NL8004852A - Geintegreerde, in stijgtijd geregelde, spanning- generatorstelsels. - Google Patents
Geintegreerde, in stijgtijd geregelde, spanning- generatorstelsels. Download PDFInfo
- Publication number
- NL8004852A NL8004852A NL8004852A NL8004852A NL8004852A NL 8004852 A NL8004852 A NL 8004852A NL 8004852 A NL8004852 A NL 8004852A NL 8004852 A NL8004852 A NL 8004852A NL 8004852 A NL8004852 A NL 8004852A
- Authority
- NL
- Netherlands
- Prior art keywords
- potential
- voltage
- ret
- diode
- charge pump
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 230000002441 reversible effect Effects 0.000 claims description 11
- 230000000670 limiting effect Effects 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 5
- 230000002051 biphasic effect Effects 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000011084 recovery Methods 0.000 description 12
- 238000007667 floating Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 3
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- 230000003068 static effect Effects 0.000 description 3
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- 238000006073 displacement reaction Methods 0.000 description 2
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- 230000002829 reductive effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- 239000000758 substrate Substances 0.000 description 2
- 241001280173 Crassula muscosa Species 0.000 description 1
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- 239000003708 ampul Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7149879 | 1979-08-31 | ||
| US06/071,499 US4263664A (en) | 1979-08-31 | 1979-08-31 | Nonvolatile static random access memory system |
| US7149979 | 1979-08-31 | ||
| US06/071,498 US4326134A (en) | 1979-08-31 | 1979-08-31 | Integrated rise-time regulated voltage generator systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8004852A true NL8004852A (nl) | 1981-03-03 |
Family
ID=26752295
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8004857A NL8004857A (nl) | 1979-08-31 | 1980-08-27 | Niet-vluchtig, statisch, vrij toegankelijk geheugen- stelsel. |
| NL8004852A NL8004852A (nl) | 1979-08-31 | 1980-08-27 | Geintegreerde, in stijgtijd geregelde, spanning- generatorstelsels. |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8004857A NL8004857A (nl) | 1979-08-31 | 1980-08-27 | Niet-vluchtig, statisch, vrij toegankelijk geheugen- stelsel. |
Country Status (3)
| Country | Link |
|---|---|
| GB (3) | GB2058502B (it) |
| IT (2) | IT1143098B (it) |
| NL (2) | NL8004857A (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4488060A (en) * | 1979-01-24 | 1984-12-11 | Xicor, Inc. | High voltage ramp rate control systems |
| JPS57192067A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Erasable and programmable read only memory unit |
| US4481566A (en) * | 1983-04-04 | 1984-11-06 | International Business Machines Corporation | On chip charge trap compensated high voltage converter |
| IT1215224B (it) * | 1983-08-04 | 1990-01-31 | Ates Componenti Elettron | Microcalcolatore a struttura integrata munito di memoria ram non volatile. |
| JPS61117915A (ja) * | 1984-11-13 | 1986-06-05 | Fujitsu Ltd | 遅延回路 |
| JPS63290159A (ja) * | 1987-05-20 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 昇圧回路 |
| JP2645417B2 (ja) * | 1987-09-19 | 1997-08-25 | 富士通株式会社 | 不揮発性メモリ装置 |
| NL8800287A (nl) * | 1988-02-08 | 1989-09-01 | Philips Nv | Geheugenschakeling met een uitwisbaar programmeerbaar geheugen, generator voor het opwekken van een programmeerspanning voor het geheugen, spanningsregelaar en flankregelaar, beide geschikt voor toepassing in de generator, en een diode-element. |
| FR2776838B1 (fr) * | 1998-03-26 | 2003-06-13 | Sgs Thomson Microelectronics | Procede de fabrication d'une diode de type zener a seuil variable |
-
1980
- 1980-08-27 NL NL8004857A patent/NL8004857A/nl not_active Application Discontinuation
- 1980-08-27 NL NL8004852A patent/NL8004852A/nl not_active Application Discontinuation
- 1980-08-28 GB GB8027789A patent/GB2058502B/en not_active Expired
- 1980-08-28 GB GB8027809A patent/GB2061045B/en not_active Expired
- 1980-08-29 IT IT49574/80A patent/IT1143098B/it active
- 1980-08-29 IT IT49575/80A patent/IT1188950B/it active
-
1983
- 1983-02-03 GB GB08302987A patent/GB2125215B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2125215B (en) | 1984-08-22 |
| GB2058502A (en) | 1981-04-08 |
| IT1188950B (it) | 1988-01-28 |
| IT8049575A1 (it) | 1982-03-01 |
| GB2061045A (en) | 1981-05-07 |
| GB8302987D0 (en) | 1983-03-09 |
| GB2061045B (en) | 1984-06-20 |
| GB2125215A (en) | 1984-02-29 |
| IT1143098B (it) | 1986-10-22 |
| IT8049575A0 (it) | 1980-08-29 |
| NL8004857A (nl) | 1981-03-03 |
| IT8049574A0 (it) | 1980-08-29 |
| GB2058502B (en) | 1984-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |