NL7408502A - Geheugenmatrix. - Google Patents

Geheugenmatrix.

Info

Publication number
NL7408502A
NL7408502A NL7408502A NL7408502A NL7408502A NL 7408502 A NL7408502 A NL 7408502A NL 7408502 A NL7408502 A NL 7408502A NL 7408502 A NL7408502 A NL 7408502A NL 7408502 A NL7408502 A NL 7408502A
Authority
NL
Netherlands
Prior art keywords
memory matrix
matrix
memory
Prior art date
Application number
NL7408502A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7309453A external-priority patent/NL7309453A/xx
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7408502A priority Critical patent/NL7408502A/xx
Priority to IT69116/74A priority patent/IT1014450B/it
Priority to SE7408741A priority patent/SE399605B/xx
Priority to CH911974A priority patent/CH585948A5/xx
Priority to GB29480/74A priority patent/GB1480138A/en
Priority to DE2432099A priority patent/DE2432099B2/de
Priority to JP7723474A priority patent/JPS5516354B2/ja
Priority to AT558374A priority patent/AT344424B/de
Priority to FR7423639A priority patent/FR2236248B1/fr
Publication of NL7408502A publication Critical patent/NL7408502A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the primary-secondary type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
NL7408502A 1973-07-06 1974-06-25 Geheugenmatrix. NL7408502A (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL7408502A NL7408502A (nl) 1973-07-06 1974-06-25 Geheugenmatrix.
IT69116/74A IT1014450B (it) 1973-07-06 1974-07-03 Matrice di memoria
SE7408741A SE399605B (sv) 1973-07-06 1974-07-03 Minnesanordning
CH911974A CH585948A5 (OSRAM) 1973-07-06 1974-07-03
GB29480/74A GB1480138A (en) 1973-07-06 1974-07-03 Transistor memory array
DE2432099A DE2432099B2 (de) 1973-07-06 1974-07-04 Speichermatrix
JP7723474A JPS5516354B2 (OSRAM) 1973-07-06 1974-07-05
AT558374A AT344424B (de) 1973-07-06 1974-07-05 Speichermatrix
FR7423639A FR2236248B1 (OSRAM) 1973-07-06 1974-07-08

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7309453A NL7309453A (nl) 1973-07-06 1973-07-06 Geheugenmatrix.
NL7408502A NL7408502A (nl) 1973-07-06 1974-06-25 Geheugenmatrix.

Publications (1)

Publication Number Publication Date
NL7408502A true NL7408502A (nl) 1975-12-30

Family

ID=26644895

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7408502A NL7408502A (nl) 1973-07-06 1974-06-25 Geheugenmatrix.

Country Status (9)

Country Link
JP (1) JPS5516354B2 (OSRAM)
AT (1) AT344424B (OSRAM)
CH (1) CH585948A5 (OSRAM)
DE (1) DE2432099B2 (OSRAM)
FR (1) FR2236248B1 (OSRAM)
GB (1) GB1480138A (OSRAM)
IT (1) IT1014450B (OSRAM)
NL (1) NL7408502A (OSRAM)
SE (1) SE399605B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
US4366554A (en) * 1978-10-03 1982-12-28 Tokyo Shibaura Denki Kabushiki Kaisha I2 L Memory device
EP0065999B1 (de) * 1981-05-30 1986-05-07 Ibm Deutschland Gmbh Hochintegrierter schneller Speicher mit bipolaren Transistoren
EP0166043B1 (en) * 1984-06-25 1990-09-19 International Business Machines Corporation Mtl storage cell with inherent output multiplex capability

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory

Also Published As

Publication number Publication date
DE2432099B2 (de) 1978-05-24
CH585948A5 (OSRAM) 1977-03-15
JPS5516354B2 (OSRAM) 1980-05-01
FR2236248B1 (OSRAM) 1977-10-07
DE2432099A1 (de) 1975-02-20
SE399605B (sv) 1978-02-20
JPS5050832A (OSRAM) 1975-05-07
GB1480138A (en) 1977-07-20
ATA558374A (de) 1977-11-15
AT344424B (de) 1978-07-25
IT1014450B (it) 1977-04-20
DE2432099C3 (OSRAM) 1979-02-08
FR2236248A1 (OSRAM) 1975-01-31
SE7408741L (OSRAM) 1975-01-07

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