FR2296939B1 - - Google Patents
Info
- Publication number
- FR2296939B1 FR2296939B1 FR7600060A FR7600060A FR2296939B1 FR 2296939 B1 FR2296939 B1 FR 2296939B1 FR 7600060 A FR7600060 A FR 7600060A FR 7600060 A FR7600060 A FR 7600060A FR 2296939 B1 FR2296939 B1 FR 2296939B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53866275A | 1975-01-06 | 1975-01-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2296939A1 FR2296939A1 (fr) | 1976-07-30 |
| FR2296939B1 true FR2296939B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-06-30 |
Family
ID=24147887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7600060A Granted FR2296939A1 (fr) | 1975-01-06 | 1976-01-05 | Dispositif semi-conducteur a quatre zones |
Country Status (5)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| US4398338A (en) * | 1980-12-24 | 1983-08-16 | Fairchild Camera & Instrument Corp. | Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques |
| JPS59211271A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | 半導体装置 |
| JPS59213167A (ja) * | 1983-05-19 | 1984-12-03 | Nec Corp | サイリスタ |
| GB2179219B (en) * | 1985-06-07 | 1989-04-19 | Anamartic Ltd | Electrical data storage elements |
| US7224002B2 (en) * | 2004-05-06 | 2007-05-29 | Micron Technology, Inc. | Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949581A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-09-16 | 1974-05-14 |
-
1975
- 1975-12-11 GB GB50815/75A patent/GB1480201A/en not_active Expired
- 1975-12-24 DE DE19752558626 patent/DE2558626A1/de active Pending
-
1976
- 1976-01-05 JP JP75376A patent/JPS5193680A/ja active Pending
- 1976-01-05 FR FR7600060A patent/FR2296939A1/fr active Granted
- 1976-01-05 NL NL7600049A patent/NL7600049A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1480201A (en) | 1977-07-20 |
| FR2296939A1 (fr) | 1976-07-30 |
| DE2558626A1 (de) | 1976-07-08 |
| JPS5193680A (en) | 1976-08-17 |
| NL7600049A (nl) | 1976-07-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |