NL7106064A - - Google Patents

Info

Publication number
NL7106064A
NL7106064A NL7106064A NL7106064A NL7106064A NL 7106064 A NL7106064 A NL 7106064A NL 7106064 A NL7106064 A NL 7106064A NL 7106064 A NL7106064 A NL 7106064A NL 7106064 A NL7106064 A NL 7106064A
Authority
NL
Netherlands
Application number
NL7106064A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7106064A publication Critical patent/NL7106064A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
NL7106064A 1970-05-05 1971-05-04 NL7106064A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3482070A 1970-05-05 1970-05-05

Publications (1)

Publication Number Publication Date
NL7106064A true NL7106064A (en:Method) 1971-11-09

Family

ID=21878818

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7106064A NL7106064A (en:Method) 1970-05-05 1971-05-04

Country Status (12)

Country Link
US (1) US3727116A (en:Method)
JP (1) JPS5438475B1 (en:Method)
BE (1) BE766708A (en:Method)
DE (1) DE2121086C3 (en:Method)
ES (1) ES390673A1 (en:Method)
FR (1) FR2088344B1 (en:Method)
GB (1) GB1330911A (en:Method)
MY (1) MY7400235A (en:Method)
NL (1) NL7106064A (en:Method)
SE (1) SE369125B (en:Method)
YU (1) YU36317B (en:Method)
ZA (1) ZA712839B (en:Method)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US4009059A (en) * 1972-01-08 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Reverse conducting thyristor and process for producing the same
JPS4918279A (en:Method) * 1972-06-08 1974-02-18
JPS5342234B2 (en:Method) * 1973-02-12 1978-11-09
US3988768A (en) * 1973-10-30 1976-10-26 General Electric Company Deep diode silicon controlled rectifier
FR2270676B1 (en:Method) * 1974-02-22 1976-12-03 Thomson Csf
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US4031607A (en) * 1974-05-28 1977-06-28 General Electric Company Minority carrier isolation barriers for semiconductor devices
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
US4053924A (en) * 1975-02-07 1977-10-11 California Linear Circuits, Inc. Ion-implanted semiconductor abrupt junction
US4032364A (en) * 1975-02-28 1977-06-28 General Electric Company Deep diode silicon controlled rectifier
US4035670A (en) * 1975-12-24 1977-07-12 California Linear Circuits, Inc. Transistor stored charge control using a recombination layer diode
CH594989A5 (en:Method) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4117505A (en) * 1976-11-19 1978-09-26 Mitsubishi Denki Kabushiki Kaisha Thyristor with heat sensitive switching characteristics
DE2805813C3 (de) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
FR2524715A1 (fr) * 1982-03-30 1983-10-07 Thomson Csf Diode rapide
WO2004105089A2 (en) * 2003-05-15 2004-12-02 Pan Jit Americas, Inc. Low capacitance over-voltage protection thyristor device
US9385196B2 (en) 2012-09-12 2016-07-05 Texas Instruments Incorporated Fast switching IGBT with embedded emitter shorting contacts and method for making same
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
US3261985A (en) * 1962-12-21 1966-07-19 Gen Electric Cross-current turn-off silicon controlled rectifier
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
FR1483998A (en:Method) * 1965-05-14 1967-09-13
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
US3584270A (en) * 1968-03-13 1971-06-08 Westinghouse Electric Corp High speed switching rectifier
GB1214180A (en) * 1968-08-30 1970-12-02 Westinghouse Brake & Signal Semiconductor devices

Also Published As

Publication number Publication date
YU107971A (en) 1981-08-31
ZA712839B (en) 1972-01-26
JPS5438475B1 (en:Method) 1979-11-21
US3727116A (en) 1973-04-10
YU36317B (en) 1982-06-18
GB1330911A (en) 1973-09-19
DE2121086C3 (de) 1985-02-21
DE2121086A1 (de) 1971-11-18
SE369125B (en:Method) 1974-08-05
MY7400235A (en) 1974-12-31
FR2088344A1 (en:Method) 1972-01-07
BE766708A (fr) 1971-10-01
FR2088344B1 (en:Method) 1976-12-03
DE2121086B2 (en:Method) 1979-03-22
ES390673A1 (es) 1974-09-16

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Legal Events

Date Code Title Description
BV The patent application has lapsed