DE2963047D1 - Injection laser - Google Patents
Injection laserInfo
- Publication number
- DE2963047D1 DE2963047D1 DE7979200052T DE2963047T DE2963047D1 DE 2963047 D1 DE2963047 D1 DE 2963047D1 DE 7979200052 T DE7979200052 T DE 7979200052T DE 2963047 T DE2963047 T DE 2963047T DE 2963047 D1 DE2963047 D1 DE 2963047D1
- Authority
- DE
- Germany
- Prior art keywords
- injection laser
- laser
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7801181A NL7801181A (nl) | 1978-02-02 | 1978-02-02 | Injectielaser. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2963047D1 true DE2963047D1 (en) | 1982-07-29 |
Family
ID=19830264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE7979200052T Expired DE2963047D1 (en) | 1978-02-02 | 1979-01-29 | Injection laser |
Country Status (7)
Country | Link |
---|---|
US (1) | US4296386A (de) |
EP (1) | EP0003626B1 (de) |
JP (1) | JPS5917995B2 (de) |
AU (1) | AU4377979A (de) |
DE (1) | DE2963047D1 (de) |
ES (1) | ES477344A1 (de) |
NL (1) | NL7801181A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621964A (en) * | 1982-07-06 | 1986-11-11 | Plastic Specialties And Technologies, Inc. | Valve mounting assembly for aerosol containers and the like |
US4878222A (en) * | 1988-08-05 | 1989-10-31 | Eastman Kodak Company | Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot |
US6169757B1 (en) | 1997-09-26 | 2001-01-02 | Scott A. Merritt | Intermodal phase difference controller for beam angle modulation in index guided semiconductor devices |
GB2384617B (en) * | 2001-10-15 | 2005-06-22 | Arima Optoelectronic | Semiconductor laser diodes |
DE10312214B4 (de) * | 2003-03-19 | 2008-11-20 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von mindestens einer Mesa- oder Stegstruktur oder von mindestens einem elektrisch gepumpten Bereich in einer Schicht oder Schichtenfolge |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3340479A (en) * | 1963-06-14 | 1967-09-05 | Bell Telephone Labor Inc | Laser tunable by junction coupling |
US3518574A (en) * | 1964-05-01 | 1970-06-30 | Ibm | Injection laser device |
US3402366A (en) * | 1965-02-26 | 1968-09-17 | Ibm | Beam scanning in injection lasers |
US3576586A (en) * | 1968-08-05 | 1971-04-27 | Bell & Howell Co | Variable area injection luminescent device |
US3701044A (en) * | 1970-06-29 | 1972-10-24 | Bell Telephone Labor Inc | Optical coupling of adjacent stripe contact geometry semiconductor lasers |
US3702975A (en) * | 1970-12-09 | 1972-11-14 | Bell Telephone Labor Inc | Low threshold stripe geometry injection laser |
US3978507A (en) * | 1972-07-13 | 1976-08-31 | U.S. Philips Corporation | Electroluminescent device having localized emission |
JPS52116185A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Mesa-type semiconductor laser |
-
1978
- 1978-02-02 NL NL7801181A patent/NL7801181A/xx not_active Application Discontinuation
-
1979
- 1979-01-26 US US06/006,606 patent/US4296386A/en not_active Expired - Lifetime
- 1979-01-29 DE DE7979200052T patent/DE2963047D1/de not_active Expired
- 1979-01-29 EP EP79200052A patent/EP0003626B1/de not_active Expired
- 1979-01-30 AU AU43779/79A patent/AU4377979A/en not_active Abandoned
- 1979-01-31 ES ES477344A patent/ES477344A1/es not_active Expired
- 1979-02-01 JP JP54010961A patent/JPS5917995B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU4377979A (en) | 1979-08-09 |
NL7801181A (nl) | 1979-08-06 |
JPS54114095A (en) | 1979-09-05 |
ES477344A1 (es) | 1979-07-01 |
US4296386A (en) | 1981-10-20 |
EP0003626B1 (de) | 1982-06-09 |
EP0003626A1 (de) | 1979-08-22 |
JPS5917995B2 (ja) | 1984-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |