NL7017167A - - Google Patents
Info
- Publication number
- NL7017167A NL7017167A NL7017167A NL7017167A NL7017167A NL 7017167 A NL7017167 A NL 7017167A NL 7017167 A NL7017167 A NL 7017167A NL 7017167 A NL7017167 A NL 7017167A NL 7017167 A NL7017167 A NL 7017167A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S206/00—Special receptacle or package
- Y10S206/832—Semiconductor wafer boat
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1317—Multilayer [continuous layer]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691959392 DE1959392C3 (de) | 1969-11-26 | Verwendung von mit inerten Stoffen geschützten Quarzampullen für die Herstellung und/oder Weiterverarbeitung von siliciumarmen 1I I-V-Halbleiterkörpern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7017167A true NL7017167A (enExample) | 1971-05-28 |
Family
ID=5752154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7017167A NL7017167A (enExample) | 1969-11-26 | 1970-11-24 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3734817A (enExample) |
| JP (1) | JPS4942419B1 (enExample) |
| BE (1) | BE759405A (enExample) |
| CA (1) | CA932246A (enExample) |
| FR (1) | FR2082986A5 (enExample) |
| GB (1) | GB1338243A (enExample) |
| NL (1) | NL7017167A (enExample) |
| SE (1) | SE372427B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3890530A (en) * | 1973-01-22 | 1975-06-17 | Gen Electric | Precoat for fluorescent lamp |
| JPS5231995U (enExample) * | 1975-08-27 | 1977-03-05 | ||
| US4522849A (en) * | 1981-07-10 | 1985-06-11 | General Electric Company | Method for coating quartz with boron nitride |
| GB2183501A (en) * | 1985-11-15 | 1987-06-10 | Kollmorgen Tech Corp | Horizontal bridgman crystal growth |
| GB2188854A (en) * | 1986-04-09 | 1987-10-14 | Philips Electronic Associated | Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method |
| EP0671490B1 (en) * | 1994-03-11 | 1998-12-16 | Sumitomo Electric Industries, Ltd. | Method of and crucible for preparing compound semiconductor crystal |
| DE69609568T2 (de) * | 1995-05-26 | 2001-02-01 | Sumitomo Electric Industries, Ltd. | Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall |
| JP2003124235A (ja) * | 2001-10-17 | 2003-04-25 | Sumitomo Electric Ind Ltd | Ｉｉ−ｖｉ族化合物半導体、その熱処理方法およびその熱処理装置 |
| CN115537921A (zh) * | 2022-10-24 | 2022-12-30 | 广东先导微电子科技有限公司 | 一种磷化铟的合成方法 |
-
0
- BE BE759405D patent/BE759405A/xx unknown
-
1970
- 1970-11-23 US US00092318A patent/US3734817A/en not_active Expired - Lifetime
- 1970-11-23 GB GB5556570A patent/GB1338243A/en not_active Expired
- 1970-11-23 CA CA098868A patent/CA932246A/en not_active Expired
- 1970-11-24 NL NL7017167A patent/NL7017167A/xx unknown
- 1970-11-25 FR FR7042308A patent/FR2082986A5/fr not_active Expired
- 1970-11-26 JP JP45104420A patent/JPS4942419B1/ja active Pending
- 1970-11-26 SE SE7016055A patent/SE372427B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4942419B1 (enExample) | 1974-11-14 |
| GB1338243A (en) | 1973-11-21 |
| SE372427B (enExample) | 1974-12-23 |
| FR2082986A5 (enExample) | 1971-12-10 |
| DE1959392B2 (de) | 1973-09-13 |
| CA932246A (en) | 1973-08-21 |
| DE1959392A1 (de) | 1971-06-03 |
| US3734817A (en) | 1973-05-22 |
| BE759405A (fr) | 1971-05-25 |