GB2130006A - Bipolar semiconductor device - Google Patents
Bipolar semiconductor device Download PDFInfo
- Publication number
- GB2130006A GB2130006A GB08230716A GB8230716A GB2130006A GB 2130006 A GB2130006 A GB 2130006A GB 08230716 A GB08230716 A GB 08230716A GB 8230716 A GB8230716 A GB 8230716A GB 2130006 A GB2130006 A GB 2130006A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- regions
- injection
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000002347 injection Methods 0.000 claims abstract description 44
- 239000007924 injection Substances 0.000 claims abstract description 44
- 239000002800 charge carrier Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000015556 catabolic process Effects 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 102000057593 human F8 Human genes 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229940047431 recombinate Drugs 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A bipolar semiconductor device comprising two regions (1, 2) of the same type of conductivity, one of which serves as a collector region (1 or 2) and the other as an emitter region (2 or 1). A base region (3) is interposed between the former and the latter and connected to a region (4) intended to isolate the collector region (1 or 2) from the emitter region (2 or 1). At least one injection region (7) is provided in the collector region (1 or 2) and/or the emitter region (2 or 1). The conductivity type of the injection region (7) corresponds to that of the base region (3). The distance between the injection region (7) and the base region (3) is I1 > I > I2, where I1 is a distance equal to 1 + 2 diffusion lengths of minority charge carriers in the collector and emitter regions (1, 2) where the injection region (7) is found, and I2 is a minimum distance for specified breakdown voltage between the injection region (7) and base region (3). A contact window (10) is provided in a passivating layer (8) over the injection region (7). Through this window (10), the injection region (7) is connected to a metal control contact (13). <IMAGE>
Description
SPECIFICATION
Bipolar semiconductor device
The present invention relates to semiconductor devices and, more particularly, to bipolar semiconductor devices.
The invention is readily applicable to the manufacture of bipolar semiconductor silicon devices intended for switching a.c. voltage circuits, forming steep pulses of the opposite polarity, and protecting electric circuits from overloads.
The invention provides a bipolar semiconductor device comprising two regions of the same type of conductivity, one of which serves as a collector region and the other as an emitter region, depending on the polarity of applied voltage, a base region interposed between the collector and emitter regions, a region intended to isolate the collector region from the emitter region, arranged on the periphery of at least one of these regions and connected to the base region, two contact regions, one of which is found in the collector region and the other in the emitter region, a passivating layer on a collector or emitter region and on a respective contact region, having a contact window over this contact region, two metal contacts, each electrically connected to a respective contact region, and a metal control contact electrically connected to the base region, the device being characterized, according to the invention, in that the collector and/or emitter region has at least one injection region of a conductivity type corresponding to that of the base region, the distance between the injection and base regions being l# > I > 12, where I1 is a distance equal to 1 + 2 diffusion lengths of minority charge carriers of the collector or emitter region in which injection region is found; and 12 is a minimum distance for specified breakdown voltage between the injection and base regions,
a contact window being provided in the passivating layer over the injection region, the metal control contact being connected through the contact window to the injection region.
If a plurality of injection regions are provided, some of which are found in the collector region and some in the emitter region, it is expedient that the bipolar semiconductor device should incorporate control emitter regions of a conductivity type opposite to that of the injection regions, each of the control emitter regions being found in a respective injection region, the contact windows in the passivating layer over the injection regions being also over the control emitter regions.
The bipolar semiconductor device according to
the invention can be switched off irrespective of
the polarity of voltage applied thereto.
A better understanding of the present invention will be had from a consideration of the following detailed description of preferred embodiments thereof, taken in conjunction with the accompanying drawings, wherein:
FIG. 1 is a general cross-sectional view of a bipolar semiconductor device in accordance with the invention;
FIG. 2 is a general cross-sectional view of a bipolar semiconductor device in accordance with the invention, having a plurality of injection regions with control emitter regions;
FIG. 3 is a view in the direction of arrow A in
FIG. 1 of an injection region with a control emitter region and with a cut-away portion of a metal control contact.
