NL7504306A - Halfgeleider-schakeling. - Google Patents

Halfgeleider-schakeling.

Info

Publication number
NL7504306A
NL7504306A NL7504306A NL7504306A NL7504306A NL 7504306 A NL7504306 A NL 7504306A NL 7504306 A NL7504306 A NL 7504306A NL 7504306 A NL7504306 A NL 7504306A NL 7504306 A NL7504306 A NL 7504306A
Authority
NL
Netherlands
Prior art keywords
semiconductor connection
semiconductor
connection
Prior art date
Application number
NL7504306A
Other languages
English (en)
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4146474A external-priority patent/JPS555268B2/ja
Priority claimed from JP49052121A external-priority patent/JPS50145089A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7504306A publication Critical patent/NL7504306A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
NL7504306A 1974-04-10 1975-04-10 Halfgeleider-schakeling. NL7504306A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4146474A JPS555268B2 (en:Method) 1974-04-10 1974-04-10
JP49052121A JPS50145089A (en:Method) 1974-05-10 1974-05-10

Publications (1)

Publication Number Publication Date
NL7504306A true NL7504306A (nl) 1975-10-14

Family

ID=26381084

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7504306A NL7504306A (nl) 1974-04-10 1975-04-10 Halfgeleider-schakeling.

Country Status (7)

Country Link
US (1) US4000506A (en:Method)
CA (1) CA1026468A (en:Method)
DE (1) DE2515577C2 (en:Method)
FR (1) FR2267641B1 (en:Method)
GB (1) GB1502165A (en:Method)
IT (1) IT1037228B (en:Method)
NL (1) NL7504306A (en:Method)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
GB2132016B (en) * 1982-12-07 1986-06-25 Kokusai Denshin Denwa Co Ltd A semiconductor device
EP0166923A3 (en) * 1984-06-29 1987-09-30 International Business Machines Corporation High performance bipolar transistor having a lightly doped guard ring disposed between the emitter and the extrinsic base region
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
JP2002511195A (ja) * 1998-02-09 2002-04-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バイポーラトランジスタを具える半導体デバイス及び該デバイスの製造方法
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (en:Method) * 1959-02-12
BE547227A (en:Method) * 1955-04-21
NL242787A (en:Method) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices

Also Published As

Publication number Publication date
US4000506A (en) 1976-12-28
DE2515577C2 (de) 1986-01-02
FR2267641A1 (en:Method) 1975-11-07
IT1037228B (it) 1979-11-10
CA1026468A (en) 1978-02-14
GB1502165A (en) 1978-02-22
FR2267641B1 (en:Method) 1978-09-01
DE2515577A1 (de) 1975-10-23

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Legal Events

Date Code Title Description
BV The patent application has lapsed