FR2267641B1 - - Google Patents

Info

Publication number
FR2267641B1
FR2267641B1 FR7511240A FR7511240A FR2267641B1 FR 2267641 B1 FR2267641 B1 FR 2267641B1 FR 7511240 A FR7511240 A FR 7511240A FR 7511240 A FR7511240 A FR 7511240A FR 2267641 B1 FR2267641 B1 FR 2267641B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7511240A
Other versions
FR2267641A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4146474A external-priority patent/JPS555268B2/ja
Priority claimed from JP5212174A external-priority patent/JPS50145089A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2267641A1 publication Critical patent/FR2267641A1/fr
Application granted granted Critical
Publication of FR2267641B1 publication Critical patent/FR2267641B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7511240A 1974-04-10 1975-04-10 Expired FR2267641B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4146474A JPS555268B2 (fr) 1974-04-10 1974-04-10
JP5212174A JPS50145089A (fr) 1974-05-10 1974-05-10

Publications (2)

Publication Number Publication Date
FR2267641A1 FR2267641A1 (fr) 1975-11-07
FR2267641B1 true FR2267641B1 (fr) 1978-09-01

Family

ID=26381084

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7511240A Expired FR2267641B1 (fr) 1974-04-10 1975-04-10

Country Status (7)

Country Link
US (1) US4000506A (fr)
CA (1) CA1026468A (fr)
DE (1) DE2515577C2 (fr)
FR (1) FR2267641B1 (fr)
GB (1) GB1502165A (fr)
IT (1) IT1037228B (fr)
NL (1) NL7504306A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4910562A (en) * 1982-04-26 1990-03-20 International Business Machines Corporation Field induced base transistor
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
GB2132016B (en) * 1982-12-07 1986-06-25 Kokusai Denshin Denwa Co Ltd A semiconductor device
EP0166923A3 (fr) * 1984-06-29 1987-09-30 International Business Machines Corporation Transistor bipolaire de haute performance à anneau de garde à dopage léger disposé entre l'émetteur et la région de base extrinsèque
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US4905070A (en) * 1988-09-02 1990-02-27 Motorola, Inc. Semiconductor device exhibiting no degradation of low current gain
EP0974165B1 (fr) * 1998-02-09 2009-03-25 Nxp B.V. Dispositif semi-conducteur a transistor bipolaire, et procede de fabrication associe
DE10206133C1 (de) * 2002-02-14 2003-09-25 Infineon Technologies Ag Vertikaler Bipolartransistor mit innewohnendem Junction-Feldeffekttransistor (J-FET)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (fr) * 1959-02-12
NL103476C (fr) * 1955-04-21
NL242787A (fr) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices

Also Published As

Publication number Publication date
CA1026468A (fr) 1978-02-14
DE2515577C2 (de) 1986-01-02
NL7504306A (nl) 1975-10-14
IT1037228B (it) 1979-11-10
FR2267641A1 (fr) 1975-11-07
DE2515577A1 (de) 1975-10-23
US4000506A (en) 1976-12-28
GB1502165A (en) 1978-02-22

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