Referring to the attached drawings, the bipolar semiconductor device of this invention comprises regions 1 and 2 (FIG. 1), one of which serves as a collector region and the other as an emitter region, depending on the polarity of voltage applied to the device. The region 1 may be of monocrystalline n-type silicon with an impurity concentration of about 0.5 + 20 1014 cm-3. The region 2 may be of the same, epitaxially grown, material. A base region 3 is interposed between the regions 1 and 2; it is produced prior to the epitaxial growth of the region 2, by ion-implanted doping of the region 1 with an acceptor impurity. The base region 3 is connected to a region 4 which is intended for isolation of the collector and emitter regions 1 and 2 (2 and 1).
The regions 1 and 2 have contact regions 5 and
6, respectively, in which the concentration of an impurity, such as phosphorus, may be as high as
1021 cm#3. In the region 2 there is an injection
region 7 of a conductivity type corresponding to that of the base region 3. The distance between the regions 3 and 7 is i1 > I > 12, where Ii is a distance equal to 1 + 2 diffusion lengths of
minority charge carriers of the region 2, and 12 is a
minimum distance from specified breakdown voltage between the base region 3 and the
injection region 7. A passivating layer 8 is
provided on the region 2, contact region 6 and
region 7. The layer 8 has contact windows 9 and
10 over the regions 6 and 7, respectively.
Metal contacts 1 1 and 12 are connected to the
region 5 and through the window 9 to the region
6. A metal control contact 13 is connected to the
region 7 through the window 10. A load resistor
14 is connected with its lead 15 to the contact 11.
A lead 1 6 of the resistor 14 and the contact 12
are connected to a power source 1 7. A ballast
resistor 18 is connected with its lead 19 to the
contact 13. A lead 20 of the resistor 18 and the
contact 12 are connected to a power source 21.
According to an alternative embodiment of the
invention, the bipolar semiconductor device has
injection regions 22 and 23 (FIG. 2) in the region
1, and injection regions 24 and 25 in the region 2.
The distance between the regions 22, 23, 24
and 25 and the base region 3 is 1, < I > i2, where 12
is a distance equal to 1 + 2 diffusion lengths of
minority charge carriers of the region 1 (for the regions 22 and 23) and the region 2 (for the regions 24 and 25), and 12 is a minimum distance for specified breakdown voltage between the regions 22, 23, 24, 25 and the base region 3. The regions 22 and 24 have control emitter regions 26, 27, respectively. In the region 1, the passivating layer 8 has a window 28 over the region 5, a window 29 over the region 23, and a window 30 over the regions 26 and 22 (FIGS. 2 and 3). A metal control contact 31 is connected to the region 23 through the window 29.A metal control contact 32 is connected to the regions 22 and 26 through the window 30. In the region 2, the passivating layer 8 has a window 33 over the region 25, and a window 34 over the regions 24 and 27. A metal control contact 35 is connected to the region 25 through the window 33. A metal control contact 36 is connected to the regions 24 and 27 through the window 34.
Ballast resistors 37, 38 and 39 are connected with their leads 40, 41 and 42, respectively, to the contacts 31,32 and 35, respectively.
A lead 43 of the resistor 37 and the contact 1 1 are connected to a pulse generator 44. A lead 45 of the resistor 39 and the contact 12 are connected to a pulse generator 46. A lead 47 and the contact 36 are connected to a control voltage source 48 which is cophasal with the source 17.
Voltage of the source 48 is lower than that of the source 17.
The bipolar semiconductor device of this invention operates as follows.
As the power source 21 (FIG. 1) applies cutoff voltage to the lead 20 of the ballast resistor 18, the bipolar semiconductor device is cut off.
Positive voltage applied by the source 17 to the contact 11 is cut off by the p-n junction between the region 1 and the base region 3. Negative voltage applied by the source 17 to the contact 1 1 is cut-off by the p-n junction between the base region 3 and region 2. This is due to the fact that the depletion region in the region 2 covers the space between the region 3 and the injection region 4 and produces an isolating gap between them.
According to the invention, the distance I between the regions 3 and 7 is greater than 12 (I > 12), where 12 is a minimum distance for specified breakdown voltage between the regions 3 and 7.
