NL7008101A - - Google Patents
Info
- Publication number
- NL7008101A NL7008101A NL7008101A NL7008101A NL7008101A NL 7008101 A NL7008101 A NL 7008101A NL 7008101 A NL7008101 A NL 7008101A NL 7008101 A NL7008101 A NL 7008101A NL 7008101 A NL7008101 A NL 7008101A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/105—Masks, metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7008101.A NL164424C (nl) | 1970-06-04 | 1970-06-04 | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
DE2125303A DE2125303C3 (de) | 1970-06-04 | 1971-05-21 | Verfahren zum Herstellen einer Halbleiteranordnung |
US00148416A US3752711A (en) | 1970-06-04 | 1971-06-01 | Method of manufacturing an igfet and the product thereof |
CH797371A CH524251A (de) | 1970-06-04 | 1971-06-01 | Verfahren zur Herstellung einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung |
GB1826571*[A GB1348391A (en) | 1970-06-04 | 1971-06-01 | Methods of manufacturing semiconductor devices |
SE07042/71A SE361557B (fr) | 1970-06-04 | 1971-06-01 | |
JP46037574A JPS507425B1 (fr) | 1970-06-04 | 1971-06-01 | |
AT470171A AT324428B (de) | 1970-06-04 | 1971-06-01 | Verfahren zur herstellung einer halbleiteranordnung mit wenigstens einem feldeffekttransistor mit isolierter torelektrode |
ES391843A ES391843A1 (es) | 1970-06-04 | 1971-06-02 | Un metodo para fabricar un dispositivo semiconductor. |
FR7119976A FR2094036B1 (fr) | 1970-06-04 | 1971-06-02 | |
CA114645A CA920284A (en) | 1970-06-04 | 1971-06-02 | Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method |
BE768076A BE768076A (fr) | 1970-06-04 | 1971-06-03 | Procede de fabrication d'un dispositif semiconducteur et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7008101.A NL164424C (nl) | 1970-06-04 | 1970-06-04 | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7008101A true NL7008101A (fr) | 1971-12-07 |
NL164424B NL164424B (nl) | 1980-07-15 |
NL164424C NL164424C (nl) | 1980-12-15 |
Family
ID=19810238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7008101.A NL164424C (nl) | 1970-06-04 | 1970-06-04 | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
Country Status (12)
Country | Link |
---|---|
US (1) | US3752711A (fr) |
JP (1) | JPS507425B1 (fr) |
AT (1) | AT324428B (fr) |
BE (1) | BE768076A (fr) |
CA (1) | CA920284A (fr) |
CH (1) | CH524251A (fr) |
DE (1) | DE2125303C3 (fr) |
ES (1) | ES391843A1 (fr) |
FR (1) | FR2094036B1 (fr) |
GB (1) | GB1348391A (fr) |
NL (1) | NL164424C (fr) |
SE (1) | SE361557B (fr) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849918B1 (en) | 1965-09-28 | 2005-02-01 | Chou H. Li | Miniaturized dielectrically isolated solid state device |
US6979877B1 (en) | 1965-09-28 | 2005-12-27 | Li Chou H | Solid-state device |
US7038290B1 (en) | 1965-09-28 | 2006-05-02 | Li Chou H | Integrated circuit device |
US3921283A (en) * | 1971-06-08 | 1975-11-25 | Philips Corp | Semiconductor device and method of manufacturing the device |
US4011653A (en) * | 1971-08-23 | 1977-03-15 | Tokyo Shibaura Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor |
US3892609A (en) * | 1971-10-07 | 1975-07-01 | Hughes Aircraft Co | Production of mis integrated devices with high inversion voltage to threshold voltage ratios |
NL161305C (nl) * | 1971-11-20 | 1980-01-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderin- richting. |
DE2251823A1 (de) * | 1972-10-21 | 1974-05-02 | Itt Ind Gmbh Deutsche | Halbleiterelement und herstellungsverfahren |
US3853633A (en) * | 1972-12-04 | 1974-12-10 | Motorola Inc | Method of making a semi planar insulated gate field-effect transistor device with implanted field |
CA1001771A (en) * | 1973-01-15 | 1976-12-14 | Fairchild Camera And Instrument Corporation | Method of mos transistor manufacture and resulting structure |
US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
JPS5214594B2 (fr) * | 1973-10-17 | 1977-04-22 | ||
US3890632A (en) * | 1973-12-03 | 1975-06-17 | Rca Corp | Stabilized semiconductor devices and method of making same |
JPS5624371B2 (fr) * | 1974-02-13 | 1981-06-05 | ||
US3979765A (en) * | 1974-03-07 | 1976-09-07 | Signetics Corporation | Silicon gate MOS device and method |
US3899363A (en) * | 1974-06-28 | 1975-08-12 | Ibm | Method and device for reducing sidewall conduction in recessed oxide pet arrays |
JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
US4047285A (en) * | 1975-05-08 | 1977-09-13 | National Semiconductor Corporation | Self-aligned CMOS for bulk silicon and insulating substrate device |
US3997379A (en) * | 1975-06-20 | 1976-12-14 | Rca Corporation | Diffusion of conductivity modifiers into a semiconductor body |
US3978577A (en) * | 1975-06-30 | 1976-09-07 | International Business Machines Corporation | Fixed and variable threshold N-channel MNOSFET integration technique |
JPS5232680A (en) * | 1975-09-08 | 1977-03-12 | Toko Inc | Manufacturing process of insulation gate-type field-effect semiconduct or device |
