Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/68—Floating-gate IGFETs
  • H10D30/681—Floating-gate IGFETs having only two programming levels
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Non-Volatile Memory (AREA)
• Semiconductor Integrated Circuits (AREA)
• Semiconductor Memories (AREA)
• Read Only Memory (AREA)
• Thyristors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=24147887

Family Applications (1)

Country Status (5)

Families Citing this family (6)

Family Cites Families (1)

• 1975
  • 1975-12-11 GB GB50815/75A patent/GB1480201A/en not_active Expired
  • 1975-12-24 DE DE19752558626 patent/DE2558626A1/de active Pending
• 1976
  • 1976-01-05 JP JP75376A patent/JPS5193680A/ja active Pending
  • 1976-01-05 FR FR7600060A patent/FR2296939A1/fr active Granted
  • 1976-01-05 NL NL7600049A patent/NL7600049A/xx unknown

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