As the power source 21 applies cut-on voltage to the lead 20 of the ballast resistor 1 8, voltage is applied through the lead 19 of the resistor 18 to the contact 13. This voltage produces an injection of minority charge carriers from the region 7 into the region 2. From the region 2, a smaller proportion of the minority charge carriers proceeds to the contact region 6 to recombinate with majority charge carriers. A greater proportion of the minority charge carriers proceeds through the region 2 to accumulate in the region 3. This is due to the distance between the regions 3 and 7, which, according to the invention is determined by the expression I < 11, where 11 is a distance equal to 1 + 2 diffusion lengths of minority charge carriers of the region 2.In the region 3, minority charge carriers at first move parallel with the region 6, towards its center. With positive voltage across the contact 1 1, minority charge carriers are again injected into the region 2 and accumulate on the boundary between the regions 6 and 2. The accumulation causes an injection of majority charge carriers from the region 6; these traverse the regions 2 and 3 to accumulate in the region 1.
As negative voltage is applied to the contact 11, minority charge carriers are injected from the region 3 into the region 1 and accumulate on the boundary between the regions 5 and 1. Following this, majority charge carriers are injected from the region 5 through the regions 1 and 3 into the region 2. Such a transfer of majority and minority charge carriers produces a flow of current from the source 17 to the bipolar semiconductor device and the load resistor 14.
As the supply of cut-on voltage from the source 21 is discontinued, the bipolar semiconductor device assumes an "off" state, which is due to a discontinuation of the transfer of minority charge carriers to the base region 3 and of the injection of majority charge carriers by the regions 5 and 6.
A pulsed turn-on/turn-off of the bipolar semiconductor device is done as follows.
Before cut-on voltage is applied from the source 44 (FIGS. 2 and 3) to the lead 43 of the resistor 37, or from the generator 46 to the lead 45 of the resistor 39, the bipolar semiconductor device is off. There is no flow of current from the source 48 through the lead 47 of the resistor 38, because voltage of the source 1 7 is higher than that of the source 48. Positive voltage across the contacts 1 1 and 32 accounts for a reverse bias of the p-n junction formed by the injection region 22 and the region 1; positive voltage across the contacts 12 and 36 accounts for a reverse bias of the #n junction formed by the injection region 24 and the region 2.
As cut-on voltage is applied from the source 44 to the lead 43 of the resistor 37 or from the source 46 to the lead 45 of the resistor 39, the bipolar semiconductor device is switched on and operates as described above. With positive voltage across the contact 11, voltage between the contacts 11 and 12 is reduced, and the p-n junction formed by the regions 22 and 1 conducts current.
Minority charge carriers injected by the region 22 proceed through the region 1 to the base region 3.
From the latter, minority charge carriers are injected into the region 1 and proceed through it towards the injection region 24 and the contact region 6. The minority charge carriers accumulated in the region 24 cause an injection of majority charge carriers by the control emitter region 27. As a result, the gap between the regions 22 and 27 is saturated with charge carriers of both types, the resistance of this gap is reduced, and there is a steady flow of current between the contacts 32 and 36. Minority charge carriers injected towards the region 6 cause an injection by the region 6 of majority charge carriers which traverse the regions 2 and 3 and accumulate in the region 1.A continued supply of cut-on voltage from the generator 44 to the lead 43 of the resistor 37 or from the generator 46 to the lead 45 of the resistor 39 is not indispensable for a continued and stable "on" state of the device, because cut-on voltage is supplied by the source 48.
With positive voltage across the contacts 12 and 36, the bipolar semiconductor device operates as described above, provided there is a symmetrical arrangement of the regions 1 and 2, contact regions 5 and 6, injection regions 22 and 24, and control emitter regions 26 and 27.
With an increased ratio between the current through the metal contacts 1 1 and 12 and the current through the contacts 32 and 36 in the case of positive voltage across the contacts 11 and 32, the degree of saturation of the region 1 with minority charge carriers is reduced, but the width of the depleted zone of the p-n junction between the region 1 and the base region 3 increases, leading to an increase of voltage in the region 1. The current of the minority charge carriers injected by the region 22 is reduced and there starts a regenerative process of reducing current through the contacts 11 and 32; the end of this process is a steady "off" state of the bipolar semiconductor device.