US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
FR2351502A1 (fr) * | 1976-05-14 | 1977-12-09 | Ibm | Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees |
US4246692A (en) * | 1976-05-28 | 1981-01-27 | Texas Instruments Incorporated | MOS Integrated circuits with implanted resistor elements |
US4087902A (en) * | 1976-06-23 | 1978-05-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Field effect transistor and method of construction thereof |
US4114255A (en) * | 1976-08-16 | 1978-09-19 | Intel Corporation | Floating gate storage device and method of fabrication |
US4135289A (en) * | 1977-08-23 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Method for producing a buried junction memory device |
US4268847A (en) * | 1977-09-16 | 1981-05-19 | Nippon Electric Co., Ltd. | Semiconductor device having an insulated gate type field effect transistor and method for producing the same |
US4144101A (en) * | 1978-06-05 | 1979-03-13 | International Business Machines Corporation | Process for providing self-aligned doping regions by ion-implantation and lift-off |
US4182636A (en) * | 1978-06-30 | 1980-01-08 | International Business Machines Corporation | Method of fabricating self-aligned contact vias |
US4219925A (en) * | 1978-09-01 | 1980-09-02 | Teletype Corporation | Method of manufacturing a device in a silicon wafer |
US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
US4288910A (en) * | 1979-04-16 | 1981-09-15 | Teletype Corporation | Method of manufacturing a semiconductor device |
US4490736A (en) * | 1979-04-23 | 1984-12-25 | Texas Instruments Incorporated | Semiconductor device and method of making |
NL7903158A (nl) * | 1979-04-23 | 1980-10-27 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
FR2462781A1 (fr) * | 1979-07-27 | 1981-02-13 | Thomson Csf | Transistor a effet de champ a grille schottky autoalignee et son procede de fabrication |
US4441941A (en) * | 1980-03-06 | 1984-04-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device employing element isolation using insulating materials |
US4335502A (en) * | 1980-10-01 | 1982-06-22 | Standard Microsystems Corporation | Method for manufacturing metal-oxide silicon devices |
JPS59132136A (ja) * | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
US4551910A (en) * | 1984-11-27 | 1985-11-12 | Intel Corporation | MOS Isolation processing |
ATE45248T1 (de) * | 1984-12-13 | 1989-08-15 | Siemens Ag | Verfahren zum herstellen einer die aktiven bereiche einer hochintegrierten cmos-schaltung trennenden isolation. |
US5026656A (en) * | 1988-02-01 | 1991-06-25 | Texas Instruments Incorporated | MOS transistor with improved radiation hardness |
US5019526A (en) * | 1988-09-26 | 1991-05-28 | Nippondenso Co., Ltd. | Method of manufacturing a semiconductor device having a plurality of elements |
US4968641A (en) * | 1989-06-22 | 1990-11-06 | Alexander Kalnitsky | Method for formation of an isolating oxide layer |
JPH0555566A (ja) * | 1991-08-28 | 1993-03-05 | Nec Corp | 半導体装置 |
US20040144999A1 (en) * | 1995-06-07 | 2004-07-29 | Li Chou H. | Integrated circuit device |
KR100197656B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 에스.오.아이.소자의 제조방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI5A (fi) * | 1844-02-28 | Nytt slags spelkort | ||
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
-
1970
- 1970-06-04 NL NL7008101.A patent/NL164424C/xx not_active IP Right Cessation
-
1971
- 1971-05-21 DE DE2125303A patent/DE2125303C3/de not_active Expired
- 1971-06-01 US US00148416A patent/US3752711A/en not_active Expired - Lifetime
- 1971-06-01 JP JP46037574A patent/JPS507425B1/ja active Pending
- 1971-06-01 SE SE07042/71A patent/SE361557B/xx unknown
- 1971-06-01 GB GB1826571*[A patent/GB1348391A/en not_active Expired
- 1971-06-01 CH CH797371A patent/CH524251A/de not_active IP Right Cessation
- 1971-06-01 AT AT470171A patent/AT324428B/de not_active IP Right Cessation
- 1971-06-02 FR FR7119976A patent/FR2094036B1/fr not_active Expired
- 1971-06-02 ES ES391843A patent/ES391843A1/es not_active Expired
- 1971-06-02 CA CA114645A patent/CA920284A/en not_active Expired
- 1971-06-03 BE BE768076A patent/BE768076A/fr not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS507425B1 (fr) | 1975-03-25 |
US3752711A (en) | 1973-08-14 |
SE361557B (fr) | 1973-11-05 |
NL164424C (nl) | 1980-12-15 |
NL164424B (nl) | 1980-07-15 |
DE2125303A1 (de) | 1971-12-16 |
CA920284A (en) | 1973-01-30 |
FR2094036B1 (fr) | 1974-10-11 |
AT324428B (de) | 1975-08-25 |
BE768076A (fr) | 1971-12-03 |
DE2125303B2 (de) | 1978-07-20 |
CH524251A (de) | 1972-06-15 |
FR2094036A1 (fr) | 1972-02-04 |
DE2125303C3 (de) | 1979-04-05 |
ES391843A1 (es) | 1973-07-01 |
GB1348391A (en) | 1974-03-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
V4 | Discontinued because of reaching the maximum lifetime of a patent |