JPS5147584B2 - - Google Patents

Info

Publication number
JPS5147584B2
JPS5147584B2 JP48000551A JP55173A JPS5147584B2 JP S5147584 B2 JPS5147584 B2 JP S5147584B2 JP 48000551 A JP48000551 A JP 48000551A JP 55173 A JP55173 A JP 55173A JP S5147584 B2 JPS5147584 B2 JP S5147584B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48000551A
Other languages
Japanese (ja)
Other versions
JPS4991192A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48000551A priority Critical patent/JPS5147584B2/ja
Priority to AU63787/73A priority patent/AU488375B2/en
Priority to GB5908973A priority patent/GB1455260A/en
Priority to DK702173A priority patent/DK138248C/da
Priority to DE2364753A priority patent/DE2364753C2/de
Priority to CH1814273A priority patent/CH570047A5/de
Priority to AT1084073A priority patent/AT377645B/de
Priority to ES421873A priority patent/ES421873A1/es
Priority to NLAANVRAGE7317814,A priority patent/NL182764C/xx
Priority to CA189,081A priority patent/CA1006624A/en
Priority to FR7347071A priority patent/FR2212644B1/fr
Priority to BE2053326A priority patent/BE809217A/xx
Priority to BR10282/73A priority patent/BR7310282D0/pt
Priority to SE7317519A priority patent/SE398941B/xx
Priority to NO4981/73A priority patent/NO140843C/no
Priority to IT32382/73A priority patent/IT1002416B/it
Publication of JPS4991192A publication Critical patent/JPS4991192A/ja
Priority to US05/569,309 priority patent/US4032956A/en
Priority to US05/620,293 priority patent/US4032957A/en
Priority to US05/622,527 priority patent/US4032958A/en
Priority to US05/654,758 priority patent/US4038680A/en
Priority to CA265,092A priority patent/CA1021466A/en
Publication of JPS5147584B2 publication Critical patent/JPS5147584B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Debugging And Monitoring (AREA)
JP48000551A 1972-12-29 1972-12-29 Expired JPS5147584B2 (en:Method)

Priority Applications (21)

Application Number Priority Date Filing Date Title
JP48000551A JPS5147584B2 (en:Method) 1972-12-29 1972-12-29
AU63787/73A AU488375B2 (en) 1972-12-29 1973-12-19 Semiconductor device
GB5908973A GB1455260A (en) 1972-12-29 1973-12-20 Semiconductor devices
DK702173A DK138248C (da) 1972-12-29 1973-12-21 Halvlederelement
DE2364753A DE2364753C2 (de) 1972-12-29 1973-12-27 Halbleiterbauelement
CH1814273A CH570047A5 (en:Method) 1972-12-29 1973-12-27
AT1084073A AT377645B (de) 1972-12-29 1973-12-27 Halbleiterbauteil
FR7347071A FR2212644B1 (en:Method) 1972-12-29 1973-12-28
IT32382/73A IT1002416B (it) 1972-12-29 1973-12-28 Dispositivo semiconduttore
NLAANVRAGE7317814,A NL182764C (nl) 1972-12-29 1973-12-28 Halfgeleiderinrichting met tenminste drie opeenvolgende halfgeleidergebieden met afwisselend geleidingstype.
CA189,081A CA1006624A (en) 1972-12-29 1973-12-28 Semiconductor device
ES421873A ES421873A1 (es) 1972-12-29 1973-12-28 Dispositivo semiconductor de varias uniones.
BE2053326A BE809217A (fr) 1972-12-29 1973-12-28 Dispositif semi-conducteur
BR10282/73A BR7310282D0 (pt) 1972-12-29 1973-12-28 Aperfeicoamento em dispositivo semicondutor de juncoes multiplas
SE7317519A SE398941B (sv) 1972-12-29 1973-12-28 Halvledardon avsett att minimera stromdiffusion av minoritetsladdningsberare fran bas till emitter under tillstand med forspenning i ledriktningen
NO4981/73A NO140843C (no) 1972-12-29 1973-12-28 Halvlederanordning.
US05/569,309 US4032956A (en) 1972-12-29 1975-04-17 Transistor circuit
US05/620,293 US4032957A (en) 1972-12-29 1975-10-07 Semiconductor device
US05/622,527 US4032958A (en) 1972-12-29 1975-10-15 Semiconductor device
US05/654,758 US4038680A (en) 1972-12-29 1976-02-03 Semiconductor integrated circuit device
CA265,092A CA1021466A (en) 1972-12-29 1976-11-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000551A JPS5147584B2 (en:Method) 1972-12-29 1972-12-29

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP51072974A Division JPS5252374A (en) 1976-06-21 1976-06-21 Semiconductor device
JP51072973A Division JPS5252373A (en) 1976-06-21 1976-06-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS4991192A JPS4991192A (en:Method) 1974-08-30
JPS5147584B2 true JPS5147584B2 (en:Method) 1976-12-15

Family

ID=11476845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48000551A Expired JPS5147584B2 (en:Method) 1972-12-29 1972-12-29

Country Status (14)

Country Link
JP (1) JPS5147584B2 (en:Method)
BE (1) BE809217A (en:Method)
BR (1) BR7310282D0 (en:Method)
CA (1) CA1006624A (en:Method)
CH (1) CH570047A5 (en:Method)
DE (1) DE2364753C2 (en:Method)
DK (1) DK138248C (en:Method)
ES (1) ES421873A1 (en:Method)
FR (1) FR2212644B1 (en:Method)
GB (1) GB1455260A (en:Method)
IT (1) IT1002416B (en:Method)
NL (1) NL182764C (en:Method)
NO (1) NO140843C (en:Method)
SE (1) SE398941B (en:Method)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (en:Method) * 1974-04-04 1982-11-20
JPS5753672B2 (en:Method) * 1974-04-10 1982-11-13
JPS57658B2 (en:Method) * 1974-04-16 1982-01-07
JPS5714064B2 (en:Method) * 1974-04-25 1982-03-20
JPS5648983B2 (en:Method) * 1974-05-10 1981-11-19
JPS5718710B2 (en:Method) * 1974-05-10 1982-04-17
JPS5426789Y2 (en:Method) * 1974-07-23 1979-09-03
GB2130006A (en) * 1982-10-27 1984-05-23 Vladimir Avraamovic Smolyansky Bipolar semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547227A (en:Method) * 1955-04-21
US2806983A (en) * 1956-06-01 1957-09-17 Gen Electric Remote base transistor
NL242787A (en:Method) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing

Also Published As

Publication number Publication date
BR7310282D0 (pt) 1974-08-15
CA1006624A (en) 1977-03-08
NO140843C (no) 1979-11-21
FR2212644B1 (en:Method) 1976-10-08
NL7317814A (en:Method) 1974-07-02
CH570047A5 (en:Method) 1975-11-28
GB1455260A (en) 1976-11-10
IT1002416B (it) 1976-05-20
FR2212644A1 (en:Method) 1974-07-26
DK138248B (da) 1978-07-31
DK138248C (da) 1979-01-08
BE809217A (fr) 1974-04-16
NL182764B (nl) 1987-12-01
DE2364753A1 (de) 1974-07-18
AU6378773A (en) 1975-06-19
NL182764C (nl) 1988-05-02
DE2364753C2 (de) 1984-01-12
NO140843B (no) 1979-08-13
SE398941B (sv) 1978-01-23
ES421873A1 (es) 1976-08-01
JPS4991192A (en:Method) 1974-08-30

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