With negative voltage across the contacts 12 and 36, the bipolar semiconductor device operates as described above, provided there is a symmetrical arrangement of the regions 1 and 2, contact regions 5 and 6, regions 22 and 24, and control emitter regions 26 and 27.
The bipolar semiconductor device is switched off either by reducing the voltage of the power source 48 or by increasing the resistance of the resistor 38 and reducing the flow of current from the lead 41 of the resistor 38 through the contacts 32 and 36. As a result, the ratio between the current through the metal contacts 1 1 and 12 and the current through the contacts 32 and 36 increases, and the bipolar semiconductor device is switched off as described above.
In order to protect the load resistor 14 from a current overload of a specified level, the resistance of the resistor 38 and the voltage of the power source 48 are selected so that the process of switching off the bipolar semiconductor device starts with a specified magnitude of current through the load resistor 14; the magnitude of the working current flowing through the load resistor 14 is selected to be lower than a specified current overload level, so there is a safety margin. In case of a current overload equal to or higher than a specified level, there is an increase in the ratio between the current through the metal contacts 1 1 and 12 and the current through the contacts 32 and 36, whereby the bipolar semiconductor device is switched off as described above.
The present invention provides for automatic protection of the bipolar semiconductor device, power source and load resistor from current overloads in emergency Fituations.
Claims (3)
1. A bipolar semiconductor device comprising two regions of the same type of conductivity, one of which serves as a collector region and the other as an emitter region, depending on the applied voltage polarity; a base region interposed between the collector and emitter regions; a region intended to isolate the collector region from the emitter region, arranged on the periphery of at least one of these regions and connected to the base region; two contact regions, one of which is found in the collector region and the other in the emitter region; at least one injection region provided in the collector and/or emitter region, whose conductivity type correspond to that of the base region, the distance between the injection and base regions being 11 > 1 > 12' where i7 is a distance equal to 1 + 2 diffusion lengths of minority charge carriers of the collector or emitter region in which the injection region is found; and 12 is a minimum distance for specified breakdown voltage between the injection and base regions;
a passivating layer on the collector or emitter region and on a respective contact region, having contact windows over this contact region and the injection region; two metal contacts, each electrically connected to a respective contact region; a metal control contact connected through the contact window to the injection region.
2. A bipolar semiconductor device as claimed in claim 1, which has a plurality of injection regions some of which are found in the collector region, while the others are found in the emitter region, and therefore contains control emitter regions of a conductivity type opposite to that of the injection regions, each of the control emitter regions being found in a respective injection region, contact windows in the passivating layer, corresponding to the injection regions, being provided over both the injection regions and the control emitter regions.
3. A bipolar semiconductor device, substantially as hereinbefore described with reference to the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08230716A GB2130006A (en) | 1982-10-27 | 1982-10-27 | Bipolar semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08230716A GB2130006A (en) | 1982-10-27 | 1982-10-27 | Bipolar semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2130006A true GB2130006A (en) | 1984-05-23 |
Family
ID=10533874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08230716A Withdrawn GB2130006A (en) | 1982-10-27 | 1982-10-27 | Bipolar semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2130006A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1542287A1 (en) * | 2003-12-09 | 2005-06-15 | Infineon Technologies AG | High-frequency bipolar transistor |
| US7247926B2 (en) | 2003-12-09 | 2007-07-24 | Infineon Technologies Ag | High-frequency switching transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB905413A (en) * | 1957-11-29 | 1962-09-05 | Comp Generale Electricite | Improvements in or relating to semi-conductor devices |
| GB1455260A (en) * | 1972-12-29 | 1976-11-10 | Sony Corp | Semiconductor devices |
-
1982
- 1982-10-27 GB GB08230716A patent/GB2130006A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB905413A (en) * | 1957-11-29 | 1962-09-05 | Comp Generale Electricite | Improvements in or relating to semi-conductor devices |
| GB1455260A (en) * | 1972-12-29 | 1976-11-10 | Sony Corp | Semiconductor devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1542287A1 (en) * | 2003-12-09 | 2005-06-15 | Infineon Technologies AG | High-frequency bipolar transistor |
| US7247926B2 (en) | 2003-12-09 | 2007-07-24 | Infineon Technologies Ag | High-frequency switching transistor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |