NL7305642A - - Google Patents

Info

Publication number
NL7305642A
NL7305642A NL7305642A NL7305642A NL7305642A NL 7305642 A NL7305642 A NL 7305642A NL 7305642 A NL7305642 A NL 7305642A NL 7305642 A NL7305642 A NL 7305642A NL 7305642 A NL7305642 A NL 7305642A
Authority
NL
Netherlands
Application number
NL7305642A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7305642A publication Critical patent/NL7305642A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107Buried supplementary regions, e.g. buried guard rings 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
NL7305642A 1972-04-20 1973-04-19 NL7305642A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (https=) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
NL7305642A true NL7305642A (https=) 1973-10-23

Family

ID=12561864

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7305642A NL7305642A (https=) 1972-04-20 1973-04-19

Country Status (7)

Country Link
JP (1) JPS5320194B2 (https=)
CA (1) CA985794A (https=)
DE (1) DE2320579C3 (https=)
FR (1) FR2181075B1 (https=)
GB (1) GB1427014A (https=)
IT (1) IT1049525B (https=)
NL (1) NL7305642A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (https=) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
DE3832709A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Thyristor
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
GB2237930A (en) * 1989-11-01 1991-05-15 Philips Electronic Associated A semiconductor device and method of manufacturing a semiconductor device
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
GB2403850B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen

Also Published As

Publication number Publication date
JPS493580A (https=) 1974-01-12
JPS5320194B2 (https=) 1978-06-24
DE2320579C3 (de) 1983-11-10
DE2320579A1 (de) 1973-11-08
GB1427014A (en) 1976-03-03
FR2181075A1 (https=) 1973-11-30
IT1049525B (it) 1981-02-10
DE2320579B2 (de) 1976-10-28
CA985794A (en) 1976-03-16
FR2181075B1 (https=) 1977-12-30

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed