BE547227A - - Google Patents

Info

Publication number
BE547227A
BE547227A BE547227DA BE547227A BE 547227 A BE547227 A BE 547227A BE 547227D A BE547227D A BE 547227DA BE 547227 A BE547227 A BE 547227A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE547227A publication Critical patent/BE547227A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/032Diffusion length
BE547227D 1955-04-21 BE547227A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL103476 1955-04-21

Publications (1)

Publication Number Publication Date
BE547227A true BE547227A (en:Method)

Family

ID=32041035

Family Applications (1)

Application Number Title Priority Date Filing Date
BE547227D BE547227A (en:Method) 1955-04-21

Country Status (5)

Country Link
US (1) US2822310A (en:Method)
BE (1) BE547227A (en:Method)
CH (1) CH342295A (en:Method)
FR (1) FR1153884A (en:Method)
NL (1) NL103476C (en:Method)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981645A (en) * 1955-04-22 1961-04-25 Ibm Semiconductor device fabrication
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
NL240883A (en:Method) * 1958-07-17
NL242787A (en:Method) * 1958-09-05
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
JPS5147583B2 (en:Method) * 1972-12-29 1976-12-15
JPS5147584B2 (en:Method) * 1972-12-29 1976-12-15
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
JPS5754969B2 (en:Method) * 1974-04-04 1982-11-20
JPS5753672B2 (en:Method) * 1974-04-10 1982-11-13
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
JPS57658B2 (en:Method) * 1974-04-16 1982-01-07
JPS5714064B2 (en:Method) * 1974-04-25 1982-03-20
JPS5718710B2 (en:Method) * 1974-05-10 1982-04-17
JPS5648983B2 (en:Method) * 1974-05-10 1981-11-19

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
US2697052A (en) * 1953-07-24 1954-12-14 Bell Telephone Labor Inc Fabricating of semiconductor translating devices

Also Published As

Publication number Publication date
CH342295A (de) 1959-11-15
FR1153884A (fr) 1958-03-28
NL103476C (en:Method)
US2822310A (en) 1958-02-04

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