NL7014851A - - Google Patents

Info

Publication number
NL7014851A
NL7014851A NL7014851A NL7014851A NL7014851A NL 7014851 A NL7014851 A NL 7014851A NL 7014851 A NL7014851 A NL 7014851A NL 7014851 A NL7014851 A NL 7014851A NL 7014851 A NL7014851 A NL 7014851A
Authority
NL
Netherlands
Application number
NL7014851A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7014851A publication Critical patent/NL7014851A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2865Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
NL7014851A 1969-12-05 1970-10-09 NL7014851A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88262369A 1969-12-05 1969-12-05

Publications (1)

Publication Number Publication Date
NL7014851A true NL7014851A (xx) 1971-06-08

Family

ID=25380989

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7014851A NL7014851A (xx) 1969-12-05 1970-10-09

Country Status (3)

Country Link
US (1) US3618052A (xx)
DE (1) DE2059598C2 (xx)
NL (1) NL7014851A (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729721A (en) * 1970-09-23 1973-04-24 Siemens Ag Circuit arrangement for reading and writing in a bipolar semiconductor memory
DE2165729C3 (de) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung
US3764825A (en) * 1972-01-10 1973-10-09 R Stewart Active element memory
US3755793A (en) * 1972-04-13 1973-08-28 Ibm Latent image memory with single-device cells of two types
US3781828A (en) * 1972-05-04 1973-12-25 Ibm Three-dimensionally addressed memory
US3757313A (en) * 1972-06-29 1973-09-04 Ibm Data storage with predetermined settable configuration
JPS5051231A (xx) * 1973-09-07 1975-05-08
US4025909A (en) * 1975-09-08 1977-05-24 Ibm Corporation Simplified dynamic associative cell
US4144587A (en) * 1976-07-22 1979-03-13 Tokyo Shibaura Electric Co., Ltd. Counting level "1" bits to minimize ROM active elements
US4439842A (en) * 1979-12-28 1984-03-27 International Business Machines Corp. Bipolar transistor read only or read-write store with low impedance sense amplifier
JPS594787B2 (ja) * 1979-12-28 1984-01-31 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 低インピ−ダンス感知増幅器を有し読取専用メモリ及び読取一書込メモリに共用可能なメモリ装置
DE3143677C2 (de) * 1981-11-04 1986-03-20 Brown, Boveri & Cie Ag, 6800 Mannheim Speicherschaltung für eine Kontaktstellung
US4613958A (en) * 1984-06-28 1986-09-23 International Business Machines Corporation Gate array chip
US4805142A (en) * 1986-07-01 1989-02-14 International Business Machines Corporation Multiple ROM data state, read/write memory cell
JPS63160097A (ja) * 1986-12-24 1988-07-02 Toshiba Corp 半導体不揮発性メモリ
US4858184A (en) * 1987-04-27 1989-08-15 Hitachi, Ltd. Radiation resistant bipolar memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041477A (en) * 1958-08-08 1962-06-26 Budts Lucien Multivibrator circuit arrangement
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3427598A (en) * 1965-12-09 1969-02-11 Fairchild Camera Instr Co Emitter gated memory cell
US3529299A (en) * 1966-10-21 1970-09-15 Texas Instruments Inc Programmable high-speed read-only memory devices
GB1162109A (en) * 1966-12-22 1969-08-20 Ibm Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices

Also Published As

Publication number Publication date
US3618052A (en) 1971-11-02
DE2059598A1 (de) 1971-06-09
DE2059598C2 (de) 1983-12-01

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