT22142/81A patent/IT1167456B/it active
- 1981-06-05 NL NL8102752A patent/NL8102752A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| US4399417A (en) | 1983-08-16 |
| FR2484142A1 (fr) | 1981-12-11 |
| IT1167456B (it) | 1987-05-13 |
| GB2077496A (en) | 1981-12-16 |
| CA1154544A (en) | 1983-09-27 |
| DE3122229A1 (de) | 1982-02-04 |
| GB2077496B (en) | 1984-05-02 |
| FR2484142B1 (enExample) | 1984-01-13 |
| IT8122142A0 (it) | 1981-06-04 |
| IT8122142A1 (it) | 1982-12-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |