NL7801181A - Injectielaser. - Google Patents

Injectielaser.

Info

Publication number
NL7801181A
NL7801181A NL7801181A NL7801181A NL7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A
Authority
NL
Netherlands
Prior art keywords
injection laser
laser
injection
Prior art date
Application number
NL7801181A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7801181A priority Critical patent/NL7801181A/xx
Priority to US06/006,606 priority patent/US4296386A/en
Priority to EP79200052A priority patent/EP0003626B1/en
Priority to DE7979200052T priority patent/DE2963047D1/de
Priority to AU43779/79A priority patent/AU4377979A/en
Priority to ES477344A priority patent/ES477344A1/es
Priority to JP54010961A priority patent/JPS5917995B2/ja
Publication of NL7801181A publication Critical patent/NL7801181A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
NL7801181A 1978-02-02 1978-02-02 Injectielaser. NL7801181A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7801181A NL7801181A (nl) 1978-02-02 1978-02-02 Injectielaser.
US06/006,606 US4296386A (en) 1978-02-02 1979-01-26 Semiconductor injection laser having a movable laser beam
EP79200052A EP0003626B1 (en) 1978-02-02 1979-01-29 Injection laser
DE7979200052T DE2963047D1 (en) 1978-02-02 1979-01-29 Injection laser
AU43779/79A AU4377979A (en) 1978-02-02 1979-01-30 Laser
ES477344A ES477344A1 (es) 1978-02-02 1979-01-31 Un dispositivo de laser de inyeccion.
JP54010961A JPS5917995B2 (ja) 1978-02-02 1979-02-01 注入レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7801181A NL7801181A (nl) 1978-02-02 1978-02-02 Injectielaser.

Publications (1)

Publication Number Publication Date
NL7801181A true NL7801181A (nl) 1979-08-06

Family

ID=19830264

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7801181A NL7801181A (nl) 1978-02-02 1978-02-02 Injectielaser.

Country Status (7)

Country Link
US (1) US4296386A (xx)
EP (1) EP0003626B1 (xx)
JP (1) JPS5917995B2 (xx)
AU (1) AU4377979A (xx)
DE (1) DE2963047D1 (xx)
ES (1) ES477344A1 (xx)
NL (1) NL7801181A (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621964A (en) * 1982-07-06 1986-11-11 Plastic Specialties And Technologies, Inc. Valve mounting assembly for aerosol containers and the like
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
US6169757B1 (en) 1997-09-26 2001-01-02 Scott A. Merritt Intermodal phase difference controller for beam angle modulation in index guided semiconductor devices
GB2384617B (en) * 2001-10-15 2005-06-22 Arima Optoelectronic Semiconductor laser diodes
DE10312214B4 (de) * 2003-03-19 2008-11-20 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340479A (en) * 1963-06-14 1967-09-05 Bell Telephone Labor Inc Laser tunable by junction coupling
US3518574A (en) * 1964-05-01 1970-06-30 Ibm Injection laser device
US3402366A (en) * 1965-02-26 1968-09-17 Ibm Beam scanning in injection lasers
US3576586A (en) * 1968-08-05 1971-04-27 Bell & Howell Co Variable area injection luminescent device
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
US3702975A (en) * 1970-12-09 1972-11-14 Bell Telephone Labor Inc Low threshold stripe geometry injection laser
US3978507A (en) * 1972-07-13 1976-08-31 U.S. Philips Corporation Electroluminescent device having localized emission
JPS52116185A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Mesa-type semiconductor laser

Also Published As

Publication number Publication date
US4296386A (en) 1981-10-20
DE2963047D1 (en) 1982-07-29
ES477344A1 (es) 1979-07-01
JPS5917995B2 (ja) 1984-04-24
EP0003626A1 (en) 1979-08-22
AU4377979A (en) 1979-08-09
JPS54114095A (en) 1979-09-05
EP0003626B1 (en) 1982-06-09

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BV The patent application has lapsed