JPS4942419B1 - - Google Patents

Info

Publication number
JPS4942419B1
JPS4942419B1 JP45104420A JP10442070A JPS4942419B1 JP S4942419 B1 JPS4942419 B1 JP S4942419B1 JP 45104420 A JP45104420 A JP 45104420A JP 10442070 A JP10442070 A JP 10442070A JP S4942419 B1 JPS4942419 B1 JP S4942419B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45104420A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691959392 external-priority patent/DE1959392C3/de
Application filed filed Critical
Publication of JPS4942419B1 publication Critical patent/JPS4942419B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S206/00—Special receptacle or package
    • Y10S206/832—Semiconductor wafer boat
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y10T428/1317—Multilayer [continuous layer]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP45104420A 1969-11-26 1970-11-26 Pending JPS4942419B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691959392 DE1959392C3 (de) 1969-11-26 Verwendung von mit inerten Stoffen geschützten Quarzampullen für die Herstellung und/oder Weiterverarbeitung von siliciumarmen 1I I-V-Halbleiterkörpern

Publications (1)

Publication Number Publication Date
JPS4942419B1 true JPS4942419B1 (ja) 1974-11-14

Family

ID=5752154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45104420A Pending JPS4942419B1 (ja) 1969-11-26 1970-11-26

Country Status (8)

Country Link
US (1) US3734817A (ja)
JP (1) JPS4942419B1 (ja)
BE (1) BE759405A (ja)
CA (1) CA932246A (ja)
FR (1) FR2082986A5 (ja)
GB (1) GB1338243A (ja)
NL (1) NL7017167A (ja)
SE (1) SE372427B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231995U (ja) * 1975-08-27 1977-03-05

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890530A (en) * 1973-01-22 1975-06-17 Gen Electric Precoat for fluorescent lamp
US4522849A (en) * 1981-07-10 1985-06-11 General Electric Company Method for coating quartz with boron nitride
GB2183501A (en) * 1985-11-15 1987-06-10 Kollmorgen Tech Corp Horizontal bridgman crystal growth
GB2188854A (en) * 1986-04-09 1987-10-14 Philips Electronic Associated Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method
DE69506600T2 (de) * 1994-03-11 1999-05-06 Sumitomo Electric Industries Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles
EP0744476B1 (en) * 1995-05-26 2000-08-02 Sumitomo Electric Industries, Ltd. Method of preparing group II-VI or III-V compound single crystal
JP2003124235A (ja) * 2001-10-17 2003-04-25 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体、その熱処理方法およびその熱処理装置
CN115537921A (zh) * 2022-10-24 2022-12-30 广东先导微电子科技有限公司 一种磷化铟的合成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231995U (ja) * 1975-08-27 1977-03-05

Also Published As

Publication number Publication date
FR2082986A5 (ja) 1971-12-10
NL7017167A (ja) 1971-05-28
BE759405A (fr) 1971-05-25
DE1959392B2 (de) 1973-09-13
US3734817A (en) 1973-05-22
CA932246A (en) 1973-08-21
DE1959392A1 (de) 1971-06-03
GB1338243A (en) 1973-11-21
SE372427B (ja) 1974-12-23

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