IT1143098B - Perfezionamento nei sistemi elettronici a circuito integrato generatori di tensione con tempo di salita regolato - Google Patents

Perfezionamento nei sistemi elettronici a circuito integrato generatori di tensione con tempo di salita regolato

Info

Publication number
IT1143098B
IT1143098B IT49574/80A IT4957480A IT1143098B IT 1143098 B IT1143098 B IT 1143098B IT 49574/80 A IT49574/80 A IT 49574/80A IT 4957480 A IT4957480 A IT 4957480A IT 1143098 B IT1143098 B IT 1143098B
Authority
IT
Italy
Prior art keywords
improvement
integrated circuit
circuit voltage
rise time
electronic systems
Prior art date
Application number
IT49574/80A
Other languages
English (en)
Other versions
IT8049574A0 (it
Inventor
William Henry Owen
Richard Thomas Simko
Wallace Edward Tchon
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/071,498 external-priority patent/US4326134A/en
Priority claimed from US06/071,499 external-priority patent/US4263664A/en
Application filed by Xicor Inc filed Critical Xicor Inc
Publication of IT8049574A0 publication Critical patent/IT8049574A0/it
Application granted granted Critical
Publication of IT1143098B publication Critical patent/IT1143098B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IT49574/80A 1979-08-31 1980-08-29 Perfezionamento nei sistemi elettronici a circuito integrato generatori di tensione con tempo di salita regolato IT1143098B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/071,498 US4326134A (en) 1979-08-31 1979-08-31 Integrated rise-time regulated voltage generator systems
US06/071,499 US4263664A (en) 1979-08-31 1979-08-31 Nonvolatile static random access memory system

Publications (2)

Publication Number Publication Date
IT8049574A0 IT8049574A0 (it) 1980-08-29
IT1143098B true IT1143098B (it) 1986-10-22

Family

ID=26752295

Family Applications (2)

Application Number Title Priority Date Filing Date
IT49575/80A IT1188950B (it) 1979-08-31 1980-08-29 Perfezionamento nei sistemi di memoria statici ad accesso casuale non volatili
IT49574/80A IT1143098B (it) 1979-08-31 1980-08-29 Perfezionamento nei sistemi elettronici a circuito integrato generatori di tensione con tempo di salita regolato

Family Applications Before (1)

Application Number Title Priority Date Filing Date
IT49575/80A IT1188950B (it) 1979-08-31 1980-08-29 Perfezionamento nei sistemi di memoria statici ad accesso casuale non volatili

Country Status (3)

Country Link
GB (3) GB2061045B (it)
IT (2) IT1188950B (it)
NL (2) NL8004852A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488060A (en) * 1979-01-24 1984-12-11 Xicor, Inc. High voltage ramp rate control systems
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
US4481566A (en) * 1983-04-04 1984-11-06 International Business Machines Corporation On chip charge trap compensated high voltage converter
IT1215224B (it) * 1983-08-04 1990-01-31 Ates Componenti Elettron Microcalcolatore a struttura integrata munito di memoria ram non volatile.
JPS61117915A (ja) * 1984-11-13 1986-06-05 Fujitsu Ltd 遅延回路
JPS63290159A (ja) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd 昇圧回路
JP2645417B2 (ja) * 1987-09-19 1997-08-25 富士通株式会社 不揮発性メモリ装置
NL8800287A (nl) * 1988-02-08 1989-09-01 Philips Nv Geheugenschakeling met een uitwisbaar programmeerbaar geheugen, generator voor het opwekken van een programmeerspanning voor het geheugen, spanningsregelaar en flankregelaar, beide geschikt voor toepassing in de generator, en een diode-element.
FR2776838B1 (fr) * 1998-03-26 2003-06-13 Sgs Thomson Microelectronics Procede de fabrication d'une diode de type zener a seuil variable

Also Published As

Publication number Publication date
GB2061045B (en) 1984-06-20
GB2125215B (en) 1984-08-22
IT1188950B (it) 1988-01-28
GB8302987D0 (en) 1983-03-09
IT8049575A0 (it) 1980-08-29
GB2061045A (en) 1981-05-07
GB2058502A (en) 1981-04-08
GB2125215A (en) 1984-02-29
IT8049574A0 (it) 1980-08-29
GB2058502B (en) 1984-02-08
NL8004852A (nl) 1981-03-03
NL8004857A (nl) 1981-03-03
IT8049575A1 (it) 1982-03-01

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