JPS5718710B2 - - Google Patents
Info
- Publication number
 - JPS5718710B2 JPS5718710B2 JP5211974A JP5211974A JPS5718710B2 JP S5718710 B2 JPS5718710 B2 JP S5718710B2 JP 5211974 A JP5211974 A JP 5211974A JP 5211974 A JP5211974 A JP 5211974A JP S5718710 B2 JPS5718710 B2 JP S5718710B2
 - Authority
 - JP
 - Japan
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Expired
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
 - H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
 - H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
 - H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
 - H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
 - H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
 - H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
 - H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
 - H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
 - H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
 - H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
 - H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
 - H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
 - H10D84/401—Combinations of FETs or IGBTs with BJTs
 - H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
 - H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D99/00—Subject matter not provided for in other groups of this subclass
 
 
Landscapes
- Bipolar Transistors (AREA)
 - Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
 
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP5211974A JPS5718710B2 (en:Method) | 1974-05-10 | 1974-05-10 | |
| US05/571,708 US3955154A (en) | 1974-05-10 | 1975-04-25 | Oscillator circuit | 
| CA225,488A CA1029821A (en) | 1974-05-10 | 1975-04-25 | Oscillator circuit | 
| AU80652/75A AU489003B2 (en) | 1974-05-10 | 1975-04-30 | Oscillator circuit | 
| GB18509/75A GB1505376A (en) | 1974-05-10 | 1975-05-02 | Oscillator circuits | 
| NL7505426A NL7505426A (nl) | 1974-05-10 | 1975-05-07 | Oscillatorschakeling. | 
| FR7514457A FR2270712B1 (en:Method) | 1974-05-10 | 1975-05-07 | |
| DE2520825A DE2520825C2 (de) | 1974-05-10 | 1975-05-09 | Oszillator | 
| ES437556A ES437556A1 (es) | 1974-05-10 | 1975-05-09 | Oscilador. | 
| AT0358975A AT374975B (de) | 1974-05-10 | 1975-05-12 | Oszillator | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP5211974A JPS5718710B2 (en:Method) | 1974-05-10 | 1974-05-10 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS50145087A JPS50145087A (en:Method) | 1975-11-21 | 
| JPS5718710B2 true JPS5718710B2 (en:Method) | 1982-04-17 | 
Family
ID=12905973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP5211974A Expired JPS5718710B2 (en:Method) | 1974-05-10 | 1974-05-10 | 
Country Status (9)
| Country | Link | 
|---|---|
| US (1) | US3955154A (en:Method) | 
| JP (1) | JPS5718710B2 (en:Method) | 
| AT (1) | AT374975B (en:Method) | 
| CA (1) | CA1029821A (en:Method) | 
| DE (1) | DE2520825C2 (en:Method) | 
| ES (1) | ES437556A1 (en:Method) | 
| FR (1) | FR2270712B1 (en:Method) | 
| GB (1) | GB1505376A (en:Method) | 
| NL (1) | NL7505426A (en:Method) | 
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS5718710B2 (en:Method) * | 1974-05-10 | 1982-04-17 | ||
| US4150344A (en) * | 1976-03-01 | 1979-04-17 | Siemens Aktiengesellschaft | Tunable microwave oscillator | 
| DE2709314C3 (de) * | 1977-03-03 | 1980-03-20 | Texas Instruments Deutschland Gmbh, 8050 Freising | HF-Verstärkerschaltung | 
| US7141865B2 (en) * | 2001-05-21 | 2006-11-28 | James Rodger Leitch | Low noise semiconductor amplifier | 
| JP2008142832A (ja) * | 2006-12-11 | 2008-06-26 | Aisho:Kk | パイプ切断機 | 
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| BE547227A (en:Method) * | 1955-04-21 | |||
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure | 
| US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same | 
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing | 
| BE756139A (fr) * | 1969-09-15 | 1971-02-15 | Rca Corp | Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee | 
| JPS4831516B1 (en:Method) * | 1969-10-17 | 1973-09-29 | ||
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung | 
| US3822409A (en) * | 1971-06-01 | 1974-07-02 | Matsushita Electric Works Ltd | Photosensitive solid oscillator | 
| JPS5123432B2 (en:Method) * | 1971-08-26 | 1976-07-16 | ||
| JPS493583A (en:Method) * | 1972-04-20 | 1974-01-12 | ||
| JPS5147584B2 (en:Method) * | 1972-12-29 | 1976-12-15 | ||
| JPS5147583B2 (en:Method) * | 1972-12-29 | 1976-12-15 | ||
| JPS49131388A (en:Method) * | 1973-04-18 | 1974-12-17 | ||
| JPS5718710B2 (en:Method) * | 1974-05-10 | 1982-04-17 | 
- 
        1974
        
- 1974-05-10 JP JP5211974A patent/JPS5718710B2/ja not_active Expired
 
 - 
        1975
        
- 1975-04-25 US US05/571,708 patent/US3955154A/en not_active Expired - Lifetime
 - 1975-04-25 CA CA225,488A patent/CA1029821A/en not_active Expired
 - 1975-05-02 GB GB18509/75A patent/GB1505376A/en not_active Expired
 - 1975-05-07 FR FR7514457A patent/FR2270712B1/fr not_active Expired
 - 1975-05-07 NL NL7505426A patent/NL7505426A/xx not_active Application Discontinuation
 - 1975-05-09 DE DE2520825A patent/DE2520825C2/de not_active Expired
 - 1975-05-09 ES ES437556A patent/ES437556A1/es not_active Expired
 - 1975-05-12 AT AT0358975A patent/AT374975B/de not_active IP Right Cessation
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| CA1029821A (en) | 1978-04-18 | 
| JPS50145087A (en:Method) | 1975-11-21 | 
| ATA358975A (de) | 1983-10-15 | 
| FR2270712A1 (en:Method) | 1975-12-05 | 
| FR2270712B1 (en:Method) | 1980-10-17 | 
| GB1505376A (en) | 1978-03-30 | 
| US3955154A (en) | 1976-05-04 | 
| DE2520825C2 (de) | 1982-07-08 | 
| DE2520825A1 (de) | 1975-11-20 | 
| NL7505426A (nl) | 1975-11-12 | 
| AU8065275A (en) | 1976-11-04 | 
| ES437556A1 (es) | 1977-01-16 | 
| AT374975B (de) | 1984-06-25 |